Power Bipolar Transistor, 0.75A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 零件包装代码 | TO-220AB |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 外壳连接 | ISOLATED |
| 最大集电极电流 (IC) | 0.75 A |
| 集电极-发射极最大电压 | 300 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 120 |
| JEDEC-95代码 | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 2 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 30 MHz |
| Base Number Matches | 1 |
| 2SD1263AP | 2SD1263AR | 2SD1263Q | 2SD1263R | |
|---|---|---|---|---|
| 描述 | Power Bipolar Transistor, 0.75A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 | Power Bipolar Transistor, 0.75A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 | Power Bipolar Transistor, 0.75A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 | Power Bipolar Transistor, 0.75A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 |
| 零件包装代码 | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknow | unknow | unknow | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| 最大集电极电流 (IC) | 0.75 A | 0.75 A | 0.75 A | 0.75 A |
| 集电极-发射极最大电压 | 300 V | 300 V | 250 V | 250 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 120 | 40 | 70 | 40 |
| JEDEC-95代码 | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | NPN | NPN | NPN | NPN |
| 最大功率耗散 (Abs) | 2 W | 2 W | 2 W | 2 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 30 MHz | 30 MHz | 30 MHz | 30 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 |
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