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SM5S30A2E

产品描述Trans Voltage Suppressor Diode, 2800W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB
产品类别分立半导体    二极管   
文件大小63KB,共3页
制造商Vishay(威世)
官网地址http://www.vishay.com
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SM5S30A2E概述

Trans Voltage Suppressor Diode, 2800W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB

SM5S30A2E规格参数

参数名称属性值
厂商名称Vishay(威世)
包装说明R-PSSO-C1
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性PATENTED DEVICE
最大击穿电压36.8 V
最小击穿电压33.3 V
外壳连接ANODE
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-218AB
JESD-30 代码R-PSSO-C1
最大非重复峰值反向功率耗散2800 W
元件数量1
端子数量1
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性UNIDIRECTIONAL
最大功率耗散5 W
认证状态Not Qualified
最大重复峰值反向电压30 V
表面贴装YES
技术AVALANCHE
端子形式C BEND
端子位置SINGLE

文档预览

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SM5S
Series
Surface Mount Automotive
Transient Voltage Suppressors
DO-218AB
0.628(16.0)
0.592(15.0)
0.539(13.7)
0.524(13.3)
0.116(3.0)
0.093(2.4)
0.413(10.5) 0.342(8.7)
0.374(9.5) 0.327(8.3)
ct
odu *
Pr ed
ew ent
N t
Pa
0.413(10.5)
0.374(9.5)
Stand-off Voltage
10 to 36V
Peak Pulse Power
3600W (10/1000µs)
2800W (10/10,000µs)
Mounting Pad Layout
0.091(2.3)
0.067(1.7)
0.116(3.0)
0.093(2.4)
0.366(9.3)
0.343(8.7)
0.406(10.3)
0.382(9.7)
Dimensions in
inches and (millimeters)
LEAD 1
0.366(9.3)
0.343(8.7)
0.150(3.8)
0.126(3.2)
0.197(5.0)
0.185(4.7)
0.138(3.5)
0.098(2.5)
0.606(15.4)
0.583(14.8)
*
Patent #’s:
0.016 (0.4) Min.
0.028(0.7)
0.020(0.5)
0.098(2.5)
0.059(1.5)
4,980,315
5,166,769
5,278,095
LEAD 2/METAL HEATSINK
Features
• Ideally suited for load dump protection
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• High temperature stability due to unique oxide passivation
and patented PAR
®
construction
• Integrally molded heatsink provides a very low thermal
resistance for maximum heat dissipation
• Low leakage current at T
J
= 175°C
• High temperature soldering guaranteed:
260°C for 10 seconds at terminals
• Meets ISO7637-2 surge spec.
• Low forward voltage drop
Mechanical Data
Case:
Molded plastic body, surface mount with heatsink
integrally mounted in the encapsulation
Terminals:
Plated, solderable per MIL-STD-750, Method 2026
Polarity:
Heatsink is anode
Mounting Position:
Any
Weight:
0.091oz., 2.58g
Packaging codes/options:
2D/750 per 13” Reel (16mm Tape),
anode towards sprocket hole, 4.5K/box
2E/750 per 13” Reel (16mm Tape),
cathode towards sprocket hole, 4.5K/box
Maximum Ratings and Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Peak pulse power dissipation with 10/1000µs waveform
10/10,000µs waveform
Steady state power dissipation
Peak pulse current with a 10/1000µs waveform
(1)
Peak forward surge current, 8.3ms single half sine-wave
Typical thermal resistance junction to case
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse derated above T
A
= 25°C
Symbol
P
PPM
P
D
I
PPM
I
FSM
R
θJC
T
J
, T
STG
Value
3600
2800
5.0
See Table 1
500
1.0
–55 to +175
Unit
W
W
A
A
°C/W
°C
8/28/01

 
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