Data Sheet
NE3509M14
N-Channel GaAs HJ-FET, L to C Band Low Noise
FEATURES
•
Super low noise figure and high associated gain high isolation
NF = 0.4 dB TYP., G
a
= 18.5 dB TYP. @ V
DS
= 2 V, I
D
= 10 mA, f = 2 GHz
•
4-pin lead-less minimold (M14, 1208 PKG) package
R09DS0011EJ0100
Rev.1.00
Amplifier
Jan 21, 2011
APPLICATIONS
•
Satellite radio (SDARS, DMB, DAB, etc.) antenna LNA
•
GPS antenna LNA
•
Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
NE3509M14-T3
Order Number
NE3509M14-T3-A
Package
Quantity
Marking
zR
Supplying Form
10 kpcs/reel
4-pin lead-less
minimold
(M14, 1208 PKG)
(Pb-Free)
•
Embossed tape 8 mm wide
•
Pin 1 (Drain), Pin 4 (Source)
face the perforation side of
the tape
Remark
To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3509M14
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Note
Channel Temperature
Storage Temperature
Note:
Symbol
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
Ratings
4.0
−3.0
I
DSS
200
150
+150
−65
to +150
Unit
V
V
mA
μ
A
mW
°C
°C
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PWB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0011EJ0100 Rev.1.00
Jan 21, 2011
Page 1 of 10
NE3509M14
RECOMMENDED OPERATING RANGE (T
A
= +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
V
DS
I
D
P
in
MIN.
−
−
−
TYP.
2
10
−
MAX.
3
20
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Trans conductance
Noise Figure
Associated Gain
Symbol
I
GSO
I
DSS
V
GS (off)
g
m
NF
G
a
Test Conditions
V
GS
=
−3.0
V
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 2 V, I
D
= 50
μ
A
V
DS
= 2 V, I
D
= 10 mA
V
DS
= 2 V, I
D
= 10 mA, f = 2 GHz
MIN.
−
30
−0.25
80
−
16.5
TYP.
0.5
45
−0.50
−
0.4
18.5
MAX.
10
60
−0.75
−
0.7
−
Unit
μ
A
mA
V
mS
dB
dB
STANDARD CHARACTERISTICS FOR REFERENCE (T
A
= +25°C, unless otherwise
specified)
Parameter
Gain 1 dB Compression Output
Power
Symbol
P
O (1 dB)
Test Conditions
f = 2 GHz,
V
DS
= 2 V, I
D
= 10 mA set (non-RF)
Reference Value
+11
Unit
dBm
R09DS0011EJ0100 Rev.1.00
Jan 21, 2011
Page 2 of 10
NE3509M14
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
Total Power Dissipation P
tot
(mW)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50
45
Drain Current I
D
(mA)
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
200
V
DS
= 2 V
40
35
30
25
20
15
10
5
0
–1.0
150
100
50
0
50
100
150
200
250
–0.8
–0.6
–0.4
–0.2
0
Ambient Temperature T
A
(°C)
Gate to Source Voltage V
GS
(V)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
2.0
Minimum Noise Figure NF
min
(dB)
20
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
5
10
NF
min
G
a
18
14
12
10
8
6
4
V
DS
= 2 V
2
I
D
= 10 mA
0
15
Associated Gain G
a
(dB)
Drain Current I
D
(mA)
80
16
60
V
GS
= 0 V
–0.1
V
–0.2
V
40
20
–0.3
V
–0.4
V
–0.5
V
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Frequency f (GHz)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
2.0
20
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN VOLTAGE
2.0
Minimum Noise Figure NF
min
(dB)
Minimum Noise Figure NF
min
(dB)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
5
10
15
20
25
NF
min
G
a
18
Associated Gain G
a
(dB)
16
f = 2 GHz, I
D
= 10 mA
G
a
20
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
1.5
2.0
2.5
3.0
Drain Voltage V
DS
(V)
NF
min
18
14
12
10
8
6
4
2
0
3.5
Associated Gain G
a
(dB)
16
14
12
10
8
6
4
f = 2 GHz
2
V
DS
= 2 V
0
30
35 40
Drain Current I
D
(mA)
Remark
The graphs indicate nominal characteristics.
R09DS0011EJ0100 Rev.1.00
Jan 21, 2011
Page 3 of 10
NE3509M14
MAG, MSG, K FACTOR vs. FREQUENCY
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, ISOLATION
vs. FREQUENCY
25
Insertion Power Gain |S
21
|
2
(dB)
25
5.0
V
DS
= 2 V,
4.5
I
D
= 10 mA
4.0
3.5
K factor
0
V
DS
= 2 V,
I
D
= 10 mA
20
20
|S
21
|
15
2
–5
Isolation |S
12
|
2
(dB)
15
MSG
10
MAG
5
K factor
0
0
5
10
15
Frequency f (GHz)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
–10
10
|S
12
|
2
–15
5
–20
0
0
5
10
15
Frequency f (GHz)
–25
20
Remark
The graphs indicate nominal characteristics.
R09DS0011EJ0100 Rev.1.00
Jan 21, 2011
Page 4 of 10
NE3509M14
OUTPUT POWER, G
p
, I
D
, I
G
vs. INPUT POWER
25
f = 2 GHz,
V
DS
=
2 V,
I
D
= 10 mA set, P
O (1 dB)
optimize
20
G
p
15
Output Power P
out
(dBm)
Power Gain G
P
(dB)
80
70
60
50
P
out
40
30
I
D
20
10
I
G
0
15
Drain Current I
D
(mA)
Gate Current I
G
(mA)
Drain Current I
D
(mA)
Gate Current I
G
(mA)
10
5
0
–5
–10
–15
–25
–20
–15
–10
–5
0
5
10
Input Power P
in
(dBm)
OUTPUT POWER, IM
3
, I
D
, I
G
vs. INPUT POWER
Output Power P
out (2 tone)
(dBm)
3rd Order Intermodulation Distortion IM
3 (1 tone)
(dBm)
30
20
10
0
–10
–20
–30
–40
–50
–60
–70
–25
f1 = 2 000 MHz
f2 = 2 001 MHz
P
out
100
90
80
70
IM
3 (L)
60
50
V
DS
=
2 V, I
D
= 10 mA set,
P
O (1 dB)
optimize
40
30
I
D
I
G
20
10
5
10
0
15
IM
3 (H)
–20
–15
–10
–5
0
Input Power P
in (2 tone)
(dBm)
Remark
The graphs indicate nominal characteristics.
R09DS0011EJ0100 Rev.1.00
Jan 21, 2011
Page 5 of 10
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