TRANSISTOR 8.2 A, 200 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power
| 参数名称 | 属性值 |
| 厂商名称 | NXP(恩智浦) |
| 零件包装代码 | TO-220AB |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 雪崩能效等级（Eas） | 50 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V |
| 最大漏极电流 (ID) | 8.2 A |
| 最大漏源导通电阻 | 0.5 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 80 pF |
| JEDEC-95代码 | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL |
| 功耗环境最大值 | 95 W |
| 最大脉冲漏极电流 (IDM) | 33 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 最大关闭时间（toff） | 180 ns |
| 最大开启时间（吨） | 90 ns |
| BUK454-200B | BUK454-200A | BUK454-200A,127 | BUK454-200A127 | |
|---|---|---|---|---|
| 描述 | TRANSISTOR 8.2 A, 200 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | TRANSISTOR 9.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | 9.2A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | TRANSISTOR 9.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power |
| 厂商名称 | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 50 mJ | 50 mJ | 50 mJ | 50 mJ |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V | 200 V | 200 V | 200 V |
| 最大漏极电流 (ID) | 8.2 A | 9.2 A | 9.2 A | 9.2 A |
| 最大漏源导通电阻 | 0.5 Ω | 0.4 Ω | 0.4 Ω | 0.4 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 33 A | 36 A | 36 A | 36 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
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