Freescale Semiconductor
Technical Data
Document Number: Order from RF Marketing
Rev. 6, 10/2006
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for wideband large - signal output and driver applications
with frequencies up to 450 MHz. Devices are unmatched and are suitable for
use in industrial, medical and scientific applications.
•
Typical CW Performance at 220 MHz: V
DD
= 50 Volts, I
DQ
= 450 mA,
P
out
= 150 Watts
Power Gain — 25.5 dB
Drain Efficiency — 69%
•
Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 150 Watts
Output Power
•
Integrated ESD Protection
•
Excellent Thermal Stability
•
Facilitates Manual Gain Control, ALC and Modulation Techniques
•
225°C Capable Plastic Package
•
RoHS Compliant
MRF6V2150N
MRF6V2150NB
PREPRODUCTION
10 - 450 MHz, 150 W, 50 V
LATERAL N - CHANNEL
SINGLE - ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6V2300N
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6V2300NB
PARTS ARE SINGLE - ENDED
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
J
Value
- 0.5 +110
- 0.5 + 12
- 65 to +150
225
Unit
Vdc
Vdc
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature TBD°C, TBD W CW
Case Temperature TBD°C, TBD W CW
Symbol
R
θJC
Value
(3)
TBD
TBD
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product. (Calculator available when part is in production.)
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6V2150N MRF6V2150NB
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
TBD (Minimum)
TBD (Minimum)
TBD (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 110 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Drain - Source Breakdown Voltage
(I
D
= 75 mA, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
μAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc, f = 1.0 MHz)
Output Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc, f = 1.0 MHz)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc, f = 1.0 MHz)
Power Gain
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point, CW
(f = 220 MHz)
C
rss
C
oss
C
iss
—
—
—
1.54
94
163
—
—
—
pF
pF
pF
V
GS(th)
V
DS(on)
—
—
2.4
0.3
—
—
Vdc
Vdc
I
DSS
I
DSS
BV
DSS
I
GSS
—
—
110
—
—
—
—
—
10
10
—
10
μAdc
μAdc
Vdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50
οhm
system) V
DD
= 50 Vdc, I
DQ
= 450 mA, P
out
= 150 W, f = 220 MHz, CW
G
ps
η
D
IRL
P1dB
—
—
—
—
25.5
69
- 17
165
—
—
—
—
dB
%
dB
W
ATTENTION: The MRF6V2150N and MRF6V2150NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting)
PRIOR TO STARTING SYSTEM DESIGN
to
ensure proper mounting of these devices.
MRF6V2150N MRF6V2150NB
2
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
27
26
G
ps
, POWER GAIN (dB)
G
ps
25
24
23
22
21
20
0
50
100
150
200
P
out
, OUTPUT POWER (WATTS) CW
η
D
V
DD
= 50 Vdc
I
DQ
= 450 mA
f = 220 MHz
80
70
η
D,
DRAIN EFFICIENCY (%)
60
50
40
30
20
10
G
ps
, POWER GAIN (dB)
27
26
25
24
23
22
21
20
0
50
100
150
200
P
out
, OUTPUT POWER (WATTS) CW
V
DD
= 50 Vdc
f = 220 MHz
360 mA
405 mA
I
DQ
= 495 mA
540 mA
450 mA
Figure 1. Power Gain and Drain Efficiency
versus CW Output Power
Figure 2. Power Gain versus Output Power
−20
IMD, THIRD ORDER INTERMODULATION
DISTORTION (dBc)
−25
55
85_C
P
out
, OUTPUT POWER (dBm)
−30_C
50
25_C
−30
IM3 −U
−35
IM3 −L
V
DD
= 50 Vdc, I
DQ
= 450 mA
f1 = 220 MHz, f2 = 220.1 MHz
Two −Tone Measurements
0
20
40
60
80
100
45
−40
−45
40
V
DD
= 50 Vdc
I
DQ
= 450 mA
f = 220 MHz
15
20
25
30
35
35
10
P
out
, OUTPUT POWER (WATTS) PEP
Figure 3. Third Order Intermodulation
Distortion versus Output Power
P
in
, INPUT POWER (dBm)
Figure 4. Output Power versus Input Power
over Temperature
MRF6V2150N MRF6V2150NB
RF Device Data
Freescale Semiconductor
3
PACKAGE DIMENSIONS
B
E1
E3
2X
A
GATE LEAD
DRAIN LEAD
D1
4X
D
e
b1
aaa
M
C A
4X
D2
c1
H
DATUM
PLANE
ZONE J
2X
2X
E
F
A1
A2
E2
E5
E4
2X
A
NOTE 7
C
SEATING
PLANE
PIN 5
NOTE 8
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS
“D"
AND
“E1"
DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS
“D"
AND
“E1"
DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION
“b1"
DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE
“b1"
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE
“J"
ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
F
b1
c1
e
aaa
INCHES
MIN
MAX
.100
.104
.039
.043
.040
.042
.712
.720
.688
.692
.011
.019
.600
−−−
.551
.559
.353
.357
.132
.140
.124
.132
.270
−−−
.346
.350
.025 BSC
.164
.170
.007
.011
.106 BSC
.004
DRAIN
DRAIN
GATE
GATE
SOURCE
MILLIMETERS
MIN
MAX
2.54
2.64
0.99
1.09
1.02
1.07
18.08
18.29
17.48
17.58
0.28
0.48
15.24
−−−
14
14.2
8.97
9.07
3.35
3.56
3.15
3.35
6.86
−−−
8.79
8.89
0.64 BSC
4.17
4.32
0.18
0.28
2.69 BSC
0.10
4
D3
3
MRF6V2150N MRF6V2150NB
4
RF Device Data
Freescale Semiconductor
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E5
BOTTOM VIEW
1
2
CASE 1486 - 03
ISSUE C
TO - 270 WB - 4
PLASTIC
MRF6V2150N
STYLE 1:
PIN 1.
2.
3.
4.
5.
MRF6V2150N MRF6V2150NB
RF Device Data
Freescale Semiconductor
5
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