PD-91852J
IRHNA57064
JANSR2N7468U2
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number
IRHNA57064
IRHNA53064
IRHNA55064
IRHNA58064
Radiation Level
100 kRads(Si)
300 kRads(Si)
500 kRads(Si)
1000 kRads(Si)
RDS(on)
5.6m
5.6m
5.6m
6.5m
I
D
75A*
75A*
75A*
75A*
QPL Part Number
JANSR2N7468U2
JANSF2N7468U2
JANSG2N7468U2
JANSH2N7468U2
60V, N-CHANNEL
REF: MIL-PRF-19500/673
R5
TECHNOLOGY
SMD-2
Description
IRHNA57064 is part of the International Rectifier HiRel
family of products. IR HiRel R5 technology provides high
performance power MOSFETs for space applications.
These devices have been characterized for both Total
Dose and Single Event Effect (SEE) with useful
performance up to LET of 80 (MeV/(mg/cm
2
). The
combination of low R
DS
(on) and low gate charge reduces
the power losses in switching applications such as DC-
DC converters and motor controllers. These devices
retain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Package
Light Weight
Surface Mount
ESD Rating: Class 3B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
I
D
@ V
GS
= 12V, T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
300 (for 5s)
3.3 (Typical)
75*
75*
300
250
2.0
± 20
500
75
25
4.4
-55 to + 150
I
D
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
2018-03-09
IRHNA57064
JANSR2N7468U2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
60
–––
–––
2.0
45
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– –––
0.065 –––
–––
5.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
6080
2310
90
4.0
–––
10
25
100
-100
165
55
65
35
125
69
50
–––
–––
–––
–––
V
V/°C
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
Reference to 25°C, I
D
= 1.0mA
m V
GS
= 12V, I
D
= 75A
V
V
DS
= V
GS
, I
D
= 1.0mA
S
V
DS
= 15V, I
D
= 75A
V
DS
= 48V, V
GS
= 0V
µA
V
DS
= 48V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
I
D
= 45A
nC
V
DS
= 30V
V
GS
= 12V
V
DD
= 30V
I
D
= 45A
ns
R
G
= 2.35
V
GS
= 12V
nH
Measured from center of Drain
pad to center of Source pad
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
75*
300
1.3
200
538
A
V
ns
nC
Test Conditions
T
J
=25°C, I
S
= 75A, V
GS
=0V
T
J
=25°C, I
F
= 45A,V
DD
≤
25V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
* Current is limited by package
Thermal Resistance
Parameter
R
JC
R
J-PCB
Junction-to-Case
Junction-to-PC Board (Soldered to 2” sq copper clad board)
Min.
–––
–––
Typ.
–––
1.6
Max.
0.5
–––
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= 25V, starting T
J
= 25°C, L = 0.18mH, Peak I
L
= 75A, V
GS
= 12V
V
I
SD
45A, di/dt
196A/µs, V
DD
60V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias. 12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. 48 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2018-03-09
IRHNA57064
JANSR2N7468U2
Radiation Characteristics
Pre-Irradiation
IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-2)
Diode Forward Voltage
Up to 500 kRads (Si)
1
Min.
60
2.0
–––
–––
–––
–––
–––
–––
Max.
–––
4.0
100
-100
10
6.1
5.6
1.3
1000 kRads (Si)
2
Min.
60
1.5
–––
–––
–––
–––
–––
–––
Max.
–––
4.0
100
-100
25
7.1
6.5
1.3
V
V
nA
nA
µA
V
GS
= 0V, I
D
= 1.0mA
V
DS
= V
GS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 48V, V
GS
= 0V
Units
Test Conditions
m V
GS
= 12V, I
D
= 45A
m
V
V
GS
= 12V, I
D
= 45A
V
GS
= 0V, I
D
= 75A
1. Part numbers IRHNA57064 (JANSR2N7468U2), IRHNA53064 (JANSF2N7468U2) and IRHNA55064 (JANSG2N7468U2)
2. Part number IRHNA58064 (JANSH2N7468U2)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm
2
))
38 ± 5%
61 ± 5%
84 ± 5%
Energy
(MeV)
300 ± 7.5%
330 ± 7.5%
350 ± 10%
Range
(µm)
38 ± 7.5%
31 ± 10%
28 ± 7.5%
VDS (V)
@ VGS = 0V @ VGS=-5V @ VGS=-10V @ VGS =-15V @ VGS=-20V
60
46
35
60
46
30
60
35
25
60
25
20
30
15
14
70
60
50
40
30
20
10
0
0
-5
-10
Bias VGS (V)
-15
-20
Bias VDS (V)
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2018-03-09
IRHNA57064
JANSR2N7468U2
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
100
5.0V
5.0V
10
0.1
1
20µs PULSE WIDTH
T
J
= 25
°
C
10
100
V
DS
, Drain-to-Source Voltage (V)
10
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
2.0
Fig 2.
Typical Output Characteristics
I
D
= 75A
T = 25
°
C
J
T = 150
°
C
J
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
1.5
100
1.0
0.5
10
5.0
V DS = 25V
20µs PULSE WIDTH
5.5
6.0
6.5
7.0
7.5
8.0
0.0
-60 -40 -20
V
GS
= 12V
0
20 40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
10000
Fig 4.
Normalized On-Resistance Vs. Temperature
20
V
GS
, Gate-to-Source Voltage (V)
8000
V
GS
= 0V,
f = 1M
Hz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
= 45A
V
DS
= 48V
V
DS
= 30V
16
C, Capacitance (pF)
6000
Ciss
Coss
12
4000
8
2000
4
0
Crss
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
25
50
75
100
125
150
175
200
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
4
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
2018-03-09
International Rectifier HiRel Products, Inc.
IRHNA57064
JANSR2N7468U2
Pre-Irradiation
1000
OPERATION IN THIS AREA LIMITED BY
DS(
on)
R
100s
ID, Drain-to-Source Current (A)
100
1ms
10
10ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
DC
0.1
100
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
160
Fig 8.
Maximum Safe Operating Area
1000
E
AS
, Single Pulse Avalanche Energy (mJ)
LIM
ITED BY PACKAGE
800
I
D
, Drain Current (A)
120
ID
TOP
33.5A
47.4A
BOTTOM
75A
600
80
400
40
200
0
25
50
75
100
125
150
0
T
C
, Case Temperature
( °C)
25
50
75
100
125
150
Starting
J
, Junction Temperature
T
(
°
C)
Fig 9.
Maximum Drain Current Vs. Case Temperature
1
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
International Rectifier HiRel Products, Inc.
2018-03-09
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