1N66xxUB Series
Silicon Switching Diode
Rev. V4
Features
•
JAN, JANTX, JANTXV and JANS Qualification is
available per MIL-PRF-19500/578/609 (see part
nomenclature for all available options)
•
Surface Mount Equivalent of JEDEC registered
1N6638
-
1N6643
•
Very Low Capacitance
•
Very Fast Switching Speeds with Minimal
Reverse Recovery Times
•
Unidirectional as well as Doubler, Common
Anode and Common Cathode Polarities are
Available
•
RoHS Compliant by Design
Top View
Bottom View
Description
The 1N66xxUB Series of switching/signal diodes
feature ceramic bodied construction for military
grade products per MIL-PRF-19500/578/609. These
small, low capacitance diodes, with very fast
switching speeds, are featured in a surface mount
UB package with various polarities available.
These devices are ideally suited for high frequency
data lines, RS-232 & RS-422 interface networks,
and Ethernet 10 Base T, LAN & computers.
Electrical Specifications
Part #
(add UB, UBCA,
UBCC, UBD as per
part nomenclature)
1N6638
1N6639
1N6640
1N6641
1N6642
1N6643
V
BR
@ I
R
V
RWM
V
FR
/ t
FR
@ I
F
= 200 mA
V(pk)
150
100
75
75
100
75
µA
100
10
10
10
100
100
V(pk)
125
75
50
50
75
50
V(pk)
5
5
5
5
5
5
ns
20
10
10
10
20
20
C
T
1
V
R
= 0.0 V
pF
2.5
2.5
2.5
3.0
5.0
5.0
C
T
2
V
R
= 1.5 V
pF
2.0
—
—
—
2.8
2.8
trr
I
R
= 10 mA, I
F
= 10 mA
ns
4.5
4
4
5
5
6
1
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1N66xxUB Series
Silicon Switching Diode
Rev. V4
Electrical Specifications
Part #
I
R
V
R
= 20 V V
R
= V
RWM
,
T
A
= +150° T
A
= +150°
C
C
µA
50
—
—
—
50
75
µA
100
90
90
90
100
100
V
Min.
—
—
0.54
0.76
0.82
0.87
0.87
—
—
V
Max.
1.1
0.8
1.2
0.62
0.86
0.92
1.0
1.1
0.8
1.2
0.8
1.2
V
F
@ I
F
T
A
=
+150°C
V
Max.
-
0.65
T
A
=
-55°C
V
Max.
1.2
—
1.3
—
—
—
1.1
1.2
—
1.2
—
1.4
mA
(pulsed)
200
10
500
1
50
100
200
200
10
100
10
100
I
F
(add UB, UBCA, V
R
= 20 V V
R
= V
RWM
UBCC, UBD as
per part nomen-
clature)
nA
nA
1N6638
1N6639
1N6640
1N6641
1N6642
1N6643
35
—
—
—
25
50
500
100
100
100
500
500
—
—
0.8
—
0.8
—
Absolute Maximum Ratings @ +25°C (unless otherwise specified)
Part #
(add UB, UBCA,
UBCC, UBD as per
part nomenclature)
1N6638
1N6639
1N6640
1N6641
1N6642
1N6643
1. See derating curve.
Breakdown
Voltage
150
100
75
75
100
75
Working Peak
Reverse Voltage
125
75
50
50
75
50
Average Rectified
Current
@ T
A
= +75°C
1
Non-Repetitive
Sinusoidal Surge
Current
(tp = 8.3 ms)
Junction &
Storage
Temperature
Range
300 mA
2.5 A (pk)
-65°C
to +200°C
2
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1N66xxUB Series
Silicon Switching Diode
Rev. V4
Thermal Characteristics
2
Characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Solder Pad
2. See thermal impedance curve.
Symbol
R
θJA
R
θJSP
Max. Value
325°C/W
100°C/W
Temperature
-
Current Derating
Sinewave Operation Maximum Io Rating (mA)
350
300
250
200
150
100
50
0
Thermal Impedance
1000
Theta (C/W)
25
50
75
100
125
150
175
200
225
100
10
1
0
0.0001
0.01
1
100
Ambient Temperature (°C)
Sinewave Operation 50% Duty Cycle,
R
θJA
(PCB) = 325°C/W.
Maximum Finish-Alloy Temperature = 175°C
Time (s)
3
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1N66xxUB Series
Silicon Switching Diode
Rev. V4
Parts Nomenclature
JAN
1N66xx
UB CA
Outline Drawing (UB)
Dimensions
3,4,5,6
Symbol
BH
BL
BW
CL
CW
LL1
LL2
LS
1
LS
2
LW
r
r
1
r
2
Inches
Min.
0.046
0.115
0.085
-
-
0.022
0.017
0.035
0.071
0.016
-
-
-
Max.
0.056
0.128
0.108
0.128
0.108
0.038
0.035
0.039
0.079
0.024
0.008
0.012
0.022
Millimeters
Min.
1.17
2.92
2.16
-
-
0.56
0.43
0.89
1.81
0.41
-
-
-
Max.
1.42
3.25
2.74
3.25
2.74
0.96
0.89
0.99
2.01
0.61
0.203
0.305
0.559
Case: Ceramic
Thermals: Gold plating over nickel under plate.
Tape & Reel option: Standard per EIA-4180. Consult factory for
quantities.
Weight: <0.04 grams
4
3. Dimensions are in inches. Millimeters are given for general
information only.
4. Hatched areas on package denote metallized areas.
5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 =
Shielding connected to the lid.
6. In accordance with ASME Y14.5M, diameters are equivalent to
ɸx symbology.
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1N66xxUB Series
Silicon Switching Diode
Rev. V4
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5
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Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
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