DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BF469; BF471
NPN high-voltage transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1996 Dec 09
Philips Semiconductors
Product specification
NPN high-voltage transistors
FEATURES
•
Low feedback capacitance.
handbook, halfpage
BF469; BF471
APPLICATIONS
•
Intended for class-B video output stages in television
receivers and for high-voltage IF output stages.
DESCRIPTION
NPN transistors in a TO-126; SOT32 plastic package.
PNP complements: BF470 and BF472.
1
2
3
Top view
2
3
1
MAM254
PINNING
PIN
1
2
3
emitter
collector, connected to mounting base
base
DESCRIPTION
Fig.1
Simplified outline (TO-126; SOT32) and
symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BF469
BF471
V
CEO
collector-emitter voltage
BF469
BF471
I
CM
P
tot
h
FE
C
re
f
T
peak collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
T
mb
≤
114
°C
I
C
= 25 mA; V
CE
= 20 V
I
C
= i
c
= 0; V
CE
= 30 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
open base
−
−
−
−
50
−
60
250
300
100
1.8
−
1.8
−
pF
MHz
V
V
mA
W
open emitter
−
−
250
300
V
V
CONDITIONS
MIN.
MAX.
UNIT
1996 Dec 09
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BF469
BF471
V
CEO
collector-emitter voltage
BF469
BF471
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
mb
≤
114
°C
open collector
open base
−
−
−
−
−
−
−
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
BF469; BF471
MIN.
MAX.
250
300
250
300
5
50
100
50
1.8
+150
150
+150
UNIT
V
V
V
V
V
mA
mA
mA
W
°C
°C
°C
−65
−
−65
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
Note
1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm, mounting pad for collector lead
minimum 10
×
10 mm.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
= 200 V
I
E
= 0; V
CB
= 200 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 25 mA; V
CE
= 20 V
I
C
= 30 mA; I
B
= 5 mA
I
C
= i
c
= 0; V
CE
= 30 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
−
−
−
50
−
−
60
MIN.
MAX.
10
10
50
−
0.6
1.8
−
V
pF
MHz
UNIT
nA
µA
nA
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
CONDITIONS
in free air; note 1
VALUE
100
20
UNIT
K/W
K/W
1996 Dec 09
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
PACKAGE OUTLINE
BF469; BF471
handbook, full pagewidth
2.7
max
7.8 max
3.75
3.2
3.0
11.1
max
2.54
max
(1)
1.2
15.3
min
1
0.88
max
0.5
2
3
4.58
90 o
2.29
MBC076
Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled.
Fig.2 TO-126; SOT32.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Dec 09
4
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Philips Semiconductors
Product specification
NPN high-voltage transistors
NOTES
BF469; BF471
1996 Dec 09
5
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