BTA/BTB08 and T8 Series
8A TRIAC
S
SNUBBERLESS , LOGIC LEVEL & STANDARD
MAIN FEATURES:
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT (Q )
1
Value
8
600 and 800
5 to 50
Unit
A
V
mA
A1
A2
G
A2
A2
A2
G
A1 A2
A1
G
DPAK
(T8-B)
A2
D
2
PAK
(T8-G)
DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA/BTB08 and T8 triac series is
suitable for general purpose AC switching. They
can be used as an ON/OFF function in
applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control operation in light dimmers, motor
speed controllers,...
The snubberless versions (BTA/BTB...W and T8
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)
ABSOLUTE MAXIMUM RATINGS
Symbol
I
T(RMS)
Parameter
RMS on-state current (full sine wave)
A1
A2
G
IPAK
(T8-H)
A2
A1
A2
G
A1
A2
G
TO-220AB Insulated
(BTA08)
TO-220AB
(BTB08)
Value
Tc = 110°C
8
Tc = 100°C
t = 20 ms
t = 16.7 ms
80
84
45
Tj = 125°C
Tj = 125°C
Tj = 125°C
50
4
1
- 40 to + 150
- 40 to + 125
Unit
A
DPAK / D PAK
IPAK / TO-220AB
TO-220AB Ins.
I
TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
F = 50 Hz
F = 60 Hz
A
It
dI/dt
I
GM
P
G(AV)
T
stg
T
j
tp = 10 ms
F = 120 Hz
tp = 20
µs
As
A/µs
A
W
°C
1/10
September 2000 - Ed: 3
BTA/BTB08 and T8 Series
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
■
SNUBBERLESS and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions
Quadrant
T810
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
(dI/dt)c (2)
V
D
= 12 V
R
L
= 30
Ω
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
I - III
II
V
D
= 67 %V
DRM
gate open
Tj = 125°C
(dV/dt)c = 0.1 V/µs Tj = 125°C
(dV/dt)c = 10 V/µs
Without snubber
Tj = 125°C
Tj = 125°C
MIN.
MIN.
MAX.
15
25
30
40
5.4
2.8
-
35
50
60
400
-
-
4.5
10
10
15
20
3.5
1.5
-
10
T8
T835
35
TW
5
1.3
0.2
15
25
30
40
5.4
2.8
-
35
50
60
400
-
-
4.5
50
70
80
1000
-
-
7
V/µs
A/ms
BTA/BTB08
SW
10
CW
35
BW
50
mA
V
V
mA
mA
Unit
V
D
= V
DRM
R
L
= 3.3 kΩ
Tj = 125°C
I
T
= 100 mA
I
G
= 1.2 I
GT
■
STANDARD (4 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB08
C
I
GT
(1)
V
D
= 12 V
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= V
DRM
R
L
= 3.3 kΩ Tj = 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 %V
DRM
gate open Tj = 125°C
Tj = 125°C
I - III - IV
II
MIN.
MIN.
R
L
= 30
Ω
I - II - III
IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
MAX.
25
40
80
200
5
25
50
1.3
0.2
50
50
100
400
10
V/µs
V/µs
B
50
100
mA
V
V
mA
mA
Unit
(dV/dt)c (2) (dI/dt)c = 3.5 A/ms
STATIC CHARACTERISTICS
Symbol
V
TM
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Test Conditions
I
TM
= 11 A
tp = 380
µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
50
5
1
Unit
V
V
mΩ
µA
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
2/10
BTA/BTB08 and T8 Series
Fig. 1:
Maximum power dissipation versus RMS
on-state current (full cycle).
P (W)
10
9
8
7
6
5
4
3
2
1
0
Fig. 2-1:
RMS on-state current versus case
temperature (full cycle).
IT(RMS) (A)
10
9
8
7
6
5
4
3
2
1
0
BTB/T8
BTA
IT(RMS)(A)
Tc(°C)
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
Fig. 2-2:
RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm),full cycle.
IT(RMS) (A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
Tamb(°C)
50
75
100
125
DPAK
(S=0.5cm
2
)
D PAK
(S=1cm
2
)
2
Fig. 3:
Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
1E+0
Zth(j-c)
DPAK/IP
AK
Zth(j-a)
1E-1
TO-220AB/D PAK
Zth(j-a)
1E-2
1E-3
1E-3
tp(s)
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig. 4:
values).
ITM (A)
100
On-state
characteristics
(maximum
Fig. 5:
Surge peak on-state current versus
number of cycles.
ITSM (A)
Tj max.
Vto = 0.85 V
Rd = 50 mΩ
Tj=Tj max
10
Tj=25°C
VTM(V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
90
80
70
60
50
40
30
20
10
0
t=20ms
One cycle
Non repetitive
Tj initial=25°C
Repetitive
Tc=100°C
Number of cycles
1
10
100
1000
5/10
NXP MCU
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