¡ Semiconductor
MSM51V16160B/BSL
¡ Semiconductor
MSM51V16160B/BSL
E2G0081-17-41
1,048,576-Word
¥
16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM51V16160B/BSL is a 1,048,576-word
¥
16-bit dynamic RAM fabricated in Oki's silicon-gate
CMOS technology. The MSM51V16160B/BSL achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/
double-layer metal CMOS process. The MSM51V16160B/BSL is available in a 42-pin plastic SOJ or
50/44-pin plastic TSOP. The MSM51V16160BSL (the self-refresh version) is specially designed for
lower-power applications.
FEATURES
• 1,048,576-word
¥
16-bit configuration
• Single 3.3 V power supply,
±0.3
V tolerance
• Input
: LVTTL compatible, low input capacitance
• Output : LVTTL compatible, 3-state
• Refresh : 4096 cycles/64 ms, 4096 cycles/128 ms (SL version)
• Fast page mode, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
•
CAS
before
RAS
self-refresh capability (SL version)
• Package options:
42-pin 400 mil plastic SOJ
(SOJ42-P-400-1.27)
(Product : MSM51V16160B/BSL-xxJS)
50/44-pin 400 mil plastic TSOP
(TSOPII50/44-P-400-0.80-K) (Product : MSM51V16160B/BSL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
90 ns
110 ns
130 ns
396 mW
324 mW
288 mW
1.8 mW/
0.72 mW (SL version)
MSM51V16160B/BSL-50 50 ns 25 ns 13 ns 13 ns
MSM51V16160B/BSL-60 60 ns 30 ns 15 ns 15 ns
MSM51V16160B/BSL-70 70 ns 35 ns 20 ns 20 ns
385
MSM51V16160B/BSL
¡ Semiconductor
PIN CONFIGURATION (TOP VIEW)
V
CC
1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
V
CC
6
DQ5 7
DQ6 8
DQ7 9
DQ8 10
NC 11
NC 12
WE
13
RAS
14
A11R 15
A10R 16
A0 17
A1 18
A2 19
A3 20
V
CC
21
42 V
SS
41 DQ16
40 DQ15
39 DQ14
38 DQ13
37 V
SS
36 DQ12
35 DQ11
34 DQ10
33 DQ9
32 NC
31
LCAS
30
UCAS
29
OE
28 A9R
27 A8R
26 A7
25 A6
24 A5
23 A4
22 V
SS
NC 15
NC 16
WE
17
RAS
18
A11R 19
A10R 20
A0 21
A1 22
A2 23
A3 24
V
CC
25
36 NC
35
LCAS
34
UCAS
33
OE
32 A9R
31 A8R
30 A7
29 A6
28 A5
27 A4
26 V
SS
V
CC
1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
V
CC
6
DQ5 7
DQ6 8
DQ7 9
DQ8 10
NC 11
50 V
SS
49 DQ16
48 DQ15
47 DQ14
46 DQ13
45 V
SS
44 DQ12
43 DQ11
42 DQ10
41 DQ9
40 NC
42-Pin Plastic SOJ
50/44-Pin Plastic TSOP
(K Type)
Pin Name
A0 - A7,
A8R - A11R
RAS
LCAS
UCAS
DQ1 - DQ16
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Lower Byte Column Address Strobe
Upper Byte Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (3.3 V)
Ground (0 V)
No Connection
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
386
MSM51V16160B/BSL
¡ Semiconductor
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–0.5 to 4.6
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
3.0
0
2.0
–0.3
Typ.
3.3
0
—
—
Max.
3.6
0
V
CC
+ 0.3
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance
(A0 - A7, A8R - A11R)
Input Capacitance
(RAS,
LCAS, UCAS, WE, OE)
Output Capacitance (DQ1 - DQ16)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
(V
CC
= 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)
Max.
5
7
7
Unit
pF
pF
pF
388
¡ Semiconductor
DC Characteristics
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Symbol
MSM51V16160B/BSL
(V
CC
= 3.3 V ±0.3 V, Ta = 0°C to 70°C)
Condition
MSM51V16160 MSM51V16160 MSM51V16160
B/BSL-50
B/BSL-60
B/BSL-70 Unit Note
Min.
V
OH
I
OH
= –2.0 mA
V
OL
I
OL
= 2.0 mA
0 V
£
V
I
£
V
CC
+ 0.3 V;
I
LI
All other pins not
under test = 0 V
DQ disable
0 V
£
V
O
£
V
CC
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
I
CC2
RAS, CAS
≥
V
CC
–0.2 V
RAS
cycling,
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
I
CC5
CAS
= V
IL
,
DQ = enable
I
CC6
RAS
cycling,
CAS
before
RAS
RAS
= V
IL
,
I
CC7
CAS
cycling,
t
PC
= Min.
t
RC
= 31.3
ms,
I
CC10
CAS
before
RAS,
t
RAS
£
1
ms
RAS
£
0.2 V,
CAS
£
0.2 V
—
400
—
400
—
400
mA
1, 4,
5
—
90
—
80
—
70
mA
1, 3
—
110
—
90
—
80
mA
1, 2
—
5
—
5
—
5
mA
1
—
110
—
90
—
80
mA
1, 2
–10
10
–10
10
–10
10
mA
2.4
0
Max.
V
CC
0.4
Min.
2.4
0
Max.
V
CC
0.4
Min.
2.4
0
Max.
V
CC
0.4
V
V
Output Leakage Current
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
Average Power
Supply Current
(Battery Backup)
Average Power
Supply Current
(CAS before
RAS
Self-Refresh)
I
LO
–10
10
–10
10
–10
10
mA
I
CC1
—
—
—
—
110
2
0.5
200
—
—
—
—
90
2
0.5
200
—
—
—
—
80
2
0.5
200
mA
1, 2
mA
mA
1
1, 5
I
CCS
—
300
—
300
—
300
mA
1, 5
Notes : 1.
2.
3.
4.
5.
I
CC
Max. is specified as I
CC
for output open condition.
The address can be changed once or less while
RAS
= V
IL
.
The address can be changed once or less while
CAS
= V
IH
.
V
CC
– 0.2 V
£
V
IH
£
V
CC
+ 0.3 V, –0.3 V
£
V
IL
£
0.2 V.
SL version.
389
stm32/stm8
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