TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal
参数名称 | 属性值 |
包装说明 | IN-LINE, R-PSIP-T3 |
Reach Compliance Code | unknow |
配置 | SINGLE |
FET 技术 | JUNCTION |
最大反馈电容 (Crss) | 0.65 pF |
最高频带 | VERY HIGH FREQUENCY BAND |
JESD-30 代码 | R-PSIP-T3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | DEPLETION MODE |
最高工作温度 | 125 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
极性/信道类型 | N-CHANNEL |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
Base Number Matches | 1 |
2SK192A-YTPE4 | 2SK192A-BLTPE4 | 2SK192A-GRTPE4 | PFV_15 | |
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描述 | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal | CONDUCTIVE POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS (HYBRID TYPE) |
包装说明 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | - |
Reach Compliance Code | unknow | unknow | unknow | - |
配置 | SINGLE | SINGLE | SINGLE | - |
FET 技术 | JUNCTION | JUNCTION | JUNCTION | - |
最大反馈电容 (Crss) | 0.65 pF | 0.65 pF | 0.65 pF | - |
最高频带 | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | - |
JESD-30 代码 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | - |
元件数量 | 1 | 1 | 1 | - |
端子数量 | 3 | 3 | 3 | - |
工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | - |
最高工作温度 | 125 °C | 125 °C | 125 °C | - |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
封装形式 | IN-LINE | IN-LINE | IN-LINE | - |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | - |
认证状态 | Not Qualified | Not Qualified | Not Qualified | - |
表面贴装 | NO | NO | NO | - |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - |
端子位置 | SINGLE | SINGLE | SINGLE | - |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | - |
晶体管元件材料 | SILICON | SILICON | SILICON | - |
Base Number Matches | 1 | 1 | 1 | - |
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