BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
Sillicon planar zener diodes
Low profile surface-mount package
Zener and surge current specification
Low leakage current
Excellent stability
High temperature soldering: 260 °C/10 s
at terminals
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
•
•
•
•
•
•
17249
Mechanical Data
Case:
DO-219AB (SMF)
Weight:
approx. 15 mg
Packaging codes/options:
GS18/10 k per 13 " reel (8 mm tape), 10 k/box
GS08/3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Test condition
T
L
= 80 °C
T
A
= 25 °C
100 µs square pulse
2)
Non-repetitive peak pulse power
dissipation
10/1000
μs
waveform (BZD27-C7V5P to BZD27-C100P)
2)
10/1000
μs
waveform (BZD27-C110P to BZD27-C200P)
2)
Notes
1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
2)
T
J
= 25 °C prior to surge
Symbol
P
tot
P
tot
P
ZSM
P
RSM
P
RSM
Value
2.3
0.8
1)
300
150
100
Unit
W
W
W
W
W
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
1)
Thermal resistance junction to lead
Maximum junction temperature
Storage temperature range
Note
1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
Test condition
Symbol
R
thJA
R
thJL
T
j
T
S
Value
180
30
150
- 55 to + 150
Unit
K/W
K/W
°C
°C
Document Number 85810
Rev. 2.0, 23-Mar-10
For technical support, please contact:
DiodesSSP@vishay.com
www.vishay.com
1
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Electrical Characteristics
Maximum V
F
= 1.2 V, at I
F
= 0.2 A (T
J
= 25 °C, unless otherwise specified)
Working voltage
1)
Partnumber
Marking
code
V
Z
at I
ZT
V
min.
BZD27C3V6P
BZD27C3V9P
BZD27C4V3P
BZD27C4V7P
BZD27C5V1P
BZD27C5V6P
BZD27C6V2P
BZD27C6V8P
BZD27C7V5P
BZD27C8V2P
BZD27C9V1P
BZD27C10P
BZD27C11P
BZD27C12P
BZD27C13P
BZD27C15P
BZD27C16P
BZD27C18P
BZD27C20P
BZD27C22P
BZD27C24P
BZD27C27P
BZD27C30P
BZD27C33P
BZD27C36P
BZD27C39P
BZD27C43P
BZD27C47P
BZD27C51P
BZD27C56P
BZD27C62P
BZD27C68P
BZD27C75P
BZD27C82P
BZD27C91P
BZD27C100P
BZD27C110P
BZD27C120P
BZD27C130P
BZD27C150P
BZD27C160P
BZD27C180P
BZD27C200P
Note
1)
Pulse test: tp
≤
5 ms
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
E0
E1
E2
E3
E4
E5
E6
E7
E8
E9
F0
F1
F2
F3
F4
F5
F6
F7
F8
F9
G0
G1
G2
G3
G4
G5
G6
G7
G8
G9
H0
H1
H2
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
153
168
188
max.
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
87
96
106
116
127
141
156
171
191
212
typ.
4
4
4
3
3
2
2
1
1
1
2
2
4
4
5
5
6
6
6
6
7
7
8
8
21
21
24
24
25
25
25
25
30
30
60
60
80
80
110
130
150
180
200
Differential
resistance
r
dif
at I
Z
Ω
max.
8
8
7
7
6
4
3
3
2
2
4
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
350
400
500
min.
- 0.14
- 0.14
- 0.12
- 0.1
- 0.08
- 0.04
- 0.01
0
0
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
Temperature
coefficient
α
Z
at I
Z
%/°C
max.
- 0.04
- 0.04
- 0.02
0
0.02
0.04
0.06
0.07
0.07
0.08
0.08
0.09
0.1
0.1
0.1
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
Test
current
I
ZT
mA
Reverse current at
reverse voltage
I
R
μA
max.
100
50
25
10
5
10
5
10
50
10
10
7
4
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
3
3
3
5
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
V
R
V
www.vishay.com
2
For technical support, please contact:
DiodesSSP@vishay.com
Document Number 85810
Rev. 2.0, 23-Mar-10
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Electrical Characteristics
Maximum V
F
= 1.2 V, at I
F
= 0.2 A (T
J
= 25 °C, unless otherwise specified)
Rev.
breakdown Test current
voltage
Part number
V
(BR)R
at
I
test
V
min.
BZD27C7V5P
BZD27C8V2P
BZD27C9V1P
BZD27C10P
BZD27C11P
BZD27C12P
BZD27C13P
BZD27C15P
BZD27C16P
BZD27C18P
BZD27C20P
BZD27C22P
BZD27C24P
BZD27C27P
BZD27C30P
BZD27C33P
BZD27C36P
BZD27C39P
BZD27C43P
BZD27C47P
BZD27C51P
BZD27C56P
BZD27C62P
BZD27C68P
BZD27C75P
BZD27C82P
BZD27C91P
BZD27C100P
BZD27C110P
BZD27C120P
BZD27C130P
BZD27C150P
BZD27C160P
BZD27C180P
BZD27C200P
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
153
168
188
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
I
test
mA
min.
0
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
Temperature coefficient
α
Z
at I
test
%/°C
max.
0.07
0.08
0.08
0.09
0.1
0.1
0.1
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
Clamping voltage
at I
RSM 1)
A
13.3
12.2
11.3
10.1
9.6
8.8
7.9
7.2
6.6
5.9
5.3
4.8
4.4
3.9
3.6
3.2
3
2.8
2.5
2.3
2.1
1.9
1.7
1.6
1.5
1.3
1.2
1.1
0.72
0.65
0.59
0.53
0.48
0.43
0.39
Reverse current at
stand-off voltage
I
R
μA
max.
1500
1200
100
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
at V
WM
V
V
C
V
max .
11.3
12.3
13.3
14.8
15.7
17
18.9
20.9
22.9
25.6
28.4
31
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114
126
139
139
152
169
187
205
229
254
Note
1)
Non-repetitive peak reverse current in accordance with "IEC 60-1, section 8" (10/1000 ms pulse); see fig. 5
Document Number 85810
Rev. 2.0, 23-Mar-10
For technical support, please contact:
DiodesSSP@vishay.com
www.vishay.com
3
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
P
RSM
- Max. Pulse Power Dissipation (W)
10
160
140
120
100
80
60
40
20
0
0
50
100
150
200
I
F
- Forward Current (A)
Max.
V
F
Typ.
V
F
1
0.1
0.6
17411
0.8
1.0
1.2
1.4
1.6
V
F
- Forward
Voltage
(V)
17414
V
Znom
- Zener
Voltage
(V)
Figure 1. Forward Current vs. Forward Voltage
Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage
10 000
C
D
- Typ. Junction Capacitance (pF)
C5V1P
1000
C6V8P
C12P
C18P
I
RSM
(%)
100
90
t
1
= 10
µs
t
2
= 1000
µs
50
100
C27P
C200P
10
0
0.5
1.0
1.5
2.0
2.5
3.0
17415
C51P
10
t
1
t
2
t
17412
V
R
- Reverse
Voltage
(V)
Figure 2. Typ. Diode Capacitance vs. Reverse Voltage
Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition
3.0
P
tot
- Power Dissipation (W)
2.5
2.0
1.5
1.0
0.5
0
17413
Tie point temperature
Ambient temperature
0
25
50
75
100
125
150
T
amb
- Ambient Temperature (°C)
Figure 3. Power Dissipation vs. Ambient Temperature
www.vishay.com
4
For technical support, please contact:
DiodesSSP@vishay.com
Document Number 85810
Rev. 2.0, 23-Mar-10
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Package Dimensions
in millimeters (inches):
DO219-AB (SMF)
0.85 (0.033)
0.35 (0.014)
0.25 (0.010)
0.05 (0.002)
0.1 (0.004)
5
1.9 (0.075)
1.7 (0.067)
1.2 (0.047)
0.8 (0.031)
0 (0.000)
Detail Z
enlarged
1.08 (0.043)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
0.88 (0.035)
Foot print recommendation:
1.3 (0.051)
1.3 (0.051)
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
17247
1.4 (0.055)
2.9 (0.114)
Document Number 85810
Rev. 2.0, 23-Mar-10
5
For technical support, please contact:
DiodesSSP@vishay.com
www.vishay.com
5
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