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SB3150-T3

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD,
产品类别分立半导体    二极管   
文件大小41KB,共4页
制造商Won-Top Electronics Co., Ltd.
官网地址https://www.wontop.com/
下载文档 详细参数 选型对比 全文预览

SB3150-T3概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD,

SB3150-T3规格参数

参数名称属性值
厂商名称Won-Top Electronics Co., Ltd.
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性FREE WHEELING DIODE, LOW POWER LOSS
应用EFFICIENCY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.9 V
JEDEC-95代码DO-201AD
JESD-30 代码O-PALF-W2
最大非重复峰值正向电流80 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-65 °C
最大输出电流3 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
最大重复峰值反向电压150 V
最大反向电流200 µA
表面贴装NO
技术SCHOTTKY
端子形式WIRE
端子位置AXIAL

文档预览

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®
SB3150 – SB3200
3.0A HIGH VOLTAGE SCHOTTKY BARRIER DIODE
WON-TOP ELECTRONICS
Pb
Features
Schottky Barrier Chip
Guard Ring for Transient and ESD Protection
Surge Overload Rating to 80A Peak
Low Power Loss, High Efficiency
Ideally Suited for Use in High Frequency
SMPS, Inverters and As Free Wheeling Diodes
A
B
A
Mechanical Data
Case: DO-201AD, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.2 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
Dim
A
B
C
D
DO-201AD
Min
25.4
7.20
1.20
4.80
Max
9.50
1.30
5.30
C
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Thermal Resistance, Junction to Ambient (Note 3)
Thermal Resistance, Junction to Lead (Note 3)
Operating and Storage Temperature Range
@I
F
= 3.0A
@T
J
= 25°C
@T
J
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
J
R
θJA
R
θJL
T
J
, T
STG
SB3150
SB3200
Unit
150
105
3.0
80
0.9
0.2
5.0
80
28
10
-65 to +150
200
140
V
V
A
A
V
mA
pF
°C/W
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
3. Vertical PCB mounting with 12.7mm lead length on 63.5 x 63.5mm copper pad.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
1

SB3150-T3相似产品对比

SB3150-T3 SB3150-LF SB3150-T3-LF SB3200-TB-LF SB3200-T3-LF SB3200-LF SB3200-T3 SB3200
描述 Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD, Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD, Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD, Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,
厂商名称 Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd.
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compli
其他特性 FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS
应用 EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.9 V 0.9 V 0.9 V 0.9 V 0.9 V 0.9 V 0.9 V 0.9 V
JEDEC-95代码 DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
JESD-30 代码 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
最大非重复峰值正向电流 80 A 80 A 80 A 80 A 80 A 80 A 80 A 80 A
元件数量 1 1 1 1 1 1 1 1
相数 1 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2 2
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
最大输出电流 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
最大重复峰值反向电压 150 V 150 V 150 V 200 V 200 V 200 V 200 V 200 V
最大反向电流 200 µA 200 µA 200 µA 200 µA 200 µA 200 µA 200 µA 200 µA
表面贴装 NO NO NO NO NO NO NO NO
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 -

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