PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE856M13
FEATURES
•
NEW MINIATURE M13 PACKAGE:
– Small transistor outline –
1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
LOW NOISE FIGURE:
NF = 1.4 dB at 1 GHz
HIGH COLLECTOR CURRENT:
I
C
MAX = 100 mA
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M13
+0.1
0.5 –0.05
+0.1
0.15 –0.05
1
0.35
0.3
2
•
•
XX
1
+0.1
1.0 –0.05
3
0.7
0.35
2
+0.1
0.15 –0.05
0.2
3
+0.1
0.2 –0.05
DESCRIPTION
The NE856M13 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/flat lead style "M13" package
is ideal for today's portable wireless applications. The NE856
is also available in chip, Micro-x, and eight different low cost
plastic surface mount package styles.
0.1
0.1
0.2
0.5±0.05
+0.1
0.125 –0.05
Bottom View
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE2
I
CBO
I
EBO
C
RE3
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
dB
dB
µA
µA
pF
0.7
7
80
MIN
3
NE856M13
2SC5614
M13
TYP
4.5
1.4
10
145
1
1
1.5
2.5
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Forward Current Gain at V
CE
= 3 V, I
C
= 7 mA
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories
NE856M13
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T2
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
20
12
3
100
140
150
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm
2
X 1.2 mm glass epoxy board.
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
500
V
CE
= 10 V
FORWARD CURRENT GAIN vs.
COLLECTOR CURRENT
DC Forward Current Gain, h
FE
2
4
6
8
10
12
300
200
Collector Current, I
C
(mA)
80
60
100
70
50
30
20
40
20
10
0
1
2
3
5
7
10
20
30
50
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
2/09/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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