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HYM72V32M656BLT6-S

产品描述Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144
产品类别存储    存储   
文件大小205KB,共14页
制造商SK Hynix(海力士)
官网地址http://www.hynix.com/eng/
下载文档 详细参数 选型对比 全文预览

HYM72V32M656BLT6-S概述

Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144

HYM72V32M656BLT6-S规格参数

参数名称属性值
厂商名称SK Hynix(海力士)
零件包装代码MODULE
包装说明DIMM, DIMM144,32
针数144
Reach Compliance Codeunknown
ECCN代码EAR99
访问模式FOUR BANK PAGE BURST
最长访问时间6 ns
其他特性AUTO/SELF REFRESH
最大时钟频率 (fCLK)100 MHz
I/O 类型COMMON
JESD-30 代码R-XDMA-N144
长度67.6 mm
内存密度2147483648 bit
内存集成电路类型SYNCHRONOUS DRAM MODULE
内存宽度64
功能数量1
端口数量1
端子数量144
字数33554432 words
字数代码32000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织32MX64
输出特性3-STATE
封装主体材料UNSPECIFIED
封装代码DIMM
封装等效代码DIMM144,32
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
电源3.3 V
认证状态Not Qualified
刷新周期8192
座面最大高度3.8 mm
自我刷新YES
最大待机电流0.016 A
最大压摆率0.98 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装NO
技术CMOS
温度等级COMMERCIAL
端子形式NO LEAD
端子节距0.8 mm
端子位置DUAL
宽度31.75 mm

文档预览

下载PDF文档
32Mx64bits
PC100 SDRAM SO DIMM
based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh
HYM72V32M656B(L)T6 Series
DESCRIPTION
The HYM72V32M656B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits
CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy
printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB.
The HYM72V32M656B(L)T6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 256Mbytes mem-
ory. The HYM72V32M656B(L)T6 Series are fully synchronous operation referenced to the positive edge of the clock . All inputs and
outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth.
FEATURES
PC100MHz support
144pin SDRAM SO DIMM
Serial Presence Detect with EEPROM
1.25” (31.75mm) Height PCB with single sided com-
ponents
Single 3.3±0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
Programmable CAS Latency ; 2, 3 Clocks
SDRAM internal banks : four banks
Module bank : two physical bank
Auto refresh and self refresh
8192 refresh cycles / 64ms
Programmable Burst Length and Burst Type
ORDERING INFORMATION
Part No.
HYM72V32M656BT6-P
HYM72V32M656BT6-S
HYM72V32M656BLT6-P
HYM72V32M656BLT6-S
Clock
Frequency
100MHz
Internal
Bank
Ref.
Power
SDRAM
Package
Plating
Normal
100MHz
4 Banks
100MHz
Low Power
100MHz
8K
TSOP-II
Gold
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.4/Mar. 02
1

HYM72V32M656BLT6-S相似产品对比

HYM72V32M656BLT6-S HYM72V32M656BT6-S HYM72V32M656BT6-P HYM72V32M656BLT6-P
描述 Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144 Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144 Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144 Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144
厂商名称 SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士)
零件包装代码 MODULE MODULE MODULE MODULE
包装说明 DIMM, DIMM144,32 DIMM, DIMM144,32 DIMM, DIMM144,32 DIMM, DIMM144,32
针数 144 144 144 144
Reach Compliance Code unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99
访问模式 FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
最长访问时间 6 ns 6 ns 6 ns 6 ns
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
最大时钟频率 (fCLK) 100 MHz 100 MHz 125 MHz 125 MHz
I/O 类型 COMMON COMMON COMMON COMMON
JESD-30 代码 R-XDMA-N144 R-XDMA-N144 R-XDMA-N144 R-XDMA-N144
长度 67.6 mm 67.6 mm 67.6 mm 67.6 mm
内存密度 2147483648 bit 2147483648 bit 2147483648 bit 2147483648 bit
内存集成电路类型 SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
内存宽度 64 64 64 64
功能数量 1 1 1 1
端口数量 1 1 1 1
端子数量 144 144 144 144
字数 33554432 words 33554432 words 33554432 words 33554432 words
字数代码 32000000 32000000 32000000 32000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C
组织 32MX64 32MX64 32MX64 32MX64
输出特性 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装代码 DIMM DIMM DIMM DIMM
封装等效代码 DIMM144,32 DIMM144,32 DIMM144,32 DIMM144,32
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
电源 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 8192 8192 8192 8192
座面最大高度 3.8 mm 3.8 mm 3.8 mm 3.8 mm
自我刷新 YES YES YES YES
最大待机电流 0.016 A 0.016 A 0.016 A 0.016 A
最大压摆率 0.98 mA 0.98 mA 0.98 mA 0.98 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 NO NO NO NO
技术 CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 DUAL DUAL DUAL DUAL
宽度 31.75 mm 31.75 mm 31.75 mm 31.75 mm

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