Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3465
DESCRIPTION
・With
TO-3 package
・High
voltage
・Fast
switching speed
APPLICATIONS
・For
switching regulator applications
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
固电
导½
半
PARAMETER
ANG
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
1100
800
7
12
UNIT
V
V
V
A
W
℃
℃
T
C
=25℃
160
200
-65~200
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=5mA; R
BE
=∞
I
C
=1mA; I
E
=0;
I
E
=1mA; I
C
=0;
I
C
=6A;I
B
=1.2A
I
C
=6A;I
B
=1.2A
V
CB
=800V;I
E
=0
V
EB
=7V;I
C
=0
I
C
=0.8A ;V
CE
=5V
10
MIN
800
1100
7
TYP.
2SC3465
MAX
UNIT
V
V
V
2.0
1.5
10
10
V
V
μA
μA
固电
DC current gain
导½
半
ANG
CH
IN
Transition freuquency
Collector output capacitance
MIC
E SE
I
C
=4A ;V
CE
=5V
I
C
=0.8A ;V
CE
=10V
OR
CT
NDU
O
40
10
15
240
MHz
pF
I
E
=0 ;V
CB
=10V,f=1MHz
h
FE-1
classifications
K
10-20
L
15-30
M
20-40
2
微控制器 MCU
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