MJD44H11 — NPN Epitaxial Silicon Transistor
March 2009
MJD44H11
NPN Epitaxial Silicon Transistor
•
•
•
•
•
•
•
General Purpose Power and Switching Such as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, "- I" Suffix)
Electrically Similar to Popular MJE44H
Fast Switching Speeds
Low Collector Emitter Saturation Voltage
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
Symbol
V
CEO
V
EBO
I
C
I
CP
T
J
T
STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector-Current (Pulse)
Junction Temperature
Storage Temperature
Parameter
Value
80
5
8
16
150
- 65 ~ 150
Units
V
V
A
A
°C
°C
Thermal Characteristics
T
a
= 25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
T
c
= 25°C
T
a
= 25°C
Max.
20
1.75
6.25
71.4
Units
W
°
C/W
°
C/W
© 2009 Fairchild Semiconductor Corporation
MJD44H11 Rev. B1
1
www.fairchildsemi.com
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Datasheet contains the design specifications for product development. Specifications may change in
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I39
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