SGP20N60RUF
September 2000
IGBT
SGP20N60RUF
Short Circuit Rated IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUF
series provides low conduction and switching losses as well
as short circuit ruggedness. RUF series is designed for the
applications such as motor control, UPS and general
inverters where short-circuit ruggedness is required.
Features
•
•
•
•
Short Circuit rated 10us @ T
C
= 100°C, V
GE
= 15V
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.2 V @ I
C
= 20A
High Input Impedance
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
C
G
G C E
TO-220
T
C
= 25°C unless otherwise noted
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
T
SC
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGP20N60RUF
600
±
20
32
20
60
10
195
75
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
us
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
0.64
62.5
Units
°C/W
°C/W
©2000 Fairchild Semiconductor International
SGP20N60RUF Rev. A
SGP20N60RUF
Electrical Characteristics of IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 20mA, V
CE
= V
GE
I
C
= 20A
,
V
GE
= 15V
I
C
= 32A
,
V
GE
= 15V
5.0
--
--
6.0
2.2
2.5
8.5
2.8
--
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
1323
254
47
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
sc
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
10
--
--
--
--
30
49
48
152
524
473
997
30
51
52
311
568
1031
1599
--
55
10
25
7.5
--
--
70
200
--
--
1400
--
--
75
400
--
--
2240
--
80
15
40
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
us
nC
nC
nC
nH
V
CC
= 300 V, I
C
= 20A,
R
G
= 10Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
V
CC
= 300 V, I
C
= 20A,
R
G
= 10Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
@
T
C
=
V
CC
= 300 V, V
GE
= 15V
100°C
V
CE
= 300 V, I
C
= 20A,
V
GE
= 15V
Measured 5mm from PKG
©2000 Fairchild Semiconductor International
SGP20N60RUF Rev. A
SGP20N60RUF
60
Common Emitter
T
C
= 25℃
50
12V
20V
15V
60
Common Emitter
V
GE
= 15V
T
C
= 25℃
━━
T
C
= 125℃ ------
50
Collector Current, I
C
[A]
40
Collector Current, I
C
[A]
8
40
30
V
GE
= 10V
20
30
20
10
10
0
0
2
4
6
0
1
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
5
28
Common Emitter
V
GE
= 15V
Collector - Emitter Voltage, V
CE
[V]
V
CC
= 300V
Load Current : peak of square wave
24
40A
4
3
30A
20A
Load Current [A]
20
16
2
12
I
C
= 10A
8
1
4
0
-50
0
50
100
150
Duty cycle : 50%
T
C
= 100℃
Power Dissipation = 32W
0.1
1
10
100
1000
0
Case Temperature, T
C
[℃]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25℃
20
Common Emitter
T
C
= 125℃
Collector - Emitter Voltage, V [V]
CE
16
Collector - Emitter Voltage, V
CE
[V]
16
12
12
8
8
40A
4
I
C
= 10A
0
20A
40A
4
I
C
= 10A
0
0
4
8
12
16
20
20A
0
4
8
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2000 Fairchild Semiconductor International
Fig 6. Saturation Voltage vs. V
GE
SGP20N60RUF Rev. A
SGP20N60RUF
2400
2000
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
Capacitance [pF]
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25℃
━━
T
C
= 125℃ ------
Ton
1600
Coes
1200
Switching Time [ns]
100
Tr
800
Cres
400
0
1
10
10
1
10
100
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Switching Time [ns]
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25℃
━━
T
C
= 125℃ ------
Eoff
Switching Loss [uJ]
1000
Eon
Toff
Tf
Toff
Eoff
Tf
100
100
1
10
100
1
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25℃
━━
T
C
= 125℃ ------
10
100
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V
GE
=
±
15V, R
G
= 10
Ω
T
C
= 25℃
━━
T
C
= 125℃ ------
Ton
Switching Time [ns]
100
Tr
Switching Time [ns]
Toff
Tf
Toff
Tf
100
Common Emitter
V
GE
=
±
15V, R
G
= 10
Ω
T
C
= 25℃
━━
T
C
= 125℃ ------
10
15
20
25
30
35
40
10
10
15
20
25
30
35
40
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2000 Fairchild Semiconductor International
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGP20N60RUF Rev. A
SGP20N60RUF
15
Common Emitter
V
GE
=
±
15V, R
G
= 10
Ω
T
C
= 25℃
━━
T
C
= 125℃ ------
Common Emitter
R
L
= 15
Ω
T
C
= 25℃
V
CC
= 100 V
9
300 V
200 V
Eoff
1000
Eon
Eoff
Gate - Emitter Voltage, V [ V ]
GE
12
Switching Loss [uJ]
6
3
100
10
15
20
25
30
35
40
0
0
10
20
30
40
50
60
Collector Current, I
C
[A]
Gate Charge, Q
g
[ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100
I
C
MAX. (Pulsed)
50㎲
I
C
MAX. (Continuous)
100㎲
100
Collector Current, I
C
[A]
10
DC Operation
Collector Current, I
C
[A]
1㎳
10
1
Single Nonrepetitive
Pulse T
C
= 25℃
Curves must be derated
linearly with increase
in temperature
0.3
1
10
100
1000
Safe Operating Area
V
GE
= 20V, T
C
= 100℃
1
1
10
100
1000
0.1
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Thermal Response, Zthjc [
℃
/W]
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
Pdm
t1
t2
single pulse
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
1E-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2000 Fairchild Semiconductor International
SGP20N60RUF Rev. A
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