2N2218, A, AL &
2N2219, A, AL
NPN Switching Silicon Transistor
Rev. V2
Features
•
Available in JAN, JANTX, JANTXV and JANS per
MIL-PRF-19500/251
•
TO-5 & TO-39 (TO-205AD) Package
Electrical Characteristics
Parameter
Off Characteristics:
Collector
-
Emitter Breakdown Voltage
I
E
= 10 mA
V
EB
= 5 V
V
EB
= 6 V
V
EB
= 4 V
V
CE
= 30 V
V
CE
= 50 V
V
CB
= 50 V
V
CB
= 60 V
V
CB
= 60 V
V
CB
= 75 V
2N2218; 2N2219
2N2218A/AL; 2N2219A/AL
2N2218; 2N2219
2N2218A/AL; 2N2219A/AL
All types
2N2218; 2N2219
2N2218A/AL; 2N2219A/AL
2N2218; 2N2219
2N2218A/AL; 2N2219A/AL
2N2218; 2N2219
2N2218A/AL; 2N2219A/AL
Vdc
µAdc
nAdc
nAdc
nAdc
nAdc
µAdc
µAdc
30
50
—
—
—
10
10
10
10
10
10
10
10
Test Conditions
Part #
Units
Min.
Max.
Emitter
-
Base Cutoff Current
Collector
-
Emitter Cutoff Current
Collector
-
Base Cutoff Current
—
On Characteristics
1
:
I
C
= 0.1 mA, V
CE
= 10 V
2N2218
2N2219
2N2218A/AL
2N2219A/AL
2N2218
2N2219
2N2218A/AL
2N2219A/AL
2N2218
2N2219
2N2218A/AL
2N2219A/AL
2N2218/A/AL
2N2219/A/AL
2N2218/A/AL
2N2219/A/AL
2N2218; 2N2219
2N2218A/AL; 2N2219A/AL
Vdc
I
C
= 500 mA, I
B
= 50 mA
1
1. Pulse Test: Pulse Width = 300
μs,
Duty Cycle ≤ 2.0%.
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20
35
30
50
25
50
35
75
—
35
75
40
100
40
100
20
30
—
—
—
—
—
—
150
325
150
325
—
—
—
—
120
300
—
—
0.4
0.3
1.6
1.0
I
C
= 1 mA, V
CE
= 10 V
Forward Current Transfer Ratio
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
I
C
= 150 mA, I
B
= 15 mA
Collector
-
Emitter Saturation Voltage
2N2218; 2N2219
2N2218A/AL; 2N2219A/AL
2N2218, A, AL &
2N2219, A, AL
NPN Switching Silicon Transistor
Rev. V2
Electrical Specifications @ T
A
= 25°C
Parameter
On Characteristics
1
:
I
C
= 150 mA, I
B
= 15 mA
Base
-
Emitter Saturation Voltage
I
C
= 500 mA, I
B
= 50 mA
Dynamic Characteristics:
Small-Signal Short-Circuit,
Forward Current Transfer Ratio
Magnitude of
Small-Signal Short-Circuit,
Forward Current Transfer Ratio
Output Capacitance
Input Capacitance
Switching Characteristics
2
:
Turn-On Time
Turn-Off Time
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= 15 mA
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= 15 mA
2N2218, 2N2219
2N2218A, AL, 2N2219A, AL
2N2218, 2N2219
2N2218A, AL, 2N2219A, AL
ns
ns
—
—
40
35
250
300
I
C
= 1 mA, V
CE
= 20 V,
1 kHz
I
C
= 20 mA, V
CE
= 20 V,
100 MHz
V
CB
= 10 V, I
E
= 0,
100 kHz ≤ f ≤ 1 MHz
V
EB
= 0.5 V, I
C
= 0,
100 kHz ≤ f ≤ 1 MHz
2N2218
2N2219
2N2218A, AL
2N2219A, AL
—
—
—
pF
pF
25
50
35
75
2.5
—
—
2N2218; 2N2219
2N2218A/AL; 2N2219A/AL
2N2218; 2N2219
2N2218A/AL; 2N2219A/AL
Vdc
—
—
2.6
2.0
0.6
0.6
1.3
1.2
Test Conditions
Part #
Units
Min.
Max.
—
12
8
25
2. For Turn-On time see figure 3, and for Turn-Off time see figure 4 of MIL-PRF-19500/251.
Absolute Maximum Ratings @ T
C
= 25°C
Parameter
Collector
-
Emitter Voltage
Collector
-
Base Voltage
Emitter
-
Base Voltage
Collector Current
Total Power Dissipation
3,4
T
A
= +25ºC
T
C
= +25ºC
Thermal Resistance, Junction to Case
Operating & Storage Temperature
3. Derate linearly 4.6 mW/°C above T
A
> +25°C.
4. Derate linearly 17.0 mW/°C above T
C
> +25°C.
2
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for additional data sheets and product information.
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2N2218 & 2N2219
30 Vdc
60 Vdc
5 Vdc
2N2218A; AL & 2N2219A; AL
50 Vdc
75 Vdc
6 Vdc
800 mA
0.8 W
3.0 W
50ºC/W
-55°C
to +200°C
2N2218, A, AL &
2N2219, A, AL
NPN Switching Silicon Transistor
Rev. V2
Outline Drawing (TO-5 & TO-39)
Dimensions
LTR
Min.
Inches
Max.
Millimeters
Min.
Max.
Note
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
0.305
0.240
0.335
0.335
0.260
0.370
7.75
6.10
8.51
8.51
6.60
9.40
—
—
—
7
8, 9
0.200 TP
0.016
0.019
5.08 TP
0.41
0.48
See note 14
0.016
—
0.250
0.100
—
0.029
0.028
—
0.019
0.050
—
—
0.030
0.045
0.034
0.010
45° TP
6.35
2.54
—
0.74
0.71
—
0.41
0.48
1.27
—
—
0.76
1.14
0.86
0.25
45° TP
8, 9
8, 9
8, 9
7
5
3, 4
3
10
7
1.
2.
3.
4.
5.
6.
7.
Dimensions are in inches.
Millimeters are given for general information only.
Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
Dimension TL measured from maximum HD.
Body contour optional within zone defined by HD, CD, and Q.
CD shall not vary more than 0.010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
Leads at gauge plane 0.054 +0.001 –0.000 inch (1.37 +0.03
-0.00
mm) below seating plane shall be within 0.007 inch (0.18 mm) radius of
true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by
gauging procedure.
8. Dimension LU applies between L, and L,. Dimension LD applies between L, and LL minimum. Diameter is uncontrolled in and beyond LL
minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to
Фx
symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
14. For non-S-suffix devices (T0-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For S-suffix types (T0-39),
dimension LL = 0.5 inch (12.70 mm) min. and 750 inch (19.05 mm) max.
3
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Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
2N2218, A, AL &
2N2219, A, AL
NPN Switching Silicon Transistor
Rev. V2
VPT Components All rights reserved.
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provided by VPT Components as a service to its customers and may be used for informational purposes only.
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sumes no responsibility for errors or omissions in these materials. VPT Components may make changes to
specifications and product descriptions at any time, without notice. VPT Components makes no commitment to
update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from
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4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com