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“Standard”:
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ
PA2803
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
The
μ
PA2803 is N-channel MOSFET designed for DC/DC converter and power
management applications of portable equipments.
PACKAGE DRAWING (Unit: mm)
0.65
1
2
3
FEATURES
R
DS(on)1
= 5.8 mΩ MAX. (V
GS
= 4.5 V, I
D
= 20 A)
R
DS(on)2
= 9.5 mΩ MAX. (V
GS
= 2.5 V, I
D
= 10 A)
•
Built-in gate protection diode
•
Thin type surface mount package with heat spreader
•
RoHS Compliant
0.32±0.05
•
Low on-state resistance
4
3.3±0.15
8
7
6
5
3.3±0.15
3.15±0.1
0.10 S
0.22±0.05
0.10 M
0.2
0.35
0
+0.05
–0
3.0±0.1
0.9±0.05
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
±12
±20
±80
1.5
3.8
150
−55
to
+150
20
40
V
V
A
A
W
W
°C
°C
A
mJ
0.4±0.1
2.34±0.1
ABSOLUTE
connected.)
MAXIMUM
RATINGS (T
A
= 25°C, All terminals are
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
0.4±0.1
1.75±0.1
Total Power Dissipation
Channel Temperature
Storage Temperature
Total Power Dissipation (PW = 10 sec)
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
I
AS
E
AS
EQUIVALENT CIRCUIT
Drain
THERMAL RESISTANCE
Channel to Ambient Thermal Resistance
Note2
R
th(ch-A)
R
th(ch-C)
83.3
2.4
°C/W
°C/W
Gate
Body
Diode
Channel to Case (Drain) Thermal Resistance
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
Gate
Protection
Diode
Source
2.
Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
3.
Starting T
ch
= 25°C, V
DD
= 10 V, R
G
= 25
Ω,
V
GS
= 12
→
0 V, L = 100
μ
H
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19569EJ1V0DS00 (1st edition)
Date Published December 2008 NS
Printed in Japan
2008
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