PD - 9.1717
IRFE9230
JANTX2N6851U
REPETITIVE AVALANCHE AND dv/dt RATED
JANTXV2N6851U
HEXFET
®
TRANSISTOR
JANS2N6851U
[REF:MIL-PRF-19500/564]
P-CHANNEL
-200Volt, 0.80Ω, HEXFET
Ω
The leadless chip carrier (LCC) package represents
the logical next step in the continual evolution of
surface mount technology. The LCC provides
designers the extra flexibility they need to increase
circuit board density. International Rectifier has
engineered the LCC package to meet the specific
needs of the power market by increasing the size of
the bottom source pad, thereby enhancing the
thermal and electrical performance. The lid of the
package is grounded to the source to reduce RF
interference.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits, and
virtually any application where high reliability is re-
quired.
Product Summary
Part Number
IRFE9230
BV
DSS
-200V
R
DS(on)
0.80Ω
I
D
-4.0A
Features:
n
n
n
n
n
n
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Small footprint
Surface Mount
Lightweight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C Continuous Drain Current
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
PD @ TC = 25°C
VGS
EAS
dv/dt
TJ
TSTG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Surface Temperature
Weight
300 ( for 5 seconds)
0.42 (typical)
IRFE9230, JANTX-, JANTXV-, JANS-, 2N6851U
Units
A
W
W/K
V
mJ
V/ns
o
-4.0
-2.4
-16
25
0.20
±20
171
-1.1
-55 to 150
C
g
www.irf.com
1
3/25/98
IRFE9230, JANTX-, JANTXV-, JANS-, 2N6851U Device
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-200
—
—
—
-2.0
2.2
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
-0.21
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.8
4.3
—
—
0.80
1.68
-4.0
—
-25
-250
100
-100
35
6.1
21
50
100
80
80
—
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS =0 V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -10V, ID = -2.4A
VGS = -10V, ID = -4.0A
VDS = VGS, ID = -250µA
VDS > 15V, IDS = -2.4A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20 V
VGS = -20V
VGS = -10V, ID = -4.0A
VDS = Max Rating x 0.5
VDD = -100V, ID = -4.0A,
RG = 7.5Ω
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
LS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
nA
nC
ns
Measured from drain pad to
die.
Modified MOSFET symbol show-
ing the internal inductances.
nH
Measured from center of
source pad to the end of
source bonding wire.
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
700
200
45
—
—
—
pF
VGS = 0V, VDS = -25 V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-4.0
-16
-5.6
400
4.0
Test Conditions
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
T
j
= 25°C, IS = -4.0A, VGS = 0V
Tj = 25°C, IF = -4.0A, di/dt
≤
-100A/µs
VDD
≤
-50V
A
V
ns
µC
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJPCB
Junction-to-Case
Junction-to-PC Board
Min Typ Max
—
—
—
—
5.0
Units
K/W
Test Conditions
19
Soldered to a copper clad PC board
Details of notes
2
through
are on the last page
www.irf.com
IRFE9230, JANTX-, JANTXV-, JANS-, 2N6851U Device
100
-I
D
, Drain-to-Source Current (A)
10
-I
D
, Drain-to-Source Current (A)
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
TOP
100
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
TOP
10
-4.5V
1
-4.5V
1
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -4.0A
-I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
10
1.5
T
J
= 150
°
C
1.0
0.5
1
4
5
6
V DS = -50V
20µs PULSE WIDTH
7
8
9
0.0
-60 -40 -20
V
GS
= -10V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
www.irf.com
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRFE9230, JANTX-, JANTXV-, JANS-, 2N6851U Device
1400
20
-V
GS
, Gate-to-Source Voltage (V)
1200
V
GS
C
iss
C
rss
C
oss
=
=
=
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
I
D
= -4.0 A
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
16
C, Capacitance (pF)
1000
800
C
iss
12
600
8
400
C
oss
C
rss
200
4
0
1
10
100
0
0
5
10
15
FOR TEST CIRCUIT
SEE FIGURE 13
20
25
30
35
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 150
°
C
-I
D
, Drain Current (A)
I
10us
10
100us
T
J
= 25
°
C
1
1ms
1
10ms
0.1
1.0
V
GS
= 0 V
2.0
3.0
4.0
5.0
0.1
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
1000
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
www.irf.com
IRFE9230, JANTX-, JANTXV-, JANS-, 2N6851U Device
4.0
V
DS
V
GS
R
G
R
D
D.U.T.
+
-I
D
, Drain Current (A)
3.0
-10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
2.0
Fig 10a.
Switching Time Test Circuit
1.0
V
GS
10%
t
d(on)
t
r
t
d(off)
t
f
0.0
25
50
75
100
125
150
90%
V
DS
T
C
, Case Temperature ( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
10
1
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
-
V
DD
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
