CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
SGT27B13
235
235
300
200
125
100
60
30
-40 to 85
-40 to 150
SGT27B27
235
235
600
400
250
200
60
30
-40 to 85
-40 to 150
UNITS
V
V
A
A
A
A
A
A
o
C
o
C
200
200
300
200
125
100
60
30
-40 to 85
-40 to 150
Electrical Specifications
PARAMETER
Off-State Current
At Case Temperature, T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
I
DM
, I
RM
TEST CONDITIONS
Maximum Rated V
DM
, V
RM
T
A
= 25
o
C
T
A
= 85
o
C
I
Z
< 200
µ
A
270
230
270
V
BO
dv/dt = 100V/
µ
s
-
-
-
I
H
270
130
130
V
T
C
O
I
T
= 10A
V
DM
= V
RM
= 50V,
Frequency = 1MHz
-
-
-
-
-
-
-
-
2
mA
mA
mA
V
-
-
-
345
240
345
V
V
V
-
-
-
325
270
325
V
V
V
MIN
TYP
MAX
UNITS
-
-
-
-
200
100
nA
µ
A
Clamping Voltage
SGT27B27
SGT23B13
SGT27B13
Breakover Voltage
SGT27B27
SGT23B13
SGT27B13
Holding Current
SGT27B27
SGT23B13
SGT27B13
On-State Voltage
Main Terminal Capacitance
SGT27B27
SGT23B13
SGT27B13
V
Z
-
-
-
80
50
50
-
-
-
pF
pF
pF
7-12
SGT23B13, SGT27B13, SGT27B27
Performance Curves
A
V
T
190
170
150
I
T
I
H
V
BO
mA
CAPACITANCE (pF)
130
110
90
70
50
30
I
DM
V
V
DM
V
Z
10
0
20
40
60
80
100
120
140
160
180
200
VOLTAGE (V)
FIGURE 1. TYPICAL VOLT-AMPERE CHARACTERISTICS
FOR ALL TYPES
FIGURE 2. TYPICAL CAPACITANCE vs VOLTAGE FOR
SGT23B13 AND SGT27B13
1.2
300
270
CAPACITANCE (pF)
240
210
150
120
90
60
30
0
0
20
40
60
80
100
120
140
160
180
200
NORMALIZED ZENER VOLTAGE (V)
1.1
1
0.9
0.8
-40 -30 -20 -10
VOLTAGE (V)
0
10
20
30
40
50
60
70
80
90
AMBIENT TEMPERATURE (
o
C)
FIGURE 3. TYPICAL CAPACITANCE vs VOLTAGE FOR
SGT27B27
FIGURE 4. NORMALIZED ZENER VOLTAGE vs
TEMPERATURE FOR ALL TYPES
NORMALIZED BREAKDOWN VOLTAGE (V)
1.50
NORMALIZED HOLDING CURRENT (mA)
10
100
1,000
10,000
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
-40 -30 -20 -10
0
10
20
30
40
50
60
70
80
90
1.25
1.00
0.75
0.50
RATE OF RISE OF VOLTAGE (V/µs)
AMBIENT TEMPERATURE (
o
C)
FIGURE 5. NORMALIZED V
BO
vs dv/dt FOR ALL TYPES
FIGURE 6. NORMALIZED HOLDING CURRENT vs
TEMPERATURE FOR ALL TYPES
7-13
SGT23B13, SGT27B13, SGT27B27
Mechanical Dimensions
ACTIVE ELEMENT
TO-202
Modified
2 LEAD JEDEC STYLE TO-202 SHORT TAB PLASTIC PACKAGE
INCHES
MILLIMETERS
MIN
3.31
0.61
1.15
6.86
0.46
8.13
8.64
2.04
1.00
10.42
2.04
MAX
3.81
0.71
1.39
7.11
0.55
8.63
9.14
2.54
1.24
11.17
2.54
NOTES
-
2, 3
1, 2, 3
-
1, 2, 3
-
-
4
-
5
-
1
A
b
2
H
1
D
SYMBOL
A
b
b
1
b
2
c
D
MIN
0.130
0.024
0.045
0.270
0.018
0.320
0.340
0.080
0.039
0.410
0.080
MAX
0.150
0.028
0.055
0.280
0.022
0.340
0.360
0.100
0.049
0.440
0.100
L
1
b
1
E
e
1
H
1
c
J
1
L
L
1
J
1
0.200 BSC
5.08 BSC
L
b
1
2
NOTES:
1. Lead dimension and finish uncontrolled in L
1
.
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
5. Position of lead to be measured 0.100 inches (2.54mm) from bottom
of dimension D.
6. Controlling dimension: Inch.
7. Revision 3 dated 10-94.
e
1
45
o
E
Ordering Information
SGT
27
B
27
Holding Current in mA divided by 10
Type of Surgector
U: Unidirectional
B: Bidirectional
S: SCR
Off-State Voltage Rating Divided by 10
Surgector
Terms and Symbols
V
DM
(Maximum Off-State Voltage) -
Maximum off-state
voltage (DC or peak) which may be applied continuously.
V
RM
(Maximum Reverse Voltage) -
Maximum reverse-
blocking voltage (DC or peak) which may be applied.
I
TSM
(Maximum Peak Surge Current) -
Maximum
nonrepetitive current which may be allowed to flow for the
time state.
T
A
(Ambient Operating Temperature) -
Ambient
temperature range permitted during operation in a circuit.
T
STG
(Storage Temperature) -
Temperature range
permitted during storage.
I
DM
(Off-State Current) -
Maximum value of off-state
current that results from the application of the maximum
off-state voltage (V
DM
).
I
RM
(Reverse Current) -
Maximum value of reverse current
that results from the application of the maximum reverse
voltage (V
RM
).
V
Z
(Clamping Voltage) -
Off-state voltage at a specified
current.
V
BO
(Breakdown Voltage) -
Voltage at which the device
switches from the off-state to the on-state.
I
H
(Holding Current) -
Minimum on-state current that will
hold the device in the on-state after it has been latched on.
V
T
(On-State Voltage) -
Voltage across the main terminals
for a specified on-state current.
C
O
(Main Terminal Capacitance) -
Capacitance between
the main terminals at a specified off-state voltage.
C++ 属于面向对象的编程语言，OOP的思想不必多说，特别对于复杂的软件工程来说，利用OOP绝对是事半功倍，相对于传统的C来说； 当然用C来写单片机程序无可厚非，已经延续了一个传统，从大学时学的开始到工作岗位，好多人都是一直用C来做，但是既然Keil支持C++编译， 可以用C++来编写你的代码，可以利用高级语言来结构化，清晰化你的程序，为嘛不用呢！哈哈，个人看法！下面进入正题： C+...[详细]
汽车电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
