MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1513/D
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
The MRF1513T1 is designed for broadband commercial and industrial
applications with frequencies to 520 MHz. The high gain and broadband
performance of this device make it ideal for large–signal, common source
amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment.
D
•
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 3 Watts
Power Gain — 11 dB
Efficiency — 55%
•
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
•
Excellent Thermal Stability
G
•
Characterized with Series Equivalent Large–Signal
Impedance Parameters
•
Broadband UHF/VHF Demonstration Amplifier Information
Available Upon Request
S
•
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
MRF1513T1
520 MHz, 3 W, 12.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
Freescale Semiconductor, Inc...
CASE 466–02, STYLE 1
PLD–1.5
PLASTIC
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C (1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
40
±20
2
31.25
0.25
–65 to +150
150
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Calculated based on the formula P
D
=
TJ – TC
R
θJC
Symbol
R
θJC
Max
4
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF1513T1
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(V
DS
= 40 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 12.5 Vdc, I
D
= 60
µA)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 500 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
Output Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(V
DD
= 12.5 Vdc, P
out
= 3 Watts, I
DQ
= 50 mA, f = 520 MHz)
Drain Efficiency
(V
DD
= 12.5 Vdc, P
out
= 3 Watts, I
DQ
= 50 mA, f = 520 MHz)
G
ps
η
10
50
11
55
—
—
dB
%
C
iss
C
oss
C
rss
—
—
—
33
16.5
2.2
—
—
—
pF
pF
pF
V
GS(th)
V
DS(on)
1.0
—
1.7
0.65
2.1
—
Vdc
Vdc
I
DSS
I
GSS
—
—
—
—
1
1
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
MRF1513T1
2
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
V
GG
C9
C8
+
B2
C7
R4
B1
R3
C17
L1
Z7
DUT
C10
C11
C12
Z8
Z9
Z10
Z11
C13
N2
RF
OUTPUT
C16
C15
+
C14
V
DD
R2
R1
N1
RF
INPUT
C1
C2
C3
C4
C5
Z1
Z2
Z3
Z4
Z5
Z6
C6
B1, B2
Freescale Semiconductor, Inc...
C1, C13
C2, C3, C4, C10,
C11, C12
C5, C6, C17
C7, C14
C8, C15
C9, C16
L1
N1, N2
R1, R3
R2
Short Ferrite Beads, Fair Rite Products
#2743021446
240 pF, 100 mil Chip Capacitors
0 to 20 pF Trimmer Capacitors
120 pF, 100 mil Chip Capacitors
10
mF,
50 V Electrolytic Capacitors
1,200 pF, 100 mil Chip Capacitors
0.1
mF,
100 mil Chip Capacitors
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
15
Ω
Chip Resistors (0805)
1 kΩ, 1/8 W Resistor
R4
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
Z9
Z10
Z11
Board
33 kΩ, 1/8 W Resistor
0.236″ x 0.080″ Microstrip
0.981″ x 0.080″ Microstrip
0.240″ x 0.080″ Microstrip
0.098″ x 0.080″ Microstrip
0.192″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.705″ x 0.080″ Microstrip
0.342″ x 0.080″ Microstrip
0.347″ x 0.080″ Microstrip
0.846″ x 0.080″ Microstrip
Glass Teflon
, 31 mils, 2 oz. Copper
Figure 1. 450 – 520 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 450 – 520 MHz
5
470 MHz
Pout , OUTPUT POWER (WATTS)
4
3
2
1
V
DD
= 12.5 Vdc
0
0
0.05
0.10
0.15
P
in
, INPUT POWER (WATTS)
0.20
-20
0
1
IRL, INPUT RETURN LOSS (dB)
520 MHz
450 MHz 500 MHz
-5
0
V
DD
= 12.5 Vdc
-10
500 MHz
470 MHz
-15
520 MHz
450 MHz
2
3
P
out
, OUTPUT POWER (WATTS)
4
5
Figure 2. Output Power versus Input Power
Figure 3. Input Return Loss
versus Output Power
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF1513T1
3
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS, 450 – 520 MHz
16
15
14
GAIN (dB)
13
12
11
10
V
DD
= 12.5 Vdc
0
1
2
3
P
out
, OUTPUT POWER (WATTS)
4
5
450 MHz
520 MHz
500 MHz
470 MHz
Eff, DRAIN EFFICIENCY (%)
70
60
50
40
30
V
DD
= 12.5 Vdc
20
0
1
3
2
P
out
, OUTPUT POWER (WATTS)
4
5
500 MHz
520 MHz
470 MHz
450 MHz
Freescale Semiconductor, Inc...
Figure 4. Gain versus Output Power
Figure 5. Drain Efficiency versus Output Power
6
Pout , OUTPUT POWER (WATTS)
5
4
3
2
1
450 MHz
470 MHz
500 MHz
520 MHz
70
65 520 MHz
60 470 MHz
55
50
45
600
40
0
100
300
200
400
I
DQ
, BIASING CURRENT (mA)
V
DD
= 12.5 Vdc
P
in
= 20.3 dBm
500
600
500 MHz
450 MHz
V
DD
= 12.5 Vdc
P
in
= 20.3 dBm
0
100
200
300
400
I
DQ
, BIASING CURRENT (mA)
500
Figure 6. Output Power versus Biasing Current
Eff, DRAIN EFFICIENCY (%)
Figure 7. Drain Efficiency versus
Biasing Current
5
Pout , OUTPUT POWER (WATTS)
80
70
60
50
40
30
16
20
8
9
10
11
12
13
P
in
= 20.3 dBm
I
DQ
= 50 mA
14
15
16
450 MHz
500 MHz
470 MHz
520 MHz
3
2
1
0
450 MHz
520 MHz
470 MHz
500 MHz
P
in
= 20.3 dBm
I
DQ
= 50 mA
8
9
10
11
12
13
14
15
V
DD
, SUPPLY VOLTAGE (VOLTS)
Eff, DRAIN EFFICIENCY (%)
4
V
DD
, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
Figure 9. Drain Efficiency versus Supply Voltage
MRF1513T1
4
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
V
GG
C9
C8
+
B2
C7
R4
B1
R3
C16
L1
Z7
DUT
C10
C11
Z8
Z9
Z10
C12
N2
C15
C14
+
C13
V
DD
R2
N1
C1
C2
C3
C4
C5
R1
Z1
Z2
Z3
Z4
Z5
Z6
C6
RF
OUTPUT
RF
INPUT
B1, B2
Freescale Semiconductor, Inc...
C1, C12
C2, C3, C4,
C10, C11
C5, C6, C16
C7, C13
C8, C14
C9, C15
L1
N1, N2
R1
R2
Short Ferrite Bead, Fair Rite Products
#2743021446
330 pF, 100 mil Chip Capacitors
1 to 20 pF Trimmer Capacitors
120 pF, 100 mil Chip Capacitors
10
µF,
50 V Electrolytic Capacitors
1,200 pF, 100 mil Chip Capacitors
0.1
mF,
100 mil Chip Capacitors
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
15
Ω
Chip Resistor (0805)
1 kΩ, 1/8 W Resistor
R3
R4
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
Z9
Z10
Board
15
Ω
Chip Resistor (0805)
33 kΩ, 1/8 W Resistor
0.253″ x 0.080″ Microstrip
0.958″ x 0.080″ Microstrip
0.247″ x 0.080″ Microstrip
0.193″ x 0.080″ Microstrip
0.132″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.494″ x 0.080″ Microstrip
0.941″ x 0.080″ Microstrip
0.452″ x 0.080″ Microstrip
Glass Teflon
, 31 mils, 2 oz. Copper
Figure 10. 400 – 470 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 400 – 470 MHz
5
400 MHz
Pout , OUTPUT POWER (WATTS)
IRL, INPUT RETURN LOSS (dB)
4
3
2
1
V
DD
= 12.5 Vdc
0
0
0.02
0.04
0.06
0.08
P
in
, INPUT POWER (WATTS)
0.10
0.12
-20
0
1
440 MHz
470 MHz
-5
0
V
DD
= 12.5 Vdc
-10
440 MHz
400 MHz
-15
470 MHz
3
2
P
out
, OUTPUT POWER (WATTS)
4
5
Figure 11. Output Power versus Input Power
Figure 12. Input Return Loss
versus Output Power
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF1513T1
5
嵌入式系统
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