Small Signal Bipolar Transistor
参数名称 | 属性值 |
厂商名称 | Nexperia |
包装说明 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | compliant |
其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC) | 0.5 A |
集电极-发射极最大电压 | 50 V |
配置 | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE) | 33 |
JEDEC-95代码 | TO-236AB |
JESD-30 代码 | R-PDSO-G3 |
元件数量 | 1 |
端子数量 | 3 |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | PNP |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
PDTB113ET,235 | 934058978215 | PDTB113ET | |
---|---|---|---|
描述 | Small Signal Bipolar Transistor | Small Signal Bipolar Transistor | Small Signal Bipolar Transistor |
厂商名称 | Nexperia | Nexperia | Nexperia |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | compliant | compliant | compliant |
其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC) | 0.5 A | 0.5 A | 0.5 A |
集电极-发射极最大电压 | 50 V | 50 V | 50 V |
配置 | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE) | 33 | 33 | 33 |
JEDEC-95代码 | TO-236AB | TO-236AB | TO-236AB |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
元件数量 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | PNP | PNP | PNP |
表面贴装 | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON |
是否Rohs认证 | - | 符合 | 符合 |
JESD-609代码 | - | e3 | e3 |
湿度敏感等级 | - | 1 | 1 |
端子面层 | - | Tin (Sn) | Tin (Sn) |
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