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Freescale Semiconductor
Technical Data
Replaced by MRF1513NT1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free
terminations.
Document Number: MRF1513
Rev. 7, 5/2006
RF Power Field Effect Transistor
MRF1513T1
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of this device
make it ideal for large - signal, common source amplifier applications in 7.5 volt
D
portable and 12.5 volt mobile FM equipment.
•
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 3 Watts
Power Gain — 11 dB
Efficiency — 55%
•
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
•
Excellent Thermal Stability
G
•
Characterized with Series Equivalent Large - Signal
Impedance Parameters
•
Broadband UHF/VHF Demonstration Amplifier Information
Available Upon Request
S
•
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
ARCHIVE INFORMATION
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C
(1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
- 0.5, +40
±
20
2
31.25
0.25
- 65 to +150
150
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
4
Unit
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1. Calculated based on the formula P
D
=
TJ – TC
R
θJC
Rating
1
Package Peak Temperature
260
Unit
°C
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF1513T1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
520 MHz, 3 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Current
(V
DS
= 40 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 12.5 Vdc, I
D
= 60
μA)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 500 mAdc)
Dynamic Characteristics
Input Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
Output Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
Functional Tests
(In Freescale Test Fixture)
Common - Source Amplifier Power Gain
(V
DD
= 12.5 Vdc, P
out
= 3 Watts, I
DQ
= 50 mA, f = 520 MHz)
Drain Efficiency
(V
DD
= 12.5 Vdc, P
out
= 3 Watts, I
DQ
= 50 mA, f = 520 MHz)
G
ps
η
10
50
11
55
—
—
dB
%
V
GS(th)
V
DS(on)
1.0
—
1.7
0.65
2.1
—
Vdc
Vdc
I
DSS
I
GSS
—
—
—
—
1
1
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
C
oss
C
rss
—
—
16.5
2.2
—
—
pF
pF
MRF1513T1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
C
iss
—
33
—
pF
V
GG
C9
C8
+
B2
C7
R4
B1
R3
C17
L1
Z7
DUT
C10
C11
C12
Z8
Z9
Z10
Z11
C13
N2
RF
OUTPUT
C16
C15
+
C14
V
DD
R2
R1
N1
RF
INPUT
C1
C2
C3
C4
C5
Z1
Z2
Z3
Z4
Z5
Z6
C6
ARCHIVE INFORMATION
C1, C13
C2, C3, C4, C10,
C11, C12
C5, C6, C17
C7, C14
C8, C15
C9, C16
L1
N1, N2
R1, R3
R2
0 to 20 pF Trimmer Capacitors
120 pF, 100 mil Chip Capacitors
10
mF,
50 V Electrolytic Capacitors
1,200 pF, 100 mil Chip Capacitors
0.1
mF,
100 mil Chip Capacitors
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
15
Ω
Chip Resistors (0805)
1 kΩ, 1/8 W Resistor
Figure 1. 450 - 520 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 450 - 520 MHz
5
470 MHz
Pout , OUTPUT POWER (WATTS)
4
3
2
1
V
DD
= 12.5 Vdc
0
0
0.15
0.05
0.10
P
in
, INPUT POWER (WATTS)
0.20
−20
0
1
IRL, INPUT RETURN LOSS (dB)
520 MHz
450 MHz 500 MHz
−5
0
V
DD
= 12.5 Vdc
−10
500 MHz
470 MHz
−15
520 MHz
450 MHz
2
3
P
out
, OUTPUT POWER (WATTS)
4
5
Figure 2. Output Power versus Input Power
Figure 3. Input Return Loss
versus Output Power
MRF1513T1
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
B1, B2
Short Ferrite Beads, Fair Rite Products
#2743021446
240 pF, 100 mil Chip Capacitors
R4
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
Z9
Z10
Z11
Board
33 kΩ, 1/8 W Resistor
0.236″ x 0.080″ Microstrip
0.981″ x 0.080″ Microstrip
0.240″ x 0.080″ Microstrip
0.098″ x 0.080″ Microstrip
0.192″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.705″ x 0.080″ Microstrip
0.342″ x 0.080″ Microstrip
0.347″ x 0.080″ Microstrip
0.846″ x 0.080″ Microstrip
Glass Teflon
®
, 31 mils, 2 oz. Copper
TYPICAL CHARACTERISTICS, 450 - 520 MHz
16
15
14
GAIN (dB)
13
12
11
10
V
DD
= 12.5 Vdc
0
1
2
3
P
out
, OUTPUT POWER (WATTS)
4
5
450 MHz
520 MHz
500 MHz
470 MHz
Eff, DRAIN EFFICIENCY (%)
70
60
50
40
30
V
DD
= 12.5 Vdc
20
0
1
2
3
P
out
, OUTPUT POWER (WATTS)
4
5
500 MHz
520 MHz
470 MHz
450 MHz
ARCHIVE INFORMATION
Figure 4. Gain versus Output Power
Figure 5. Drain Efficiency versus Output Power
6
5
4
3
2
1
450 MHz
470 MHz
500 MHz
520 MHz
70
65 520 MHz
60 470 MHz
55
50
45
600
40
0
100
200
300
400
I
DQ
, BIASING CURRENT (mA)
V
DD
= 12.5 Vdc
P
in
= 20.3 dBm
500
600
500 MHz
450 MHz
V
DD
= 12.5 Vdc
P
in
= 20.3 dBm
0
100
200
300
400
I
DQ
, BIASING CURRENT (mA)
500
Figure 6. Output Power versus Biasing Current
Figure 7. Drain Efficiency versus
Biasing Current
80
70
60
50
40
30
P
in
= 20.3 dBm
I
DQ
= 50 mA
8
9
10
11
12
13
14
15
16
450 MHz
500 MHz
470 MHz
520 MHz
5
Pout , OUTPUT POWER (WATTS)
3
2
1
0
450 MHz
520 MHz
470 MHz
500 MHz
P
in
= 20.3 dBm
I
DQ
= 50 mA
8
9
10
11
12
13
14
15
16
Eff, DRAIN EFFICIENCY (%)
4
20
V
DD
, SUPPLY VOLTAGE (VOLTS)
V
DD
, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
Figure 9. Drain Efficiency versus Supply Voltage
MRF1513T1
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Pout , OUTPUT POWER (WATTS)
Eff, DRAIN EFFICIENCY (%)
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