www.fairchildsemi.com
RC4227
Dual Precision Operational Amplifier
Features
• Very low noise
Spectral noise density – 3.8 nV/ÖHz
1/F noise corner frequency – 2.7 Hz
• Very low VOS drift – 0.3
mV/Mo;
0.3
mV/˚C
• High gain – 500 V/mV
• High output drive capability –
±10V
into 1K load
• High slew rate – 2.7 V/mS
•
•
•
•
•
•
•
Wide gain bandwidth product – 8 MHz
High common mode rejection ratio – 104 dB
Low input offset voltage – 75
mV
Low frequency noise – 0.08
mV
p-p
(0.1 Hz to 10 Hz)
Low input offset current – 2.5 nA
Industry standard pinout
8-Lead DIP
Description
The RC4227, a dual version of the OP-27, is designed for
instrumentation grade signal conditioning where low noise
(both spectral density and burst), wide bandwidth, and high
slew rate are required along with low input offset voltage,
low input offset temperature coefficient, and low input bias
currents. These features are all available in a device which is
internally compensated for excellent phase margin (70˚) in a
unity gain configuration. Digital nulling techniques
performed at wafer sort make it feasible to guarantee temper-
ature stable input offset voltages as low as 75
mV
max.
Input bias current cancellation techniques are used to obtain
±45
nA max. input bias currents.
In addition to providing superior performance for audio fre-
quency range applications, the RC4227 design uniquely
addresses the needs of the instrumentation designer.
Power supply rejection and common mode rejection are both
in excess of 100 dB. A phase margin of 70˚ at unity gain
guards against peaking (and ringing) in low gain feedback
circuits. Stable operation can be obtained with capacitive
loads up to 2000 pF
1
. The drift performance is, in fact, so
good that the system designer must be cautioned that stray
thermoelectric voltages generated by dissimilar metals at the
contacts to the input terminals are enough to degrade its per-
formance. For this reason it is also important to keep both
input terminals at the same relative temperature.
The performance of the RC4227 is achieved using precision
amplifier design techniques coupled with a process that
combines nitride transistors and capacitors with precision
thin-film resistors. The die size savings of nitride capacitors
and thin film resistors allow the RC4227 to be offered in an
8-pin mini-dip package and fit the industry standard dual op
amp pinout.
Note:
1. By decoupling the load capacitance with a series resistor
of 50W or more, load capacitances larger than 2000 pF can
be accommodated.
Block Diagram
Output A
–Input A
+VS
Output B
A
+Input A
–VS
B
–Input B
+Input B
65-3468-01
Rev. 1.0.0
PRODUCT SPECIFICATION
RC4227
Absolute Maximum Ratings
(beyond which the device may be damaged)1
Parameter
Supply Voltage
Input Voltage
2
Differential Input Voltage
Internal Power Dissipation
3
P
D
T
A
< 50°C
Output Short Circuit Duration
Junction Temperature
Storage Temperature
Operating Temperature
Lead Soldering Temperature (60 sec)
For T
A
> 50°C Derate at
PDIP
CerDIP
6.25
8.33
RM4227B
RC4227F/G
PDIP
CerDIP
-65
-55
0
PDIP
CerDIP
Min
Typ
Max
±18
±18
0.7
658
468
833
Indefinite
125
175
150
125
70
300
°C
mW/°C
°C
°C
°C
Units
V
V
V
mW
mW
Notes:
1. Functional operation under any of these conditions is NOT implied. Performance and reliability are guaranteed only if
Operating Conditions are not exceeded.
2. For supply voltages less than
±18V,
the absolute maximum input voltage is equal to the supply voltage.
3. Observe package thermal characteristics.
Operating Conditions
Parameter
q
JC
q
JA
Thermal resistance
Thermal resistance
CerDIP
PDIP
CerDIP
Min
Typ
45
160
150
Max
Units
°C/W
°C/W
°C/W
2
RC4227
PRODUCT SPECIFICATION
Electrical Characteristics
(V
S
=
±15V,
and T
A
£
+25°C unless otherwise noted)
4227B/F
Parameters
Input Offset Voltage
3
Long Term V
OS
Stability
1
Input Offset Current
Input Bias Current
Input Noise Voltage
Input Noise Voltage Density
0.1 Hz to 10 Hz
F
O
= 10 Hz
F
O
= 30 Hz
F
O
= 1000 Hz
Input Noise Current Density
F
O
= 10 Hz
F
O
= 30 Hz
F
O
= 1000 Hz
Input Resistance (Diff. Mode)
Input Resistance (Com. Mode)
Input Voltage Range
2, 4
Common Mode Rejection
Ratio
Power Supply Rejection Ratio
Large Signal Voltage Gain
V
CM
=
±11V
V
S
=
±4.0V
to
±16.5V
R
L
³
2kW,
V
OUT
=
±10V
V
OUT
=
±10V,
R
L
= 1KW
V
OUT
=
±1.0V
V
S
=
±4.0V,
R
L
³
1.0kW
Output Voltage Swing
Slew Rate
2
Gain Bandwidth Product
Open Loop Output Resistance V
OUT
= 0, I
OUT
= 0
Power Consumption
Crosstalk
R
L
=
¥
126
R
L
³
2.0kW
R
L
³
1kW
R
L
³
2.0kW
±11
104
104
500
400
250
±12
±11
1.5
5.0
Test Conditions
Min
Typ
20
0.3
±2.5
±5
0.08
3.8
3.3
3.2
1.7
1.0
0.4
5.0
2.5
±12.3
123
120
1000
800
500
±13.8
±12
2.7
8.0
70
160
155
200
126
±11
100
100
400
300
200
±12
±11
0.1
5.0
±10
±15
Max
150
Min
4227G
Typ
30
0.4
±5
±7.5
0.08
3.8
3.3
3.2
1.7
1.0
0.4
4.0
2.0
±12.3
120
118
800
600
400
±13.8
±12
0.3
8.0
70
180
155
240
V/ms
MHz
W
mW
dB
V
MW
GW
V
dB
dB
V/mV
pA
-----------
Hz
Max
180
±15
±25
Units
mV
mV/Mo
nA
nA
mV
p-p
nV
-----------
Hz
Notes:
1. Long Term Input Offset Voltage Stability refers to the averaged trend line of VOS vs. Time over extended periods after the
first 30 days of operation. Excluding the initial hour of operation, changes in VOS during the first 30 operating days are
typically 2.5
mV.
2. Guaranteed by design.
3. Input Offset Voltage measurements are performed by automated test equipment approximately 0.5 seconds after application
of power.
4. The input protection diodes do not allow the device to be removed or inserted into the circuit without first removing power.
3
PRODUCT SPECIFICATION
RC4227
Electrical Characteristics
(V
S
=
±15V,
-55˚C
£
T
A
£
+125˚C unless otherwise noted)
4227B
Parameters
Input Offset Voltage
1
Average Input Offset Voltage Drift
2
Input Offset Current
Input Bias Current
Input Voltage Range
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Large Signal Voltage Gain
Output Voltage Swing
Power Consumption
V
CM
=
±10V
V
S
=
±4.0V
to
±16.5V
R
L
³
2 kW, V
OUT
=
±10V
R
L
³
2.0 kW
R
L
=
¥
±10
100
100
350
±11
Test Conditions
Min
Typ
120
0.3
±10
±15
±11.5
119
114
650
±13.2
200
280
Max
400
3.5
±35
±45
Units
mV
mV/˚C
nA
nA
V
dB
dB
V/mV
V
mW
Notes:
1. Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application
of power.
2. This parameter is tested on a sample basis only.
Electrical Characteristics
(V
S
=
±15V,
0°C
£
T
A
£
+70˚C unless otherwise noted)
4227F
Parameters
Input Offset Voltage
Average Input Offset
Voltage Drift
2
Input Offset Current
Input Bias Current
Input Voltage Range
Common Mode Rejection
Ratio
Power Supply Rejection
Ratio
Large Signal Voltage Gain
Output Voltage Swing
Power Consumption
V
CM
=
±10V
V
S
=
±4.0V
to
±16.5V
R
L
> 2.0kW,
V
OUT
=
±10V
R
L
> 2.0kW
R
L
=
¥
±10
100
100
350
±11
Test Conditions
Min
Typ
45
0.3
±8
±10
±11.8
121
116
700
±13.5
180
240
Max
150
1.3
±15
±30
±10
92
92
250
±11
200
Min
4227G
Typ
85
0.4
±10
±15
±11.8
118
114
500
±13.5
280
±35
±45
Max
250
Units
mV
mV/°C
nA
nA
V
dB
dB
V/mV
V
mW
4
RC4227
PRODUCT SPECIFICATION
Typical Performance Characteristics
0.1
µF
100K
10½
2
1/2
4227
D.U.T
1
2K
3
OP-07
4.7
µF
2
100K
2.2
µF
110K
6
4.3K
22
µF
Scope
x1
R
IN
= 1M
3
24.3K
0.1
µ
F
Notes:
1. Peak-to-peak noise measured in a 10-second interval.
2. The device under test should be warmed up for 3 minutes and shielded from air currents.
3. Voltage gain = 50,000.
65-3469-01
Figure 1. 0.1 Hz to 10 Hz Noise Test Circuit (1/2 Shown)
100
90
80
130
110
90
A
V
(dB)
Test Time of 10 Sec Further
Limits Low Frequency (<0.1 Hz)
Gain
65-0004
A
V
(dB)
70
60
50
40
30
0.01
0.1
1.0
10
70
50
30
10
-10
1
10
100
1K
10K 100K
1M
65-0005
10M 100M
100
F (Hz)
Figure 2. 0.1Hz to 10Hz Noise Gain vs. Frequency
F (Hz)
Figure 3. Open Loop Gain vs. Frequency
25
20
16
A
V
FM
(Deg)
f
80
V
S
= 15V
T
A
= +25 C
FM
= 70
100
120
70
60
10
f
M
GBW
V
S
= +15V
9
10
5
0
-5
140
160
180
200
220
50
4
8
SR (V/
m
S)
3
2
-75
7
SL
6
-50
-25
0
25
50
75
100
125
-10
1
10
100
F (MHz)
65-0006
T
A
(¡C)
65-0007
Figure 4. Gain, Phase Shift vs. Frequency
Figure 5. Slew Rate, Gain Bandwidth Product,
Phase Margin vs. Temperature
GBW (MHz)
A
V
(dB)
FM
(Deg)
5
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