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2SD1254R

产品描述Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, N-G1, 3 PIN
产品类别分立半导体    晶体管   
文件大小91KB,共4页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
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2SD1254R概述

Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, N-G1, 3 PIN

2SD1254R规格参数

参数名称属性值
包装说明SMALL OUTLINE, R-PSSO-G2
针数3
Reach Compliance Codeunknow
ECCN代码EAR99
最大集电极电流 (IC)3 A
集电极-发射极最大电压80 V
配置SINGLE
最小直流电流增益 (hFE)60
JESD-30 代码R-PSSO-G2
元件数量1
端子数量2
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
最大功率耗散 (Abs)1.3 W
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置SINGLE
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)30 MHz
Base Number Matches1

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Power Transistors
2SD1254
Silicon NPN epitaxial planar type
Unit: mm
For power switching
Complementary to 2SB0931
10.0
±0.3
1.5
±0.1
8.5
±0.2
6.0
±0.2
3.4
±0.3
1.0
±0.1
4.4
±0.5
Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory linearity of forward current transfer ratio h
FE
Large collector current I
C
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
130
80
7
3
6
30
1.3
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
(6.5)
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current(Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
=
10 mA, I
B
=
0
V
CB
=
100
V,I
E
= 0
V
EB
= 5 V,I
C
= 0
V
CE
= 2
V, I
C
= 0.1
A
V
CE
= 2
V, I
C
= 0.5
A
I
C
= 2
A, I
B
= 0.1
A
I
C
= 2
A, I
B
= 0.1
A
V
CE
=
10 V, I
C
= 0.5
A, f
=
10 MHz
I
C
= 0.5
A
I
B1
= 50
mA, I
B2
= −
50 mA
V
CC
=
50 V
30
0.5
2.5
0.15
45
60
260
0.5
1.5
V
V
MHz
µs
µs
µs
Min
80
10
50
Typ
Max
Unit
V
µA
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
R
60 to 120
Q
90 to 180
P
130 to 260
(7.6)
(1.5)
1
2
0.8
±0.1
R = 0.5
R = 0.5
2.54
±0.3
1.0
±0.1
1.4
±0.1
0.4
±0.1
5.08
±0.5
(8.5)
(6.0)
1.3
3
2.0
±0.5
4.4
±0.5
0 to 0.4
14.4
±0.5
3.0
+0.4
–0.2
1.5
+0
–0.4
Publication date: September 2003
SJD00171BED
1

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