CBCX68 SERIES NPN
CBCX69 SERIES PNP
w w w. c e n t r a l s e m i . c o m
SURFACE MOUNT
COMPLEMENTARY SILICON
SMALL SIGNAL TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBCX68 and
CBCX69 series types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount package,
designed for applications requiring high current
capability.
MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
A
A
mA
mA
W
°C
°C/W
25
20
5.0
1.0
2.0
100
200
1.2
-65 to +150
104
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=25V
ICBO
VCB=25V, TA=150°C
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(ON)
VBE(ON)
hFE
hFE
hFE
hFE
hFE
fT
VEB=5.0V
IC=10μA
IC=10mA
IE=10μA
IC=1.0A, IB=100mA
VCE=10V, IC=5.0mA
VCE=1.0V, IC=1.0A
VCE=10V, IC=5.0mA
VCE=1.0V, IC=500mA (CBCX68, CBCX69)
VCE=1.0V, IC=500mA (CBCX68-16, CBCX69-16)
VCE=1.0V, IC=500mA (CBCX68-25, CBCX69-25)
VCE=1.0V, IC=1.0A
VCE=5.0V, IC=10mA, f=20MHz
50
85
100
160
60
65
25
20
5.0
TYP
MAX
100
10
10
UNITS
nA
μA
μA
V
V
V
0.5
0.6
1.0
375
250
400
V
V
V
MHz
R11 (23-February 2012)
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