Technical Data
MRFIC0970/D
Rev. 0, 07/2002
3.2 V GSM GaAs
Integrated Power
Amplifier
MRFIC0970
(Scale 2:1)
Package Information
Plastic Package
Case 1308
(QFN-20)
Ordering Information
Device
MRFIC0970
Marking
0970
Package
QFN-20
The MRFIC0970 is a single supply, RF power amplifier designed for the 2.0 W GSM900
handheld radios. The device is packaged in the QFN-20 package, with exposed backside pad,
which allows excellent electrical and thermal performance through a solderable contact.
•
Target 3.2 V Characteristics:
RF Output Power: 34.5 dBm Typical
Efficiency: 50% Typical
Single Positive Supply Solution
Available in Tape and Reel only. R2 Suffix = 2500 Units per 12 mm, 13 inch Reel
•
•
MRFIC0970
2–92
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
Electrical Characteristics
D1
D2
RFin (G1)
D3
V
G1,2
ABC1,2
ABC3
GND
V
GG1,2
ABC
V
GG3
V
G3
V
ref
Figure 1. Functional Block Diagram
1 Electrical Characteristics
Table 1. Maximum Ratings
Rating
Supply Voltage
Symbol
V
D1,2,3
, V
abc
V
ref
P
in
P
out
T
C
T
stg
T
J
Value
8.0
5.0
15
38
-40 to 85
-40 to 85
150
Unit
V
V
dBm
dBm
°C
°C
°C
RF Input Power
RF Output Power
Operating Case Temperature Range
Storage Temperature Range
Junction Temperature
NOTES:
1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Electrical Characteristics
or Recommended Operating Conditions tables.
2 ESD (electrostatic discharge) immunity meets Human Body Model (HBM)
≤250
V and
Machine Model (MM)
≤60
V. This device is rated Moisture Sensitivity Level (MSL) 1.
Additional ESD data available upon request.
Table 2. Recommended Operating Conditions
Characteristic
Supply Voltage
Symbol
V
D1,2,3
V
abc
V
ref
P
in
Min
2.8
0
0.04
5.0
Typ
-
-
-
-
Max
5.5
5.5
1.8
10
Unit
Vdc
V
V
dBm
Input Power
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
MRFIC0970
2–93
Electrical Characteristics
Table 3. Electrical Specifications
(V
D1,2,3
= 3.2 V, V
abc
= 2.6 V, P
in
= 5.0 dBm, Peak measurement at 12.5% duty cycle, 4.6 ms period, T
A
= 25°C, unless otherwise
noted.)
Characteristic
Frequency Range
Output Power
Power Added Efficiency
Minimum Output Power (V
ref
= 0.04, V
abc
= 2.6 V)
Power Control Slope (V
ref
= 0.1 to 1.8 V,
∆V
ref
= 0.01 V)
Bleed thru Power (P
in(fo)
≤
-12dBm, V
ref
= 0.04,
V
abc
= 10 k load)
RF Leakage Current (I
DD1
+ I
DD2
+I
DD3,
Pin (f
o
)
≤5.0
dBm)
(V
abc
= 10 k load, V
ref
= 0.04 V)
Output Power Switching Speed (± step input of V
ref
RF
Pout within 1.0 dB of final value)
Input Return Loss
Noise Power in Rx band
925 to 935 MHz
935 to 960 MHz
Stability-Spurious Output (Load VSWR 6:1 all phase
angles, Adjust V
D1, 2&3
for specified power)
Load Mismatch Stress (Load VSWR = 10:1 all phase
angles, 5 seconds, Adjust V
D1, 2&3
for specified power)
|S11|
NP
-
-
P
spur
-
-
-
-
-73
-85
-30
dBc
Symbol
BW
P
out
PAE
Min
880
34.5
50
-
-
Typ
-
-
-
-
-
Max
915
-
-
-17
50:1
Unit
MHz
dBm
%
dBm
RFVrms
/V
ref
-
-
-36
dBm
-
-
35
mA
-
-
1.0
µs
dB
dBm
-
-
6.0
No Degradation in Output Power
Before & After Test
MRFIC0970
2–94
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
Pin Connections
2 Pin Connections
D1
20
D2 1
N.C. 2
N.C. 3
N.C. 4
N.C. 5
6
7
8
9
10
S1/
RFin
N.C. GND N.C. (G1)
19
18
17
16
15 V
G1,2
14 V
GG1,2
13 ABC
12 V
GG3
11 V
G3
D3/ D3/ D3/ D3/ N.C.
RF RF RF RF
OUT OUT OUT OUT
Figure 2. Pin Connections
3 Typical Performance Characteristics
35.6
P
out
, OUTPUT POWER (dBm)
35.4
35.2
35
34.8
34.6
34.4
34.2
880
T
A
= -40°C
25°C
P
in
= 5.0 dBm
V
DD
= 3.2 V
V
ref
= 1.8 V
85°C
885
890
895
900
905
f, FREQUENCY (MHz)
910
915
Figure 3. Output Power versus Frequency
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
MRFIC0970
2–95
Typical Performance Characteristics
38
37.5
P
out
, OUTPUT POWER (dBm)
V
DD
= 5.5 V
P
in
= 5.0 dBm
T
A
= 25°C
V
ref
= 1.8 V
3.2 V
37
36.5
36
35.5
35
34.5
34
33.5
880
885
890
2.8 V
895
900
905
f, FREQUNCY (MHz)
910
915
Figure 4. Output Power versus Frequency
65
PAE, POWER ADDED EFFICIENCY (%)
60
T
A
= -40°C
25°C
55
P
in
= 5.0 dBm
V
DD
= 3.2 V
V
ref
= 1.8 V
885
890
895
900
905
f, FREQUENCY (MHz)
85°C
50
45
880
910
915
Figure 5. Power Added Efficiency versus Frequency
65
PAE, POWER ADDED EFFICIENCY (%)
60
55
50
45
40
35
880
P
in
= 5.0 dBm
T
A
= 25°C
V
ref
= 1.8 V
V
DD
= 2.8 V
3.2 V
5.5 V
885
890
895
900
905
f, FREQUENCY (MHz)
910
915
Figure 6. Power Added Efficiency versus Frequency
MRFIC0970
2–96
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
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