PRELIMINARY DATA SHEET
GaAs MES FET
15 W C-BAND POWER GaAs FET NEZ SERIES
15 W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NEZ Series of microwave power GaAs FETs offer
high output power, high gain and high efficiency at C-band
for microwave and satellite communications.
Internal input and output circuits matched to 50
Ω
are
designed to provide good flatness of gain and output
power in allocated band.
To reduce the thermal resistance, the device has a
PHS (Plated Heat Sink) structure.
NEC’s strigent quality assurance and test procedures
guarantee the highest reliability and performance.
PACKAGE DIMENSIONS (unit: mm)
0.5 ±0.1
2.5 MIN.
C1.0 4PLACES
R1.2 4PLACES
SOURCE
GATE
2.4 5.6
17.4 ±0.2
8.0 ±0.1
DRAIN
20.4 ±0.2
2.5 MIN.
SELECTION CHART
NEZ PART NUMBER
NEZ3642-15D, 15DD
NEZ4450-15D, 15DD
NEZ5964-15D, 15DD
NEZ6472-15D, 15DD
NEZ7785-15D
FREQUENCY BAND (GHz)
3.6 to 4.2
4.4 to 5.0
20.4 ±0.3
16.0
5.0 MAX.
0.1
–0.05
2.4 ±0.2
1.6
5.9 to 6.45
6.4 to 7.2
7.7 to 8.5
+0.1
0.2 MAX.
16.0
FEATURES
• Internally matched to 50
Ω
• High power output
• High linear gain
• High reliability
• Low distortion
Document No. P10982EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
15 W C-BAND Po GaAs FET NEZ SERIES
NEZ-15D/15DD
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
V
DS
V
GS
V
GD
I
D
I
G
P
T
*
T
ch
T
stg
RATINGS
15
–12
–18
18
100
100
175
–65 to +175
UNIT
V
V
V
A
mA
W
˚C
˚C
*
T
C
= 25 ˚C
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
Saturated Drain Current
SYMBOL
I
DSS
Part No.
NEZ-15D
NEZ-15DD
NEZ-15D
NEZ-15DD
Trans-Conductance
gm
NEZ-15D
NEZ-15DD
Gate to Drain Voltage
B
VGDO
NEZ-15D
NEZ-15DD
NEZ-15D
NEZ15DD
20
22
–
V
I
GD
= 60 mA
–
5200
–
mS
V
DS
= 2.5 V, I
DS
= 4 A
MIN.
4.0
TYP.
9.2
MAX.
14.0
UNIT
A
TEST CONDITIONS
V
DS
= 2.5 V, V
GS
= 0 V
Pinch-off Voltage
V
P
–3.5
–2.2
–0.5
V
V
DS
= 2.5 V, I
DS
= 60 mA
Thermal Resistance
R
th
–
1.3
1.5
˚C/W
Channel to Case
2
15 W C-BAND Po GaAs FET NEZ SERIES
15W PERFORMANCE SPECIFICATIONS (T
A
= 25 ˚C, Zs = ZL = 50
Ω
)
∆G
L
(dB)
*3,4
p1dB
PART NUMBER
(dBm)
*1
G
L
(dB)
I
DS
(A)
*2
IM
3
(dBc)
*4
η
add
(%)
V
DS
(V)
10
10
10
10
10
10
10
10
10
I
DS
*5
(A)
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
TEST CONDITIONS
FREQUENCY
BAND
(GHz)
3.6 to 4.2
3.6 to 4.2
4.4 to 5.0
4.4 to 5.0
5.9 to 6.45
5.9 to 6.45
6.4 to 7.2
6.4 to 7.2
7.7 to 8.5
IM
3
TEST
FREQ.
(GHz)*6
–
4.2
–
5.0
–
6.45
–
7.2
–
MIN. TYP. MIN. TYP. TYP. MAX. MAX. TYP. MAX. TYP.
NEZ3642-15D
41.5
42.5
42.5
42.5
42.5
42.5
42.5
42.5
42.5
42.5
9.0
9.0
9.0
9.0
8.0
8.0
6.5
6.5
6.0
10.0
10.0
10.0
10.0
9.0
9.0
7.5
7.5
7.0
4.8
4.8
4.8
4.8
4.8
4.8
4.8
4.8
4.8
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
–
1.0
–
1.0
–
1.0
–
1.0
–
–
–
–
–
–
–
–
–
–
–
–42
–
–42
–
–42
–
–42
–
35
35
35
35
33
33
31
31
27
NEZ3642-15DD 41.5
NEZ4450-15D
41.5
NEZ4450-15DD 41.5
NEZ5964-15D
41.5
NEZ5964-15DD 41.5
NEZ6472-15D
41.5
NEZ6472-15DD 41.5
NEZ7785-15D
41.5
Notes *1
Output power at 1 dB gain compression point
*2
I
DS
values are specified at P1dB point.
*3
Gain flatness
*4
Applies to –15DD option only
*5
RF OFF
*6
IM
3
test conditions:
∆
f = 10 MHz, 2 tones test, P
O
= 31.5 dBm (single carrier level)
MAXIMUM OPERATING LIMITS
Rg max. (Ω)
50
V
DS
max. (V)
10
Rg max is the maximum series resistance between the gate supply and the FET gate.
3
15 W C-BAND Po GaAs FET NEZ SERIES
TYPICAL CHARACTERISTICS
(T
A
= 25 ˚C)
NEZ3642-15D/15DD
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
110
100
P
T
- Power Dissipation - W
90
80
70
60
50
40
30
20
10
0
0
25
Infinite Heat sink
I
D
(A)
6
P
out
(dBm)
45
OUTPUT POWER vs. INPUT POWER
P
out
–15D/–15DD
5
40
Test Conditions:
Freq = 3.9 (GHz),
V
DS
= 10.0 (V),
I
DS
= 4.0 (A)
P
out
: P
in
= 35.0 (dBm),
G
L
: P
in
= 24.0 (dBm),
R
g
= 50 (Ω)
I
D
35
EFF
(%)
50
40
30
20
10
0
4
30
3
EFF
50 75 100 125 150 175 200
T
C
- Case Temperature - ˚C
20
25
30
P
in
- Input Power - dBm
35
NEZ4450-15D/15DD
P
out
(dBm)
45
OUTPUT POWER vs. INPUT POWER
P
out
NEZ5964-15D/15DD
P
out
(dBm)
45
OUTPUT POWER vs. INPUT POWER
Test Conditions:
Freq = 6.2 (GHz),
V
DS
= 10.0 (V),
I
D
= 4.0 (A)
R
g
= 50 (Ω)
I
D
(A)
6
40
5
35
4
Test Conditions:
Freq = 4.7 (GHz),
V
DS
= 10.0 (V),
I
DS
= 4.0 (A)
P
out
: P
in
= 37.0 (dBm),
G
L
: P
in
= 26.0 (dBm),
R
g
= 50 (Ω)
I
D
(A)
5
P
out
40
I
D
I
D
4
35
EFF
(%)
50
40
30
20
10
0
3
30
2
EFF
(%)
50
40
30
20
10
0
EFF
30
3
EFF
20
25
30
35
P
in
- Input Power - dBm
25
30
35
P
in
- Input Power - dBm
40
4
15 W C-BAND Po GaAs FET NEZ SERIES
NEZ6472-15D/15DD
P
out
(dBm)
45
OUTPUT POWER vs. INPUT POWER
P
out
NEZ7785-15D/15DD
P
out
(dBm)
I
D
(A)
6 40
OUTPUT POWER vs. INPUT POWER
Test Conditions:
Freq = 8.1 (GHz),
V
DS
= 10.0 (V),
I
DS
= 4.0 (A)
P
out
: P
in
= 38.5 (dBm)
G
L
: P
in
= 26.0 (dBm)
R
g
= 50 (Ω)
I
D
(A)
5
Test Conditions:
Freq = 6.8 (GHz),
V
DS
= 10.0 (V),
I
D
= 4.0 (A)
R
g
= 50 (Ω)
P
out
40
4
35
3
30
2
EFF
(%)
50
40
30
20
10
0
4 30
I
D
5 35
I
D
EFF
EFF
20
25
30
35
P
in
- Input Power - dBm
3 25
EFF
(%)
50
40
30
20
10
0
30
35
25
P
in
- Input Power - dBm
5
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