MNT
MicroNova Technology
914 Harpeth Valley Place Nashville, TN 37221
Tel: 615.662.1200 Fax: 615.662.1226
www.micronovatech.com
PRODUCT DATA
LDT5210
and
LDT5210T
Micro-LID NPN Transistors
For Information & Sales Contact
MicroNova Technology
tlh@micronovatech.com
or
sales@micronovatech.com
MicroNova Technology
Product Data
November 2002
Micro-LID Transistors
LDT5210 and LDT5210T
Description:
The LDT5210 (untinned) and LDT5210T (tinned) are NPN silicon transistors in
very small, rugged, surface mount, 4-post ceramic packages (MNT package p/n
029-017). The LDT5210 and LDT5210T meet the general specifications of the
2N5210 transistor. The 029-017 Micro-LID package is a 4-post, leadless ceramic
carrier which can be provided with gold metallized or pre-tinned lands, and is
approved for military, medical implant, sensor, and high reliability applications.
The LDT5210 and LDT5210T can be provided with special feature options such
as additional temperature cycling and screening.
Maximum Ratings:
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Dissipation
Operating Junction Temperature
Storage Temperature
Operating Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
Pt
Tj
Tstg
Toper
Rating
50 V
50 V
5V
100 mA
350 mW
150°C
-65°C to 150°C
-55°C to 125°C
Data Sheet LDT5210 / LDT5210T
Rev. B
Page 2 of 4
MicroNova Technology
Product Data
November 2002
Micro-LID Transistors
LDT5210 and LDT5210T
______________________________________________________________________________________
Outline / Schematic:
TOP VIEW
3
.040
2
3, 4
2
1
4
1
.075
SIDE VIEW
END VIEW
.035
SUBSTRATE / CIRCUIT BOARD
Dimensions / Marking:
Length
Width
Height
.075′′ + .003′′
.040′′ + .003′′
.035′′ + .003′′
Post 1 (Emitter)
Post 2 (Base)
Post 3, 4 (Collector)
.015′′ x .010′′ typ
.015′′ x .010′′ typ
.015′′ x .012′′ typ
Marking on back of package: Blue Dot over Emitter and Red Dot in Center
(post down configuration)
Standard In-Process Screening Requirements:
Semiconductor die and Micro-LID package visual inspection
Wire pull test
24 hour stabilization bake at 150°C
10 temperature cycles from –55°C to 125°C
100% electrical test of dc characteristics at 25°C
Final visual inspection
________________________________________________________________
Data Sheet LDT5210 / LDT5210T
Rev. B
Page 3 of 4
MicroNova Technology
Product Data
November 2002
Micro-LID Transistors
LDT5210 and LDT5210T
Electrical Characteristics (25°C Ambient)
Parameter
Collector-Base Breakdown
Ic = 10 uA, Ie = 0
Collector-Emitter Breakdown*
Ib = 0, Ic = 10 mA
Emitter-Base Breakdown
Ic = 0, Ie = 10 uA
Collector-Base Cutoff Current
Vcb = 35 V
Emitter-Base Cutoff Current
Veb = 3 V
DC Forward Current Gain*
Ic = 100 uA, Vce = 5 V
Collector-Emitter Saturation
Ic = 10 mA, Ib = 1 mA
Base-Emitter Saturation
Ic = 10 mA, Ib = 1 mA
Collector Capacitance
Vcb = 5 V, Ie = 0
f = 1 MHz
Symbol
BVcbo
BVceo
BVebo
Icbo
Iebo
Hfe
Vce (sat)
Vbe (sat)
Cobo
Min
50
50
5
--
--
200
--
--
--
Typ
--
--
--
--
--
--
--
--
--
Max
--
--
--
50
50
600
.7
.9
4
V
V
pF
Units
V
V
V
nA
nA
* Pulse test, pulse width < 300 usec, duty cycle < 2%
Data Sheet LDT5210 / LDT5210T
Rev. B
Page 4 of 4
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