NDP5060L概述

26A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

NDP5060L规格参数

	NDP5060L	NDB5060L
描述	26A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN	26A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
厂商名称	Texas Instruments(德州仪器)	Texas Instruments(德州仪器)
包装说明	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknown
ECCN代码	EAR99	EAR99
雪崩能效等级（Eas）	100 mJ	100 mJ
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	60 V	60 V
最大漏极电流 (ID)	26 A	26 A
最大漏源导通电阻	0.05 Ω	0.05 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-220AB	TO-263AB
JESD-30 代码	R-PSFM-T3	R-PSSO-G2
元件数量	1	1
端子数量	3	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	SMALL OUTLINE
极性/信道类型	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	78 A	78 A
认证状态	Not Qualified	Not Qualified
表面贴装	NO	YES
端子形式	THROUGH-HOLE	GULL WING
端子位置	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON

器件捷径: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ