IDT71578L35DBRT概述

Cache SRAM, 8KX8, 35ns

IDT71578L35DBRT规格参数

参数名称	属性值
厂商名称	IDT (Integrated Device Technology)
包装说明	,
Reach Compliance Code	unknown
ECCN代码	3A001.A.2.C
最长访问时间	35 ns
其他特性	BATTERY BACKUP OPERATION
JESD-609代码	e0
内存密度	65536 bit
内存集成电路类型	CACHE SRAM
内存宽度	8
功能数量	1
字数	8192 words
字数代码	8000
工作模式	ASYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-55 °C
组织	8KX8
并行/串行	PARALLEL
认证状态	Not Qualified
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
技术	CMOS
温度等级	MILITARY
端子面层	TIN LEAD

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IDT71578L35DBRT相似产品对比

	IDT71578L35DBRT	IDT71578S45DBRT	IDT71578L45DBRT	IDT71578S25DRT	IDT71578L25DBRT	IDT71578L20DRT	IDT71578S35DRT	IDT71578S20DRT	IDT71578L25DRT	IDT71578S25DBRT
描述	Cache SRAM, 8KX8, 35ns	Cache SRAM, 8KX8, 45ns	Cache SRAM, 8KX8, 45ns	Cache SRAM, 8KX8, 25ns	Cache SRAM, 8KX8, 25ns	Cache SRAM, 8KX8, 20ns	Cache SRAM, 8KX8, 35ns	Cache SRAM, 8KX8, 20ns	Cache SRAM, 8KX8, 25ns	Cache SRAM, 8KX8, 25ns
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	EAR99	3A001.A.2.C	EAR99	EAR99	EAR99	EAR99	3A001.A.2.C
最长访问时间	35 ns	45 ns	45 ns	25 ns	25 ns	20 ns	35 ns	20 ns	25 ns	25 ns
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
内存密度	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit
内存集成电路类型	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
内存宽度	8	8	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1	1	1
字数	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words
字数代码	8000	8000	8000	8000	8000	8000	8000	8000	8000	8000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
组织	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
端子面层	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)

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