INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
2SD2385
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 140V(Min)
·High
DC Current Gain-
: h
FE
= 5000(Min)@I
C
= 7A
·Complement
to Type 2SB1556
APPLICATIONS
·Designed
for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
w
w
em
cs
.is
w
140
V
140
V
5
V
8
A
0.1
A
100
W
VALUE
UNIT
om
i.c
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
P
C
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SD2385
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 50mA ; I
B
= 0
140
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 7A; I
B
= 7mA
B
2.5
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 7A ; V
CE
= 5V
3.0
V
I
CBO
Collector Cutoff Current
V
CB
= 140V ; I
E
=0
5
μA
I
EBO
Emitter Cutoff Current
V
EB
= 5V; I
C
=0
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
C
OB
Output Capacitance
f
T
Current-Gain—Bandwidth Product
h
FE-1
Classifications
A
5000-12000
w
w
B
em
cs
.is
w
I
C
= 12A ; V
CE
= 5V
I
C
= 1A ; V
CE
= 5V
I
C
= 7A ; V
CE
= 5V
I
E
=0 ; V
CB
= 10V;f
test
= 1.0MHz
om
i.c
5000
2000
30
5
μA
30000
110
pF
MHz
C
15000-30000
9000-18000
isc Website：www.iscsemi.cn
2
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