Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
Objectid | 1086860224 |
零件包装代码 | BCY |
包装说明 | CYLINDRICAL, O-MBCY-W3 |
针数 | 2 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
外壳连接 | COLLECTOR |
最大集电极电流 (IC) | 1 A |
集电极-发射极最大电压 | 350 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 40 |
JEDEC-95代码 | TO-205AD |
JESD-30 代码 | O-MBCY-W3 |
元件数量 | 1 |
端子数量 | 3 |
封装主体材料 | METAL |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
极性/信道类型 | NPN |
认证状态 | Qualified |
参考标准 | MIL-19500; RH - 50K Rad(Si) |
表面贴装 | NO |
端子形式 | WIRE |
端子位置 | BOTTOM |
晶体管元件材料 | SILICON |
最大关闭时间(toff) | 10000 ns |
最大开启时间(吨) | 1000 ns |
JANSL2N3439 | JANSR2N3439UA | JANSR2N3440 | 2N3439E3 | 2N3440E3 | JANSD2N3439 | JANSR2N3439 | JANSR2N3439L | |
---|---|---|---|---|---|---|---|---|
描述 | Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN | Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC, LCC-4 | RH POWER BJT | Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN | Small Signal Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN | Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN | Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC, LCC-4 | Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN |
包装说明 | CYLINDRICAL, O-MBCY-W3 | SMALL OUTLINE, R-CDSO-N4 | CYLINDRICAL, O-MBCY-W3 | TO-39, 3 PIN | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | SMALL OUTLINE, R-CDSO-N4 | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | compliant | compli | compliant | compliant | compliant | compliant | compliant | compli |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A |
集电极-发射极最大电压 | 350 V | 350 V | 250 V | 350 V | 250 V | 350 V | 350 V | 350 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 40 | 40 | 40 | 40 | 40 | 40 | 40 | 40 |
JESD-30 代码 | O-MBCY-W3 | R-CDSO-N4 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | R-CDSO-N4 | O-MBCY-W3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 4 | 3 | 3 | 3 | 3 | 4 | 3 |
封装主体材料 | METAL | CERAMIC, METAL-SEALED COFIRED | METAL | METAL | METAL | METAL | CERAMIC, METAL-SEALED COFIRED | METAL |
封装形状 | ROUND | RECTANGULAR | ROUND | ROUND | ROUND | ROUND | RECTANGULAR | ROUND |
封装形式 | CYLINDRICAL | SMALL OUTLINE | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | SMALL OUTLINE | CYLINDRICAL |
极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
表面贴装 | NO | YES | NO | NO | NO | NO | YES | NO |
端子形式 | WIRE | NO LEAD | WIRE | WIRE | WIRE | WIRE | NO LEAD | WIRE |
端子位置 | BOTTOM | DUAL | BOTTOM | BOTTOM | BOTTOM | BOTTOM | DUAL | BOTTOM |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
最大关闭时间(toff) | 10000 ns | 10000 ns | 10000 ns | 10000 ns | 10000 ns | 10000 ns | 10000 ns | 10000 ns |
最大开启时间(吨) | 1000 ns | 1000 ns | 1000 ns | 1000 ns | 1000 ns | 1000 ns | 1000 ns | 1000 ns |
是否Rohs认证 | 不符合 | 符合 | 不符合 | - | - | 不符合 | 符合 | 不符合 |
针数 | 2 | 3 | 2 | - | - | 2 | 3 | 3 |
外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR | - | - | COLLECTOR | COLLECTOR | COLLECTOR |
JEDEC-95代码 | TO-205AD | - | TO-205AD | TO-205AD | TO-205AD | TO-205AD | - | TO-5 |
认证状态 | Qualified | Qualified | Qualified | - | - | Qualified | Qualified | Qualified |
参考标准 | MIL-19500; RH - 50K Rad(Si) | MIL-19500; RH - 100K Rad(Si) | MIL-19500; RH - 100K Rad(Si) | - | - | MIL-19500; RH - 10K Rad(Si) | MIL-19500; RH - 100K Rad(Si) | MIL-19500; RH - 100K Rad(Si) |
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