Si2303BDS
New Product
Vishay Siliconix
P-Channel, 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
-30
r
DS(on)
(W)
0.200 @ V
GS
= -10 V
0.380 @ V
GS
= -4.5 V
I
D
(A)
b
-1.4
-1.0
TO-236
(SOT-23)
G
1
3
D
S
2
Top View
Si2303BDS (L3)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
b
_
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
b
Power Dissipation
b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
T
A
= 70_C
I
D
I
DM
I
S
-0.75
0.9
0.57
-55 to 150
Symbol
V
DS
V
GS
5 sec
-30
"20
- 1.4
-1.1
-10
Steady State
Unit
V
-1.3
-1.0
A
-0.6
0.7
0.45
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b
Maximum Junction-to-Ambient
c
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t
v
5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72065
S-21980—Rev. A, 04-Nov-02
www.vishay.com
R
thJA
Symbol
Typical
120
140
Maximum
145
175
Unit
_C/W
_
1
Si2303BDS
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-Resistance
a
Forward Transconductance
a
Diode Forward Voltage
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= -10
mA
V
DS
= V
GS
, I
D
= -250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= -30 V, V
GS
= 0 V
V
DS
= -30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
v
-5 V, V
GS
= -10 V
V
GS
= -10 V, I
D
= -1.7 A
V
GS
= -4.5 V, I
D
= -1.3 A
V
DS
= -5 V, I
D
= -1.7 A
I
S
= -0.75 A, V
GS
= 0 V
-6
0.150
0.285
2.0
-0.85
-1.2
0.200
0.380
W
S
V
-30
-1.0
-3.0
"100
-1
-10
mA
m
A
V
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
= -15 V, V
GS
= 0, f = 1 MHz
V
DS
= -15 V, V
GS
= -10 V
I
D
^
-1.7 A
4.3
0.8
1.3
180
50
35
pF
10
nC
Switching
c
t
d(on)
Turn-On Time
t
r
t
d(off)
t
f
Notes
a. Pulse test: PW
v300
ms
duty cycle
v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
S
FaxBack 408-970-5600
V
DD
= -15 V, R
L
=15
W
I
D
^
-1.0 A, V
GEN
= -4.5 V
R
G
= 6
W
55
40
10
10
80
60
ns
20
20
Turn-Off Time
www.vishay.com
2
Document Number: 72065
S-21980—Rev. A, 04-Nov-02
Si2303BDS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
Vishay Siliconix
Output Characteristics
V
GS
= 10 thru 6 V
10
Transfer Characteristics
8
I D - Drain Current (A)
5V
6
I D - Drain Current (A)
8
T
C
= -55_C
25_C
6
125_C
4
4
4V
2
2, 3 V
0
0
2
4
6
8
10
2
0
0
1
2
3
4
5
6
7
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.8
300
Capacitance
250
r DS(on)- On-Resistance (
W
)
C - Capacitance (pF)
0.6
V
GS
= 4.5 V
C
iss
200
0.4
150
V
GS
= 10 V
0.2
100
C
oss
50
C
rss
0.0
0
2
4
6
8
10
0
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
10
V
DS
= 15 V
I
D
= 1.7 A
V GS - Gate-to-Source Voltage (V)
8
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 1.7 A
1.4
r DS(on)- On-Resistance (
W
)
(Normalized)
0
1
2
3
4
5
6
1.2
4
1.0
2
0.8
0
0.6
-50
-25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Document Number: 72065
S-21980—Rev. A, 04-Nov-02
www.vishay.com
3
Si2303BDS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
1.0
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
1
r DS(on)- On-Resistance (
W
)
0.8
I S - Source Current (A)
0.6
I
D
= 1.7 A
0.4
T
J
= 25_C
0.2
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.9
10
Single Pulse Power
0.6
V GS(th) Variance (V)
8
I
D
= 250
mA
Power (W)
0.3
6
0.0
4
T
A
= 25_C
-0.3
2
-0.6
-50
0
-25
0
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
T
J
- Temperature (_C)
Time (sec)
Safe Operating Area, Junction-to-Case
100.0
10.0
I
D
- Drain Current (A)
Limited
by r
DS(on)
1.0
10
ms
100
ms
1 ms
10 ms
0.1
100 ms
T
A
= 25_C
Single Pulse
0.01
0.1
1
10
100
dc, 100 s, 10 s, 1 s
V
DS
- Drain-to-Source Voltage (V)
Square Wave Pulse Duration (sec)
www.vishay.com
Document Number: 72065
S-21980—Rev. A, 04-Nov-02
4
Si2303BDS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Vishay Siliconix
0.2
Notes:
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 62.5_C/W
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72065
S-21980—Rev. A, 04-Nov-02
www.vishay.com
5
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