Datasheet> 器件分类 > 分立半导体> 晶体管> CMPDM7002AGTR

CMPDM7002AGTR: 产品描述Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-3; 产品类别分立半导体晶体管; 文件大小735KB，共5页; 制造商Central Semiconductor

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CMPDM7002AGTR概述

Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-3

CMPDM7002AGTR规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Central Semiconductor
包装说明	SMALL OUTLINE, R-PDSO-G3
针数	3
Reach Compliance Code	not_compliant
ECCN代码	EAR99
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	60 V
最大漏极电流 (Abs) (ID)	0.28 A
最大漏极电流 (ID)	0.28 A
最大漏源导通电阻	2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	5 pF
JESD-30 代码	R-PDSO-G3
JESD-609代码	e0
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	0.35 W
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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CMPDM7002A

CMPDM7002AG*

SURFACE MOUNT

N-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPDM7002A

and CMPDM7002AG are special versions of the

2N7002 Enhancement-mode N-Channel Field Effect

Transistor, manufactured by the N-Channel DMOS

Process, designed for high speed pulsed amplifier and

driver applications. These special devices offer low

rDS(ON) and low VDS (ON).

MARKING CODES: CMPDM7002A:

C702A

CMPDM7002AG*: 702G

SOT-23 CASE

Device is

Halogen Free

by design

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current

Continuous Source Current (Body Diode)

Maximum Pulsed Drain Current

Maximum Pulsed Source Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VDS

VDG

VGS

IDM

ISM

TJ, Tstg

otherwise noted)

MIN

280

1.5

350

-65 to +150

357

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless

SYMBOL

TEST CONDITIONS

IGSSF, IGSSR VGS=20V, VDS=0

IDSS

VDS=60V, VGS=0

IDSS

VDS=60V, VGS=0, TJ=125°C

ID(ON)

VGS=10V, VDS=10V

BVDSS

VGS=0, ID=10µA

VGS(th)

VDS=VGS, ID=250µA

VDS(ON)

VGS=10V, ID=500mA

VDS(ON)

VGS=5.0V, ID=50mA

VSD

VGS=0, IS=400mA

rDS(ON)

VGS=10V, ID=500mA

rDS(ON)

VGS=10V, ID=500mA, TJ=125°C

rDS(ON)

VGS=5.0V, ID=50mA

VGS=5.0V, ID=50mA, TJ=125°C

rDS(ON)

gFS

VDS=10V, ID=200mA

Crss

VDS=25V, VGS=0, f=1.0MHz

Ciss

VDS=25V, VGS=0, f=1.0MHz

Coss

VDS=25V, VGS=0, f=1.0MHz

ton, toff

VDD=30V, VGS=10V, ID=200mA,

RG=25Ω, RL=150Ω

MAX

100

1.0

500

1.0

2.5

1.0

0.15

1.2

2.0

3.5

3.0

5.0

UNITS

µA

R4 (27-January 2010)

CMPDM7002AGTR相似产品对比

	CMPDM7002AGTR	CMPDM7002ALEADFREE	CMPDM7002AGBK	CMPDM7002AGBKLEADFREE	CMPDM7002AGTR13	CMPDM7002ABK	CMPDM7002ATR
描述	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-3	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-3	Small Signal Field-Effect Transistor,	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-3	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
Reach Compliance Code	not_compliant	compliant	compliant	compliant	compliant	not_compliant	not_compliant
是否Rohs认证	不符合	符合	-	-	-	不符合	不符合
厂商名称	Central Semiconductor	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
包装说明	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
针数	3	3	3	-	3	3	3
ECCN代码	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	60 V	60 V	60 V	-	60 V	60 V	60 V
最大漏极电流 (ID)	0.28 A	0.28 A	0.28 A	-	0.28 A	0.28 A	0.28 A
最大漏源导通电阻	2 Ω	2 Ω	2 Ω	-	2 Ω	2 Ω	2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	5 pF	5 pF	5 pF	-	5 pF	5 pF	5 pF
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	-	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609代码	e0	e3	e3	-	e3	e0	e0
元件数量	1	1	1	-	1	1	1
端子数量	3	3	3	-	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	-	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	-	YES	YES	YES
端子面层	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	MATTE TIN	-	MATTE TIN	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	GULL WING	GULL WING	-	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	-	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	-	SILICON	SILICON	SILICON

CMPDM7002AGTR

CMPDM7002AGTR概述

CMPDM7002AGTR规格参数

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CMPDM7002AGTR相似产品对比

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