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MXLP4KE250CATR

产品描述Trans Voltage Suppressor Diode, 400W, 214V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
产品类别分立半导体    二极管   
文件大小373KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
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MXLP4KE250CATR概述

Trans Voltage Suppressor Diode, 400W, 214V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

MXLP4KE250CATR规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Microsemi
零件包装代码DO-41
包装说明PLASTIC, DO-41, 2 PIN
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性HIGH RELIABILITY
最大击穿电压263 V
最小击穿电压237 V
击穿电压标称值250 V
外壳连接ISOLATED
最大钳位电压344 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-204AL
JESD-30 代码O-PALF-W2
JESD-609代码e0
最大非重复峰值反向功率耗散400 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
极性BIDIRECTIONAL
最大功率耗散2.5 W
认证状态Not Qualified
最大重复峰值反向电压214 V
表面贴装NO
技术AVALANCHE
端子面层TIN LEAD
端子形式WIRE
端子位置AXIAL

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TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
400W Transient Voltage Suppressor
- High Reliability controlled devices
- Economical series for thru hole mounting
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 5.8 to 342 V standoff voltages (V
WM
)
- Fast response
LEVELS
M, MA, MX, MXL
DEVICES
MP4KE6.8A thru MP4KE400CA, e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500
Refer to
MicroNote 129
for more details on the screening options.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding “e3” suffix
3σ lot norm screening performed on Standby Current I
D
APPLICATIONS / BENEFITS
Suppresses transients up to 400 watts @ 10/1000
s
(see Figure 1)
2
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching transients & induced RF
Compliant to IEC 61000-4-2 and IEC 61000-4-4 for ESD and EFT protection respectively.
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:
o
Class 1: MP4KE5.0A to MP4KE91CA
o
Class 2: MP4KE5.0A to MP4KE47ACA
o
Class 3: MP4KE5.0A to MP4KE24CA
o
Class 4: MP4KE5.0A to MP4KE12CA
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:
o
Class 1: MP4KE5.0A to MP4KE30CA
o
Class 2: MP4KE5.0A to MP4KE15CA
DO-41 (DO-204AL)
MAXIMUM RATINGS
Operating and Storage Temperature: -65 °C to +150 °C
Peak Pulse Power: 400 Watts at 10/1000
s
(see Figures 1, 2 and 3 for t
W
, waveform and
derating effects) with impulse repetition rate (duty factor) of 0.01 % or less
Thermal Resistance: 50 °C /W junction to leads @ 3/8 inch (10 mm) from body, or 110
C/W
2
junction to ambient when mounted on FR4 PC board with 4 mm copper pads (1 oz) and track
width 1 mm, length 25 mm
Steady-State Power: 2.5 Watts @ TL=25
C
at 3/8 inch (10 mm) from body, or 1.13 W at TA =
25 ºC on FR4 PC board described for thermal resistance
Forward Voltage at 25
C:
3.5 V @ 30 A with 8.3 ms half-sine wave (unidirectional only
Solder temperatures: 260
C
for 10 s (maximum)
RF01006 Rev A, June 2010
High Reliability Product Group
Page 1 of 4

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