HY23V32200
Description
preliminary
2MX16/4MX8 BIT
CMOS MASK ROM
The HY23V32200 high per formance read onl y m em or y i s or gani z ed ei th er a s 4,19 4,304 x 8bi t
(byte mode) or as 2,097,152 x16 bit(word mode) and has an access time of 70/100/120ns. It needs no external
control clock to assure simple operation, because of its asynchronous operation. It is designed to be suitable for
use in program memory of game machine, data memory and entertainments. The HY23V32200 is packaged in a
44SOP, 44TSOP-II or 48TSOP-I provides polarity programmable CE and OE buffer as user option mode.
Key features
• Switchable Organization
Byte Mode : 4,194,304 X 8 bit
Word Mode : 2,097,152 X 16 bit
• Single 3.3V power supply operation
• Access Time : 70/100/120ns (Max)
• Standby Current : 50uA(Max)
• Operating Current : 35mA(Max)
• TTL compatible inputs and outputs
• 3-State outputs for wired-OR expansion
• Programmable CE or OE pin
• Word or Byte switchable by BHE pin
• Fully static operation
• High reliability
• Package
HY23V32200M : 48pin Plastic TSOP-I(12x20mm)
HY23V32200F : 48pin Plastic TSOP-I(12x20mm)
HY23V32200T : 44pin Plastic TSOP-II(400mil)
HY23V32200S : 44pin Plastic SOP(500mil)
Pin Description
Pin
A0~A20
Q0~Q14
Q15/A-1
BHE
CE/CE
OE/OE
VCC
VSS
NC
Function
Address Inputs
Data Outputs
Output Q15(Word Mode)
LSB Address(Byte Mode)
Word/Byte Selection
Chip Enable Input
Output Enable Input
Power Supply(+3.3V)
Ground
No Connection
Pin Configuration
BHE
A16
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
A20
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CEB
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
* User selectable polarity
• CEB : CE/CEB , OEB : OE/OEB
VSS
VSS
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
VCC
NC
Q11
Q3
Q10
Q2
Q9
Q1
Q8
Q0
OEB
VSS
VSS
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
NC
NC
NC
NC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
48TSOP-I
(ROM TYPE)
37
36
35
34
33
32
31
30
29
28
27
26
25
48TSOP-I
(FLASH TYPE)
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BHE
VSS
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
Q11
Q3
Q10
Q2
Q9
Q1
Q8
Q0
OEB
VSS
CEB
A0
HY23V32200M
Rev0 Page 1 of 7
HY23V32200F
HY23V32200
Absolute Maximum Ratings
Symbol
T
A
T
STG
V
CC
V
OUT
V
IN
Parameter
Ambient Operating Temperature
Storage Temperature
Supply Voltage to Ground Potential
Output Voltage
Input Voltage
preliminary
2MX16/4MX8 BIT
CMOS MASK ROM
Rating
-10 ~ 80
-55 ~ 150
-0.3 ~ 4.5
-0.3~Vcc+0.3
-0.3~Vcc+0.3
Unit
O
C
C
O
V
V
V
Stress above those listed under “absolute maximum ratings” may cause permanent damage to the
device. These are stress ratings only. Functional operation of this device at these or any other
conditions above those indicated in the operational sections of this specification is not implied and
exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions(VCC=3.3
·
0.3V, T
A
=0~70
O
C )
Symbol
Vcc
Vss
V
IH
V
IL
Parameter
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Min
3.0
0
2.2
-0.3
Typ
3.3
0
Max
3.6
0
Vcc+0.3
0.8
Unit
V
V
V
V
DC Electrical Characteristics(VCC=3.3
·
0.3V, T
A
=0~70
O
C )
Symbol
V
OH
V
OL
I
IL
I
OL
I
CC
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Operating Supply Current
(tRC=100ns)
I
SB1
I
SB2
Standby Current(TTL)
Standby Current(CMOS)
Condition
IOH=-0.4mA
IOL=2.1mA
Min
2.4
Typ
Max
Unit
V
0.4
10
¡
V
uA
uA
mA
uA
uA
VIN=0V to VCC
¡
VOUT=0V to VCC
CEB=OEB=VIL
All Output Open
CEB=VIH, all Output Open
CEB=VCC, all Output Open
10
35
500
50
Rev0 Page 3 of 7
HY23V32200
Capacitance(T
A
=25
O
C , f=1.0MHz)
Symbol
C
I
C
O
Parameter
Input Capacitance
Output Capacitance
Condition
VIN = 0V
VOUT = 0V
preliminary
Min
2MX16/4MX8 BIT
CMOS MASK ROM
Max
10
10
Unit
pF
pF
Capacitance is periodically sampled and not 100% tested
Function Table
MODE
Standby
16bit
Operating
L/H
8bit
Operating
L/H
L
Data output
(upper 8bit)
H/L
X
High-Z
CEB/CE
H/L
OEB/OE
X
BHE
X
H
Data output
(lower 8bit)
High-Z
H
Q0 ~ Q7
Q8 ~ Q14
High-Z
Data Out
L
Active
Q15 ~A-1
POWER
Standby
Output
Disable
X
AC Characteristics(VCC=3.3
·
0.3V, T
A
=0~70
O
C )
Symbol
tRC
tACE
tAA
tAOE
tOH
tHZ
tLZ
Parameter
Min
Read cycle time
Chip enable access time
Address access time
Output enable access time
Output hold time from address change
Output or chip disable to output High-Z
Output or chip Enable to output Low-Z
10
0
20
10
70
70
70
35
0
20
10
Max
Min
100
100
100
50
0
20
Max
Min
120
120
120
60
Max
ns
ns
ns
ns
ns
ns
ns
70ns
100ns
120ns
Unit
AC Test Condition
• Input pulse level
• Input rise and fall time
• Input and output timing level
• Output load
0.4V to 2.4V
10ns
1.5V
1 TTL gate and CL=100pF(70ns product CL=30pF)
Rev0 Page 4 of 7
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