Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-186, 3 PIN
| 参数名称 | 属性值 |
| 厂商名称 | YAGEO(国巨) |
| 零件包装代码 | SOT |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 |
| 制造商包装代码 | SOT186 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 外壳连接 | ISOLATED |
| 最大集电极电流 (IC) | 3 A |
| 集电极-发射极最大电压 | 100 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 25 |
| JESD-30 代码 | R-PSFM-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | NPN |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 3 MHz |
| BD939F | BD933F | BD935F | BD941F | BD937F | |
|---|---|---|---|---|---|
| 描述 | Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-186, 3 PIN | Power Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-186, 3 PIN | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-186, 3 PIN | Power Bipolar Transistor, 3A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-186, 3 PIN | Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-186, 3 PIN |
| 厂商名称 | YAGEO(国巨) | YAGEO(国巨) | YAGEO(国巨) | YAGEO(国巨) | YAGEO(国巨) |
| 零件包装代码 | SOT | SOT | SOT | SOT | SOT |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 | 3 | 3 | 3 | 3 |
| 制造商包装代码 | SOT186 | SOT186 | SOT186 | SOT186 | SOT186 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| 最大集电极电流 (IC) | 3 A | 3 A | 3 A | 3 A | 3 A |
| 集电极-发射极最大电压 | 100 V | 45 V | 60 V | 120 V | 80 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 25 | 25 | 25 | 25 | 25 |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 3 MHz | 3 MHz | 3 MHz | 3 MHz | 3 MHz |
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