RFMD’s SXB4089Z amplifier is a high efficiency InGaP/GaAs heterojunc-
tion bipolar transistor (HBT) MMIC housed in low-cost, surface-mountable
plastic package. These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 400MHz to 2500MHz cellular,
ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal
choice for multi-carrier as well as digital applications.
Features
Optimum Technology
Matching® Applied
On-Chip Active Bias Control,
Single 5V Supply
High Output 3rd Order
Intercept:
+45dBm Typ.
High P1dB: +28dBm Typ.
High Gain: +20dB at 880MHz
Low R
TH
: 25°C/W Typ.
Robust 2000V ESD, Class 2
WCDMA, PCS, Cellular
Systems
Multi-Carrier Applications
GaAs HBT
GaAs MESFET
InGaP HBT
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
SiGe BiCMOS
50
45
40
35
Typical IP3, P1dB, Gain
OIP3
P1dB
Gain
Applications
dBm
30
25
20
15
10
5
0
880 MHz
1960 MHz
2140 MHz
Parameter
Small Signal Gain
Min.
18.0
Specification
Typ.
Max.
Unit
Condition
20.0
22.0
dBm
880MHz
15.0
dBm
1960MHz
12.5
14.0
15.5
dBm
2140MHz
Output Power at 1dB Compression,
27.5
dBm
880MHz
27.5
dBm
1960MHz
26.0
27.5
dBm
2140MHz
Output Third Order Intercept Point
41.5
43.5
dBm
880MHz
44.5
dBm
1960MHz
42.5
44.5
dBm
2140MHz
Noise Figure
5.6
dB
880MHz
3.3
dB
1960MHz
3.3
dB
2140MHz
Input VSWR
1.3:1
2.0:1
880MHz
1.3:1
1960MHz
1.3:1
2140MHz
Device Operating Voltage
4.75
5.0
5.25
V
Device Operating Current
235.0
265.0
330.0
mA
Thermal Resistance
25.3
°C/W
junction to backside
Test Conditions: T
A
= 25°C, Z
0
= 50Measured in Application Circuit, P
OUT
per tone = +11dBm, Tone Spacing = 1MHz
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-