S E M I C O N D U C T O R
SGT27B27,
SGT27B27A, SGT27B27B
Bidirectional Transient Surge Suppressors
(SURGECTOR™)
Features
• Clamping Voltage . . . . . 230V or 270V
March 1995
Applications
• Data and Communication Links
• Computer Modems
• Alarm Systems
MT2
MT1
• Peak Transient Surge Current. . .600A
• Minimum Holding Current . . . 270mA
• Continuous Protection
MT2
• Low On-State Voltage
• UL Recognized File #E135010 to
STD 497B
MODIFIED TO-202
Description
These SURGECTOR devices are designed to protect telecom-
munication equipment, data links, alarm systems, power sup-
plies and other sensitive electrical circuits from damage by
switching transients, lightning strikes, load changes, commuta-
tion spikes and line crosses.
Bidirectional SURGECTOR devices are constructed using two
monolithic compound chips each consisting of a thyristor whose
gate region contains a special diffused section which acts as a
zener diode. This chips are connected in anti parallel, providing
bidirectional protection. This zener diode section permits anode
voltage turn on of the structure.
Initial clamping by the zener diode section, and fast turn on
by the thyristor, provide excellent voltage limiting even on
very fast rise time transients. The thyristor also features very
high holding current, which allows the SURGECTOR to
recover to its high impedance off state after a transient.
All these devices are supplied in a 2 lead, modified TO-202
VERSATAB package.
Absolute Maximum Ratings
T
C
= +25
o
C
SGT27B27, SGT27B27A
SGT27B27B
Continuous Off State Voltage:
V
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
RM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transient Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TSM
1µs x 2µs (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8µs x 20µs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10µs x 560µs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10µs x 1000µs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
One Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50Hz to 60Hz (Note 2)
One Second . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50Hz to 60Hz, Halfwave
Operating Temperature (T
A
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NOTES:
1. Unit designed not to fail open below: 900A.
2. One every 30s maximum.
235
235
600
400
250
200
60
30
-40
o
C to +85
o
C
-40
o
C to +150
o
C
UNITS
V
V
A
A
A
A
A
A
o
C
o
C
Equivalent Schematic Symbols
MT2
MT2
MT2
MT1
SURGECTOR™ is a trademark of Harris Semiconductor
MT1
MT1
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright
©
Harris Corporation 1995
File Number
3603.1
8-14
Specifications SGT27B27, SGT27B27A, SGT27B27B
Electrical Specifications
PARAMETER
Off-State Current
At Case Temperature, T
C
= +25
o
C, Unless Otherwise Specified
TEST
CONDITIONS
Maximum Rated V
DM
, V
RM
T
A
= +25
o
C
T
A
= +85
o
C
I
Z
< 200µA
270
270
270
V
BO
dv/dt = 100V/µs
-
-
-
I
H
V
T
C
O
I
T
= 10A
V
DM
= V
RM
= 50V,
Frequency = 1MHz
270
-
-
-
-
-
-
-
80
345
360
375
-
2
-
V
V
V
mA
V
pF
-
-
-
325
340
355
V
V
V
LIMITS
MIN
-
-
TYP
-
-
MAX
200
100
UNITS
nA
µA
SYMBOL
I
DM
, I
RM
Clamping Voltage
SGT27B27
SGT27B27A
SGT27B27B
Breakover Voltage
SGT27B27
SGT27B27A
SGT27B27B
Holding Current
On-State Voltage
Main Terminal Capacitance
V
Z
Terms and Symbols
V
DM
(Maximum Off-State Voltage) - Maximum off-state volt-
age (DC or peak) which may be applied continuously.
V
RM
(Maximum Reverse Voltage) - Maximum reverse-block-
ing voltage (DC or peak) which may be applied.
I
TSM
(Maximum Peak Surge Current) - Maximum nonrepeti-
tive current which may be allowed to flow for the time state.
T
A
(Ambient Operating Temperature) - Ambient temperature
range permitted during operation in a circuit.
T
STG
(Storage Temperature) - Temperature range permitted
during storage.
I
DM
(Off-State Current) - Maximum value of off-state current
that results from the application of the maximum off-state
voltage (V
DM
).
I
RM
(Reverse Current) - Maximum value of reverse current
that results from the application of the maximum reverse
voltage (V
RM
).
V
Z
(Clamping Voltage) - off-state voltage at a specified cur-
rent.
V
OB
(Breakdown Voltage) - voltage at which the device
switches from the off-state to the on-state.
I
H
(Holding Current) - Minimum on-state current that will hold
the device in the on-state after it has been latched on.
V
T
(On-State Voltage) - Voltage across the main terminals
for a specified on-state current.
C
O
(Main Terminal Capacitance) - Capacitance between the
main terminals at a specified off-state voltage.
8-15
SGT27B27, SGT27B27A, SGT27B27B
Performance Curves
A
V
T
300
270
240
I
T
I
H
V
BO
mA
CAPACITANCE (pF)
210
150
120
90
60
30
I
DM
V
V
DM
V
Z
0
0
20
40
60
80
100 120
VOLTAGE (V)
140
160
180
200
FIGURE 1. TYPICAL VOLT-AMPERE CHARACTERISTICS FOR
ALL TYPES
1.2
FIGURE 2. TYPICAL CAPACITANCE vs VOLTAGE FOR ALL
TYPES
1.50
NORMALIZED BREAKDOWN VOLTAGE (V)
NORMALIZED ZENER VOLTAGE (V)
1.1
1.25
1
1.00
0.9
0.75
0.8
-40 -30 -20 -10
0.50
0
10 20 30 40 50 60 70
AMBIENT TEMPERATURE (
o
C)
80 90
10
100
1,000
RATE OF RISE OF VOLTAGE (V/µs)
10,000
FIGURE 3. NORMALIZED ZENER VOLTAGE vs
TEMPERATURE FOR ALL TYPES
FIGURE 4. NORMALIZED V
BO
vs dv/dt FOR ALL TYPES
1.7
NORMALIZED HOLDING CURRENT (mA)
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
-40 -30 -20 -10
0
10 20 30 40 50 60
AMBIENT TEMPERATURE (
o
C)
70
80
90
FIGURE 5. NORMALIZED HOLDING CURRENT vs TEMPERATURE FOR ALL TYPES
8-16
SGT27B27, SGT27B27A, SGT27B27B
Packaging
ACTIVE ELEMENT
TO-202 Modified
A
H
1
b
2
2 LEAD JEDEC STYLE TO-202 SHORT TAB PLASTIC PACKAGE
INCHES
SYMBOL
A
MIN
0.130
0.024
0.045
0.270
0.018
0.320
0.340
MAX
0.150
0.028
0.055
0.280
0.022
0.340
0.360
MILLIMETERS
MIN
3.31
0.61
1.15
6.86
0.46
8.13
8.64
MAX
3.81
0.71
1.39
7.11
0.55
8.63
9.14
NOTES
-
2, 3
1, 2, 3
-
1, 2, 3
-
-
4
-
5
-
1
D
b
b
1
b
2
L
1
b
1
c
D
L
b
c
1
2
E
e
1
H
1
J
1
0.200 BSC
0.080
0.039
0.410
0.080
0.100
0.049
0.440
0.100
5.08 BSC
2.04
1.00
10.42
2.04
2.54
1.24
11.17
2.54
J
1
L
L
1
e
1
45
o
E
NOTES:
1. Lead dimension and finish uncontrolled in L
1
.
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
5. Position of lead to be measured 0.100 inches (2.54mm) from bottom
of dimension D.
6. Controlling dimension: Inch.
7. Revision 3 dated 10-94.
8-17
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