DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD16818
MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT
DESCRIPTION
The
µ
PD16818 is a monolithic dual H bridge driver IC which uses N-channel power MOS FETs in its output stage. By
employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage and
power consumption as compared with conventional driver circuits that use bipolar transistors.
In addition, the drive current can be adjusted by an external resistor in power-saving mode.
The
µ
PD16818 is therefore ideal as the driver circuit of a 2-phase excitation, bipolar-driven stepping motor for the head
actuator of an FDD.
FEATURES
• Compatible with 3V-/5V- supply voltage
• Pin compatible with
µ
PD16803
• Low ON resistance (sum of ON resistors of top and bottom MOS FETs)
R
ON1
= 1.2
Ω
(V
M
= 3.0 V)
R
ON2
= 1.0
Ω
(V
M
= 5.0 V)
• Low current consumption: I
DD
= 0.4 mA TYP. (V
DD
= 2.7 V to 3.6 V)
• Stop mode function that turns OFF all output MOS FETs
• Drive current can be set in power-saving mode (set by external resistor)
• Compact surface mount package
ORDERING INFORMATION
Part Number
Package
20-pin plastic SOP (300 mil)
20-pin plastic SSOP (225 mil)
µ
PD16818GS
µ
PD16818GR-8JG
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Supply voltage
Motor block
Control block
Power
consumption
Symbol
V
M
V
DD
P
D1
P
D2
Condition
Rating
–0.5 to +7.0
–0.5 to +7.0
1.0
Note 1
1.25
Note 2
0.79
Note 2
PW
≤
5 ms, Duty
≤
40 %
±1.0
Note 2
–0.5 to V
DD
+ 0.5
0 to 60
150
–55 to +150
A
V
°C
°C
°C
W
Unit
V
µ
PD16818GS
µ
PD16818GR-8JG
P
D2S
I
D (pulse)
V
IN
T
A
T
J (MAX)
T
stg
Instantaneous H bridge drive current
Input voltage
Operating temperature range
Operation junction temperature
Storage temperature range
Notes 1.
IC only
2.
When mounted on a glass epoxy printed circuit board (100 mm
×
100 mm
×
1 mm)
The information in this document is subject to change without notice.
Document No. S11365EJ2V0DS00 (2nd edition)
Date Published December 1997 N
Printed in Japan
©
1997
µ
PD16818
RECOMMENDED OPERAING CONDITIONS
Parameter
Supply voltage
Motor block
Control block
Rx pin connection resistance
H bridge drive current
(V
DD
= V
M
= 3 V)
Note
Symbol
V
M
V
DD
R
X
MIN.
2.7
2.7
2
430
340
5
0
20
60
nF
°C
TYP.
MAX.
6.0
6.0
kΩ
mA
Unit
V
µ
PD16818GS
µ
PD16818GR-8JG
I
DR
I
DRS
C
1
-C
3
T
A
Charge pump capacitor capacitance
Operating temperature
Note
When mounted on a glass epoxy printed circuit board (100 mm
×
100 mm
×
1 mm)
ELECTRICAL SPECIFICATIONS (Within recommended operating conditions unless otherwise specified)
V
DD
= V
M
= 4.0 V to 6.0 V
Parameter
OFF V
M
pin current
Symbol
I
M
Conditions
INC pin low
V
M
= V
DD
= 6 V
Note 1
T
A
= 25
°C,
V
IN
= V
DD
0
≤
T
A
≤
60
°C,
V
IN
= V
DD
I
IL1
T
A
= 25
°C,
V
IN
= 0
0
≤
T
A
≤
60
°C,
V
IN
= 0
I
IH2
T
A
= 25
°C,
V
IN
= V
DD
0
≤
T
A
≤
60
°C,
V
IN
= V
DD
PS pin low-level input voltage
I
IL2
T
A
= 25
°C,
V
IN
= 0
0
≤
T
A
≤
60
°C,
V
IN
= 0
Input pull-up resistance
(IN
1
, IN
2
, INC)
PS pin input pull-down resistance
R
IND
R
INU
T
A
= 25
°C
0
≤
T
A
≤
60
°C
T
A
= 25
°C
0
≤
T
A
≤
60
°C
Control pin high-level input voltage
Control pin low-level input voltage
H bridge ON resistance
Note 2
R
ON
relative accuracy
V
IH
V
IL
R
ON2
V
DD
= V
M
= 5 V
Excitation direction <1>, <3>
Excitation direction <2>, <4>
Note 3
Charge pump circuit turn ON time
H bridge turn ON time
H bridge turn OFF time
t
ONG
t
ONH
t
OFFH
V
DD
= V
M
= 5 V
C
1
= C
2
= C
3
= 10nF
R
M
= 20
Ω
0.3
35
25
35
25
3.0
–0.3
1.0
50
50
1.0
MIN.
TYP.
MAX.
1.0
Unit
µ
A
mA
V
DD
pin current
High-level input current
(IN
1
, IN
2
, INC)
Low-level input current
(IN
1
, IN
2
, INC)
PS pin high-level input current
I
DD
I
IH1
2.0
1.0
2.0
–0.15
–0.2
0.15
0.2
–1.0
–2.0
65
75
65
75
V
DD
+ 0.3
0.8
2.0
±15
±5
2.0
2.0
5.0
µ
A
mA
mA
µ
A
kΩ
kΩ
V
V
Ω
%
∆
R
ON
ms
µ
s
µ
s
Notes 1.
When IN
1
= IN
2
= INC = “H”, PS = “L”
2.
Sum of ON resistances of top and bottom MOS FETs
3.
For the excitation direction, refer to
FUNCTION TABLE.
2
µ
PD16818
ELECTRICAL SPECIFICATIONS (Within recommended operating conditions unless otherwise specified)
V
DD
= V
M
= 2.7 V to 3.6 V
Parameter
OFF V
M
pin current
Symbol
I
M
INC pin low
V
M
= V
DD
= 3.6 V
V
DD
pin current
High-level input current
(IN
1
, IN
2
, INC)
Low-level input current
(IN
1
, IN
2
, INC)
PS pin high-level input current
I
IH2
I
IL1
I
DD
I
IH1
Note 1
T
A
= 25
°C,
V
IN
= V
DD
0
≤
T
A
≤
60
°C,
V
IN
= V
DD
T
A
= 25
°C,
V
IN
= 0
0
≤
T
A
≤
60
°C,
V
IN
= 0
T
A
= 25
°C,
V
IN
= V
DD
0
≤
T
A
≤
60
°C,
V
IN
= V
DD
PS pin low-level input voltage
I
IL2
T
A
= 25
°C,
V
IN
= 0
0
≤
T
A
≤
60
°C,
V
IN
= 0
Input pull-up resistance
(IN
1
, IN
2
, INC)
PS pin input pull-down resistance
R
IND
R
INU
T
A
= 25
°C
0
≤
T
A
≤
60
°C
T
A
= 25
°C
0
≤
T
A
≤
60
°C
Control pin high-level input voltage
Control pin low-level input voltage
H bridge ON resistance
Note 2
R
ON
relative accuracy
V
IH
V
IL
R
ON1
V
DD
= V
M
= 3 V
Excitation direction <1>, <3>
Excitation direction <2>, <4>
Note 3
Vx voltage in power-saving
mode
Note 4
Vx relative accuracy in power-
saving mode
Charge pump circuit turn ON time
H bridge turn ON time
H bridge turn OFF time
t
ONG
t
ONH
t
OFFH
V
X
V
DD
= V
M
= 3 V
R
X
= 270 kΩ
Excitation direction <1>, <3>
Excitation direction <2>, <4>
V
DD
= V
M
= 3 V
C
1
= C
2
= C
3
= 10nF
R
M
= 20
Ω
0.3
1.0
1.2
35
25
35
25
2.0
–0.3
1.2
50
50
0.4
1.0
1.0
2.0
–0.09
–0.12
0.09
0.12
–1.0
–2.0
65
75
65
75
V
DD
+ 0.3
0.8
2.4
±15
±5
1.4
±5
±5
2.0
2.0
5.0
ms
V
V
V
Ω
%
kΩ
kΩ
mA
mA
mA
Conditions
MIN.
TYP.
MAX.
1.0
Unit
µ
A
µ
A
µ
A
∆
R
ON
∆
V
X
%
µ
s
µ
s
Notes 1.
When IN
1
= IN
2
= INC = “H”, PS = “L”
2.
Sum of ON resistances of top and bottom MOS FETs
3.
For the excitation direction, refer to
FUNCTION TABLE.
4.
Vx is a voltage at point A (FORWARD) or B (REVERSE) of the H bridge in FUNCTION TABLE.
3
µ
PD16818
PIN CONFIGURATION (Top View)
20-pin plastic SOP (300 mil)
20-pin plastic SSOP (225 mil)
C1H
C2L
V
M1
1A
PGND
2A
V
DD
IN
1
IN
2
INC
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
C1L
C2H
V
G
1B
PGND
2B
V
M2
R
X
PS
DGND
FUNCTION TABLE
H
1
F
Excitation Direction
<1>
<2>
<3>
<4>
–
F: FORWARD
R: REVERSE
IN
C
H
H
H
H
L
IN
1
H
L
L
H
×
IN
2
H
H
L
L
×
H
1
F
R
F
R
Stop
H
2
F
F
R
R
<4>
<1>
H
2
R
H
2
F
<3>
H
1
R
<2>
FORWARD
V
M
REVERSE
V
M
STOP
V
M
ON
OFF
OFF
ON
OFF
OFF
A
B
A
B
A
B
OFF
ON
ON
OFF
OFF
OFF
4
µ
PD16818
BLOCK DIAGRAM
0.01
µ
F
V
DD
C1L
C1H C2L
0.01
µ
F
C2H
V
G
0.01
µ
F
OSC
CIRCUIT
CHARGE
PUMP
V
M1
V
M
R
X
BAND GAP
REFERENCE
LEVEL CONTROL
CIRCUIT
“H”
BRIDGE 1
SWITCH
CIRCUIT
1A
1B
PGND
V
M2
Note
PS
50 kΩ
50 kΩ
50 kΩ
50 kΩ
IN
1
IN
2
INC
DGND
CONTROL
CIRCUIT
LEVEL
SHIFT
2A
“H”
BRIDGE 2
2B
PGND
Note
The power-saving mode is set when the PS pin goes high. In this mode, the voltage of the charge pump circuit
is lowered and the ON resistance of the H bridge driver transistor increases, limiting the current.
Remark
is connected in diffusion layer.
5
PCB设计
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