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CMLT8099MTR: 产品描述Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, NPN, Silicon, HALOGEN FREE AND PLASTIC, PICOMINI-6; 产品类别分立半导体晶体管; 文件大小673KB，共2页; 制造商Central Semiconductor

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CMLT8099MTR概述

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, NPN, Silicon, HALOGEN FREE AND PLASTIC, PICOMINI-6

CMLT8099MTR规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Central Semiconductor
包装说明	SMALL OUTLINE, R-PDSO-F6
针数	6
Reach Compliance Code	not_compliant
ECCN代码	EAR99
最大集电极电流 (IC)	0.5 A
集电极-发射极最大电压	80 V
配置	SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)	75
JESD-30 代码	R-PDSO-F6
JESD-609代码	e0
元件数量	2
端子数量	6
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	NPN
最大功率耗散 (Abs)	0.35 W
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	FLAT
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	150 MHz

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CMLT8099M

SURFACE MOUNT

DUAL, MATCHED

NPN SILICON TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT8099M

consists of two individual, isolated 8099 NPN silicon

transistors with matched VBE(ON) characteristics.

This PICOmini™ device is manufactured by the

epitaxial planar process and epoxy molded in an

SOT-563 surface mount package.

MARKING CODE: 8CM

SOT-563 CASE

• Device is

Halogen Free

by design

APPLICATIONS:

• Small signal general purpose amplifiers

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

FEATURES:

• Transistor pair matched for VBE(ON)

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

6.0

500

350

-65 to +150

357

UNITS

°C

°C/W

UNITS

µA

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

SYMBOL

TEST CONDITIONS

ICBO

VCB=80V

IEBO

VBE=6.0V

BVCBO

IC=100µA

BVCEO

IC=10mA

BVEBO

IE=10µA

VCE(SAT)

IC=100mA, IB=5.0mA

VCE(SAT)

IC=100mA, IB=10mA

VBE(ON)

VCE=5.0V, IC=10mA

hFE

VCE=5.0V, IC=1.0mA

hFE

VCE=5.0V, IC=10mA

hFE

VCE=5.0V, IC=100mA

VCE=5.0V, IC=10mA, f=100MHz

Cob

VCB=10V, IE=0, f=1.0MHz

Cib

VBE=0.5V, IC=0, f=1.0MHz

MATCHING CHARACTERISTICS:

SYMBOL

TEST CONDITIONS

VBE1-VBE2

VCE=5.0V, IC=1.0µA

VBE1-VBE2

VCE=5.0V, IC=5.0µA

VBE1-VBE2

VCE=5.0V, IC=10µA

VBE1-VBE2

VCE=5.0V, IC=100µA

(TA=25°C unless otherwise noted)

MIN

MAX

0.1

6.0

0.4

0.3

0.6

0.8

100

300

100

150

6.0

MIN

MAX

MHz

UNITS

R1 (20-January 2010)

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