Power Field-Effect Transistor, 3.6A I(D), 500V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(SJ), D2-PACK, 3 PIN
| 参数名称 | 属性值 |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 |
| Reach Compliance Code | unknow |
| 雪崩能效等级（Eas） | 227.9 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 500 V |
| 最大漏极电流 (ID) | 3.6 A |
| 最大漏源导通电阻 | 2.3 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-G2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 14.4 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| 2SK3987-01SJ | 2SK3987-01L | 2SK3987-01S | |
|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 3.6A I(D), 500V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(SJ), D2-PACK, 3 PIN | Power Field-Effect Transistor, 3.6A I(D), 500V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(L), 3 PIN | Power Field-Effect Transistor, 3.6A I(D), 500V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 | 3 | 3 |
| Reach Compliance Code | unknow | unknow | unknow |
| 雪崩能效等级（Eas） | 227.9 mJ | 227.9 mJ | 227.9 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 500 V | 500 V | 500 V |
| 最大漏极电流 (ID) | 3.6 A | 3.6 A | 3.6 A |
| 最大漏源导通电阻 | 2.3 Ω | 2.3 Ω | 2.3 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-G2 | R-PSIP-T3 | R-PSSO-G2 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 2 | 3 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | IN-LINE | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 14.4 A | 14.4 A | 14.4 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | NO | YES |
| 端子形式 | GULL WING | THROUGH-HOLE | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 |
| 外壳连接 | DRAIN | - | DRAIN |
| 最大漏极电流 (Abs) (ID) | - | 3.6 A | 3.6 A |
| 最高工作温度 | - | 150 °C | 150 °C |
| 最大功率耗散 (Abs) | - | 60 W | 60 W |
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