MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF5S19100L/D
The RF MOSFET Line
RF Power Field Effect Transistors
MRF5S19100LR3
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies up to
1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier
applications.
•
Typical 2–Carrier N–CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 1000 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 –885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 –2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 22 Watts Avg.
Power Gain — 13.9 dB
Efficiency — 25.5%
ACPR — –50.7 dB
IM3 — –36.5 dBc
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
µ″
Nominal.
MRF5S19100LSR3
1990 MHz, 22 W AVG, 2 x N–CDMA
28 V LATERAL N–CHANNEL
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465–06, STYLE 1
NI–780
MRF5S19100LR3
CASE 465A–06, STYLE 1
NI–780S
MRF5S19100LSR3
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
–0.5, +15
236
1.35
–65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 75°C, 100 W CW
Case Temperature 70°C, 22 W CW
Symbol
R
θJC
Max
0.74
0.76
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF5S19100LR3 MRF5S19100LSR3
1
Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
2 (Minimum)
M3 (Minimum)
C7 (Minimum)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 240
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1000 mAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 2.4 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2.4 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
—
2.2
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
—
—
—
—
2.7
3.7
0.26
6.3
—
—
—
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) 2–Carrier N–CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR
measured in 30 kHz Bandwidth and IM3 measured in 1.2288 MHz Bandwidth. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
(V
DD
= 28 Vdc, P
out
= 22 W Avg., I
DQ
= 1000 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 22 W Avg., I
DQ
= 1000 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 22 W Avg., I
DQ
= 1000 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured
over 1.2288 MHz bandwidth @ f1 –2.5 MHz and f2 = +2.5 MHz)
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 22 W Avg., I
DQ
= 1000 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR
measured over 30 kHz bandwidth @ f1 –885 MHz and f2 =+885 MHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 22 W Avg., I
DQ
= 1000 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
(1) Part is internally matched both on input and output.
G
ps
12.5
13.9
—
dB
η
24
25.5
—
%
IM3
—
–36.5
–35
dBc
ACPR
—
–50.7
–48
dBc
IRL
—
–13
–9
dB
MRF5S19100LR3 MRF5S19100LSR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
2
Go to: www.freescale.com
Freescale Semiconductor, Inc.
B1
V
GG
R1
R2
+
+
C7
+
+
W1
+
C13
V
DD
+
C14
C3
C4
C5
R3
C8
C9
C10
R4
C11
C12
C6
Z9
Z6
RF
INPUT
Z1
Z2
C15
Z3
C16
C1
Z4
Z5
Z7
DUT
Z8
Z10
Z11
Z12
C2
Z13
Z14
C17
RF
OUTPUT
Freescale Semiconductor, Inc...
Z1, Z3
Z2
Z4
Z5
Z6
Z7
Z8
0.140″ x 0.080″ Microstrip
0.450″ x 0.080″ Microstrip
0.525″ x 0.080″ Microstrip
0.636″ x 0.141″ Microstrip
0.650″ x 0.050″ Microstrip
0.320″ x 1.299″ Microstrip
0.091″ x 1.133″ Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
PCB
0.590″ x 0.071″ Microstrip
0.450″ x 1.133″ Microstrip
0.450″ x 0.141″ Microstrip
0.490″ x 0.080″ Microstrip
0.085″ x 0.080″ Microstrip
1.124″ x 0.080″ Microstrip
Arlon GX–0300–55–22, 0.030″,
ε
r
= 2.55
Figure 1. MRF5S19100LR3(LSR3) Test Circuit Schematic
Table 1. MRF5S19100LR3(LSR3) Test Circuit Component Designations and Values
Part
B1
C1
C2
C3
C4, C12
C5, C11
C6
C7
C8
C9, C10, C13, C14
C15
C16
C17*
R1
R2
R3, R4
W1
Short RF Bead
22 pF Chip Capacitor, B Case
10 pF Chip Capacitor, B Case
1
µF,
50 V Tantalum Capacitor
0.1
µF
Chip Capacitors, B Case
1K pF Chip Capacitors, B Case
2.7 pF Chip Capacitor, B Case
4.3 pF Chip Capacitor, B Case
10
µF,
35 V Tantalum Capacitor
22
µF,
35 V Tantalum Capacitors
0.6 – 4.5 Gigatrim Variable Capacitor
2.2 pF Chip Capacitor, B Case
0.3 pF Chip Capacitor, B Case
1 kW Chip Resistor
560 kW Chip Resistor
12
W
Chip Resistors
1 turn 14 gauge wire
Description
Value, P/N or DWG
95F786
100B220CP 500X
100B100CP 500X
T494C105(1)050AS
CDR33BX104AKWS
100B102JP 500X
100B2R7BP 500X
100B4R3JP 500X
T494D106(1)035AS
T494X226(1)035AS
44F3358
100B2R2BP 500X
100B0R3BP 500X
D5534M07B1K00R
CR1206 564JT
RM73B2B120JT
Manufacturer
Newark
ATC
ATC
Kemet
Kemet
ATC
ATC
ATC
Kemet
Kemet
Newark
ATC
ATC
Newark
Newark
Garrett Electronics
* Need for part will vary from fixture to fixture.
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF5S19100LR3 MRF5S19100LSR3
3
Freescale Semiconductor, Inc.
MRF5S19100
Rev 1
C6
VGG
R1
B1
R2 C3 C4
C1
C5
R3
C7
W1
C8
C9 C10
C11 C12
R4
C13
C2
C14
VDD
C15
C16
CUT OUT AREA
C17
Freescale Semiconductor, Inc...
Figure 2. MRF5S19100LR3(LSR3) Test Circuit Component Layout
MRF5S19100LR3 MRF5S19100LSR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
4
Go to: www.freescale.com
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
G
ps
η
η
, DRAIN
EFFICIENCY (%)
15
14
13
G ps , POWER GAIN (dB)
12
11
10
9
8
7
6
IRL
IM3
ACPR
V
DD
= 28 Vdc, P
out
= 22 W (Avg.), I
DQ
= 1000 mA
2-Carrier N-CDMA, 2.5 MHz Carrier Spacing
40
35
30
25
20
-35
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
-40
-45
-50
IM3 (dBc), ACPR (dBc)
-30
-10
-15
-20
-25
-30
-35
5
-55
1860 1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 3. 2–Carrier N–CDMA Broadband Performance
16
15
G ps , POWER GAIN (dB)
14
13
530 mA
12
11
10
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two-Tone Measurement, 2.5 MHz Tone Spacing
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
I
DQ
= 1500 mA
1300 mA
1000 mA
760 mA
IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
-15
-20
-25
-30
-35
-40
-45
-50
-55
1
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two-Tone Measurement, 2.5 MHz Tone Spacing
1300 mA
I
DQ
= 1500 mA
530 mA
1000 mA
760 mA
10
P
out
, OUTPUT POWER (WATTS) PEP
100
Figure 4. Two–Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
-25
-30
-35
-40
-45
-50
-55
Pout , OUTPUT POWER (dBm)
V
DD
= 28 Vdc, P
out
= 100 W (PEP), I
DQ
= 1000 mA
Two-Tone Measurements, Center Frequency = 1960 MHz
3rd Order
58
57
56
55
54
53
52
51
50
49
48
47
46
32
P3dB = 51.98 dBm (157.81 W)
P1dB = 51.3 dBm (135.01 W)
Actual
Ideal
5th Order
7th Order
0.1
1
TWO-TONE SPACING (MHz)
10
40
V
DD
= 28 Vdc, I
DQ
= 1000 mA
Pulsed CW, 8
µsec(on),
1 msec(off)
Center Frequency = 1960 MHz
33
34
35
36
37
38
39
40
41
42
43
44
P
in
, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF5S19100LR3 MRF5S19100LSR3
5
IRL, INPUT RETURN LOSS (dB)
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