Absolute Maximum Ratings
Symbol Conditions
1)
V
CES
V
CGR
I
C
I
CM
V
GES
P
tot
T
j
, (T
stg
)
V
isol
humidity
climate
I
F
= –I
C
I
FM
= –I
CM
I
FSM
I
2
t
R
GE
= 20 k
Ω
T
case
= 25/70 °C
T
case
= 25/70 °C; t
p
= 1 ms
per IGBT, T
case
= 25 °C
AC, 1 min.
DIN 40040
DIN IEC 68 T.1
T
case
= 25/80 °C
T
case
= 25/80 °C; t
p
= 1 ms
t
p
= 10 ms; sin.; T
j
= 150 °C
t
p
= 10 ms; T
j
= 150 °C
Values
Units
1200
1200
190 / 145
380 / 290
± 20
800
–40 ... + 150 (125)
2 500
Class F
40/125/56
130 / 90
380 / 290
1100
6000
V
V
A
A
V
W
°C
V
SEMITRANS
®
M
Low Loss IGBT Modules
SKM 145 GB 124 D
Inverse Diode
A
A
A
A
2
s
SEMITRANS 2
Characteristics
Symbol Conditions
1)
V
(BR)CES
V
GE
= 0, I
C
= 4 mA
V
GE(th)
V
GE
= V
CE
, I
C
= 4 mA
I
CES
T
j
= 25 °C
V
GE
= 0
V
CE
= V
CES
T
j
= 125 °C
I
GES
V
GE
= 20 V, V
CE
= 0
V
CEsat
I
C
= 100 A V
GE
= 15 V;
I
C
= 150 A T
j
= 25 (125) °C
V
CEsat
g
fs
V
CE
= 20 V, I
C
= 100 A
C
CHC
C
ies
C
oes
C
res
L
CE
t
d(on)
t
r
t
d(off)
t
f
E
on 5)
E
off 5)
V
F
= V
EC
V
F
= V
EC
V
TO
r
t
I
RRM
Q
rr
R
thjc
R
thjc
R
thch
per IGBT
V
GE
= 0
V
CE
= 25 V
f = 1 MHz
V
CC
= 600 V
V
GE
= –15 V / +15 V
3)
I
C
= 100 A, ind. load
R
Gon
= R
Goff
= 8
Ω
T
j
= 125 °C
≥
V
CES
4,5
–
–
–
–
–
54
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
min.
typ.
–
5,5
0,2
9
–
2,1(2,4)
2,6(3,1)
–
–
6,5
1000
500
–
110
50
470
60
14
13
2,0(1,8)
2,25(2,1)
1,1
–
52
12
–
–
–
max.
–
6,5
2
–
1
2,45(2,85)
–
–
350
8,5
1500
600
30
–
–
–
–
–
–
2,5
–
1,2
11
–
–
0,15
0,30
0,05
Units
V
V
mA
mA
µA
V
V
S
pF
nF
pF
pF
nH
ns
ns
ns
ns
mWs
mWs
V
V
V
m
Ω
A
µC
°C/W
°C/W
°C/W
GB
Features
•
MOS input (voltage controlled)
•
N channel, homogeneous Silicon
structure (NPT- Non punch-
through IGBT)
•
Low loss high density chip
•
Low tail current
•
High short circuit capability,
self limiting to 6 * I
cnom
•
Latch-up free
•
Fast & soft inverse CAL diodes
8)
•
Isolated copper baseplate using
DCB Direct Copper Bonding
Technology without hard mould
•
Large clearance (10 mm) and
creepage distances (20 mm)
Typical Applications:
→
page 5
•
Switching (not for linear use)
1)
2)
3)
5)
8)
Inverse Diode
8)
I:\MARKETIN\FRAMEDAT\datbl\B06-igbt\145GB124D_1.FM
I
F
= 100 A V
GE
= 0 V;
I
F
= 150 A T
j
= 25 (125) °C
T
j
= 125 °C
T
j
= 125 °C
I
F
= 100 A; T
j
= 125 °C
2)
I
F
= 100 A; T
j
= 125 °C
2)
per IGBT
per diode
per module
Thermal characteristics
T
case
= 25 °C, unless otherwise
specified
I
F
= – I
C
, V
R
= 600 V,
–di
F
/dt = 1000 A/µs, V
GE
= 0 V
Use V
GEoff
= –5... –15 V
See fig. 2 + 3; R
Goff
= 6,8
Ω
CAL = Controlled Axial Lifetime
Technology
Cases and mech. data
→
page 6
© by SEMIKRON
0898
1
SKM 145 GB 124 D
900
W
800
700
600
500
20
400
300
200
100
P
tot
0
0
T
C
20
40
60
80
100
120
140 160
°C
E
0
0
I
C
50
100
150
200
A
250
10
E
off
M145G124.X LS-1
40
mWs
M145G124.X LS -2
E
on
30
T
j
= 125 °C
V
CE
= 600 V
V
GE
= + 15 V
R
G
= 8
Ω
Fig. 1 Rated power dissipation P
tot
= f (T
C
)
M145G124.X LS-3
Fig. 2 Turn-on /-off energy = f (I
C
)
M145G124.X LS -4
40
mWs
E
on
30
T
j
= 125 °C
V
CE
= 600 V
V
GE
= + 15 V
I
C
= 100 A
1000
A
100
100µs
t
p
=16µs
1 pulse
T
C
= 25 °C
T
j
≤
150 °C
20
E
off
10
1ms
10ms
10
E
0
0
R
G
10
20
30
40
50
Ω
60
I
C
0,1
1
V
CE
10
100
1000
V
10000
1
Not for
linear use
Fig. 3 Turn-on /-off energy = f (R
G
)
M145G124.X LS -5
Fig. 4 Maximum safe operating area (SOA) I
C
= f (V
CE
)
2,5
T
j
≤
150 °C
V
GE
= 15 V
R
Goff
= 8
Ω
I
C
= 100 A
12
M145G124.X LS -6
T
j
≤
150 °C
V
GE
= ± 15 V
t
sc
≤
10 µs
L < 25 nH
I
C
= 100 A
2
10
di/dt=300 A/µs
900 A/µs
1500 A/µs
8
1,5
6
1
4
0,5
I
Cpuls
/I
C
0
0
200
V
CE
400
600
800
1000 1200 1400
V
allowed numbers of
short circuits: <1000
time between short
circuits: >1s
2
I
CSC
/I
C
0
0
V
CE
200
400
600
800
1000 1200
V
1400
Fig. 5 Turn-off safe operating area (RBSOA)
Fig. 6 Safe operating area at short circuit I
C
= f (V
CE
)
B 6 – 132
0898
© by SEMIKRON
M1 4 5G1 24 .X LS -8
200
A
160
T
j
= 150 °C
V
GE
≥
15V
120
80
40
I
C
0
0
T
C
20
40
60
80
100
120
140
160
°C
Fig. 8 Rated current vs. temperature I
C
= f (T
C
)
M145G124.X LS -9
M145G124.X LS-10
200
A
17V
15V
13V
11V
9V
7V
200
A
17V
15V
13V
11V
9V
7V
150
150
100
100
50
50
I
C
0
0
V
CE
1
2
3
4
V
5
I
C
0
0
V
CE
1
2
3
4
V
5
Fig. 9 Typ. output characteristic, t
p
= 80 µs; 25 °C
Fig. 10 Typ. output characteristic, t
p
= 80 µs; 125 °C
M145G124.X LS-12
200
P
cond(t)
= V
CEsat(t)
· I
C(t)
V
CEsat(t)
= V
CE(TO)(Tj)
+ r
CE(Tj)
· I
C(t)
V
CE(TO)(Tj)
≤
1,3 + 0,0005 (T
j
–25) [V]
typ.: r
CE(Tj)
= 0,008 + 0,000025 (T
j
–25) [
Ω
]
max.: r
CE(Tj)
= 0,012 + 0,000035 (T
j
–25) [
Ω
]
valid for V
GE
= + 15 +2
–1
[V]; I
C
> 0,3 I
Cnom
A
150
100
50
I
C
0
0
V
GE
2
4
6
8
10
12
V
14
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations
Fig. 12 Typ. transfer characteristic, t
p
= 80 µs; V
CE
= 20 V
© by SEMIKRON
0898
B 6 – 133
SKM 145 GB 124 D
20
V
18
16
14
12
10
8
6
4
C
V
GE
2
0
0
Q
Gate
100
200
300
400
nC
500
0,1
0
V
CE
10
20
V
30
C
res
1
C
oes
600V
800V
C
ies
M145G124.X LS-13
I
Cpuls
= 100 A
100
nF
M145G124.X LS -14
V
GE
= 0 V
f = 1 MHz
10
Fig. 13 Typ. gate charge characteristic
M145G124.X LS-15
Fig. 14 Typ. capacitances vs.V
CE
M145G124.X LS -16
1000
ns
t
doff
T
j
= 125 °C
V
CE
= 600 V
V
GE
= ± 15 V
R
Gon
= 8
Ω
R
Goff
= 8
Ω
induct. load
10000
ns
t
doff
1000
T
j
= 125 °C
V
CE
= 600 V
V
GE
= ± 15 V
I
C
= 100 A
induct. load
100
t
don
t
r
t
f
t
100
t
don
t
r
t
f
t
10
0
I
C
50
100
150
200
A
250
10
0
R
G
20
40
Ω
60
Fig. 15 Typ. switching times vs. I
C
M145G124.X LS -17
Fig. 16 Typ. switching times vs. gate resistor R
G
M145G124.X LS-18
200
A
T
j
=125°C, typ.
T
j
=25°C, typ.
T
j
=125°C, max.
T
j
=25°C, max.
100
7
mJ
6
5
4
3
2
R
G
=
4Ω
6Ω
10 Ω
V
CC
= 600 V
T
j
= 125 °C
V
GE
= ± 15 V
150
30 Ω
60 Ω
50
1
I
F
0
0
V
F
1
2
3
V
4
E
offD
0
0
I
F
50
100
150
A
200
Fig. 17 Typ. CAL diode forward characteristic
Fig. 18 Diode turn-off energy dissipation per pulse
B 6 – 134
0898
© by SEMIKRON
1
K/W
M 145G124.X LS -19
1
K/W
M 145G124.X LS -20
0,1
0,1
0,01
0,001
Z
thJC
0,0001
0,00001
t
p
single pulse
D=0,50
0,20
0,10
0,05
0,02
0,01
0,01
D=0,5
0,2
0,1
0,05
0,02
0,01
single pulse
0,001
Z
thJC
0,0001
0,00001
t
p
0,0001
0,001
0,01
0,1
s
1
0,0001
0,001
0,01
0,1
s
1
Fig. 19 Transient thermal impedance of IGBT
Z
thJC
= f (t
p
); D = t
p
/ t
c
= t
p
· f
180
A
150
M145G124.X LS-22
Fig. 20 Transient thermal impedance of
inverse CAL diodes Z
thjc
= f (t
p
); D = t
p
/ t
c
= t
p
· f
V
CC
= 600 V
T
j
= 125 °C
V
GE
= ± 15 V
180
A
150
6Ω
M145G124.X LS-23
R
G=
4Ω
R
G
=
4 Ω
V
CC
= 600 V
T
j
= 125 °C
V
GE
= ± 15 V
I
F
= 100 A
120
6Ω
120
10 Ω
90
10 Ω
60
30 Ω
60 Ω
30
I
RR
0
0
I
F
50
100
150
A
200
90
30 Ω
60 Ω
30
I
RR
0
0
1000
di
F
/dt
2000
3000
4000
A/µs
5000
60
Fig. 22 Typ. CAL diode peak reverse recovery
current I
RR
= f (I
F
; R
G
)
Fig. 23 Typ. CAL diode peak reverse recovery
current I
RR
= f (di/dt)
25
M 145G124.X LS -24
Typical Applications
include
Switched mode power supplies
DC servo and robot drives
Inverters
DC choppers
AC motor speed control
UPS Uninterruptable power supplies
General power switching applications
µC
20
30 Ω
15
60 Ω
10 Ω
6Ω
R
G
=
4Ω
I
F
=
150 A
V
CC
= 600 V
T
j
= 125 °C
V
GE
= ± 15 V
100 A
75 A
10
50 A
25 A
5
Q
rr
0
0
1000
di
F
/dt
2000
3000
4000
5000
A/µs
Fig. 24 Typ. CAL diode recovered charge Q
rr
= f (di/dt)
© by SEMIKRON
0898
B 6 – 135
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