Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With
TO-220C package
·High
breakdown voltage
: V
CBO
=500V(Min)
·Wide
area of safe operation
·Fast
switching speed
APPLICATIONS
·400V/4A
switching regulator applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC3038
·
Absolute maximum ratings(Ta=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-pulse
Base current
PW≤300μs,Duty cycle≤10%
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
4
8
1.5
1.75
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
40
150
-55~150
℃
℃
W
UNIT
V
V
V
A
A
A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=5mA ; R
BE
=∞
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
C
=0
I
C
=2A; I
B
=0.4A
I
C
=2A; I
B
=0.4A
V
CB
=400V ;I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.4A ; V
CE
=5V
I
C
=2A ; V
CE
=5V
I
C
=0.4A ; V
CE
=10V
f=1MHz ; V
CB
=10V
15
8
20
40
MIN
400
500
7
2SC3038
TYP.
MAX
UNIT
V
V
V
1.0
1.5
10
10
50
V
V
μA
μA
MHz
pF
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
V
CC
=200V; I
C
=3A
I
B1
=0.6A;I
B2
=-0.6A;
R
L
=66.6Ω
1.0
2.5
1.0
μs
μs
μs
h
FE-1
Classifications
L
15-30
M
20-40
N
30-50
2
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