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JANTXV1N753CUR-1

产品描述Zener Diode, 6.2V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA,
产品类别分立半导体    二极管   
文件大小76KB,共21页
制造商Compensated Devices Inc
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JANTXV1N753CUR-1概述

Zener Diode, 6.2V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA,

JANTXV1N753CUR-1规格参数

参数名称属性值
厂商名称Compensated Devices Inc
Reach Compliance Codeunknown
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JEDEC-95代码DO-213AA
JESD-30 代码O-LELF-R2
湿度敏感等级NOT SPECIFIED
元件数量1
端子数量2
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散0.5 W
认证状态Not Qualified
标称参考电压6.2 V
表面贴装YES
技术ZENER
端子形式WRAP AROUND
端子位置END
处于峰值回流温度下的最长时间NOT SPECIFIED
最大电压容差2%
工作测试电流20 mA

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The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 3 August 2004.
INCH-POUND
MIL-PRF-19500/127P
3 May 2004
SUPERSEDING
MIL-PRF-19500/127N
09 July 1999
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
TYPES 1N4370A-1 THROUGH 1N4372A-1, AND 1N746A-1 THROUGH 1N759A-1, 1N4370AUR-1 THROUGH
1N4372AUR-1 AND 1N746AUR-1 THROUGH 1N759AUR-1, 1N4370C-1 THROUGH 1N4372C-1, AND 1N746C-1
THROUGH 1N759C-1, 1N4370CUR-1 THROUGH 1N4372CUR-1 AND 1N746CUR-1 THROUGH 1N759CUR-1,
1N4370D-1, THROUGH 1N4372D-1, AND 1N746D-1 THROUGH 1N759D-1, 1N4370DUR-1 THROUGH
1N4372DUR-1 AND 1N746DUR-1 THROUGH 1N759DUR-1,
JAN, JANTX, JANTXV, JANHC, AND JANKC
JANS level (see 6.4).
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall
consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator
diodes with voltage tolerances of 5, 2, and 1 percent. Three levels of product assurance are provided for each
encapsulated device type as specified in MIL-PRF-19500. Two level of product assurance is provided for each
unencapsulated device .
1.2 Physical dimensions. See 3.4 and figure 1 (similar to DO-35) and figure 2 (similar to DO-213AA), and figures
3 and 4 for die.
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.9) herein and
as follows:
P
T
= 500 mW, (DO-35) at T
L
= +50
°
C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at
L = .375 inch (9.53 mm). Derate I
Z
to 0.0 mA dc at +175
°
C.
P
T
= 500 mW, (DO-213AA) at T
EC
= +125
°
C, derate to 0 at +175
°
C. -65
°
C
T
J
+175
°
C; -65
°
C
T
STG
+175
°
C.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to
Semiconductor@dscc.dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
http://www.dodssp.daps.mil.
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