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SS22LRVG

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 30V V(RRM), Silicon, GREEN, PLASTIC, SUB SMA, 2 PIN
产品类别分立半导体    二极管   
文件大小203KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
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SS22LRVG概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 30V V(RRM), Silicon, GREEN, PLASTIC, SUB SMA, 2 PIN

SS22LRVG规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明GREEN, PLASTIC, SUB SMA, 2 PIN
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性LOW POWER LOSS
应用EFFICIENCY
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.5 V
JESD-30 代码R-PDSO-F2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流50 A
元件数量1
相数1
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
最大输出电流2 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
最大重复峰值反向电压30 V
最大反向电流400 µA
表面贴装YES
技术SCHOTTKY
端子面层Matte Tin (Sn)
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

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SS22L thru SS215L
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Schottky Barrier Rectifier
MECHANICAL DATA
Case:
Sub SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 2A
Maximum reverse current @ rated VR T
J
=25
T
J
=100
T
J
=125
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
0.50
0.4
I
R
dV/dt
R
θJL
R
θJA
T
J
T
STG
- 55 to +125
- 55 to +150
15
-
10
-
10000
17
75
- 55 to +150
SYMBOL
SS
22L
22L
20
14
20
SS
23L
23L
30
21
30
SS
24L
24L
40
28
40
SS
25L
25L
50
35
50
2
50
0.70
0.85
0.1
-
5
V/μs
O
SS
26L
26L
60
42
60
SS
29L
29L
90
63
90
SS
20L
100
70
100
SS
2AL
150
105
150
210L 215L
UNIT
V
V
V
A
A
0.95
V
mA
C/W
O
O
C
C
Document Number: DS_D1308031
Version: L13

 
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